JP5536901B2 - 半導体ダイの反りを制御する装置及び方法 - Google Patents
半導体ダイの反りを制御する装置及び方法 Download PDFInfo
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- JP5536901B2 JP5536901B2 JP2012544923A JP2012544923A JP5536901B2 JP 5536901 B2 JP5536901 B2 JP 5536901B2 JP 2012544923 A JP2012544923 A JP 2012544923A JP 2012544923 A JP2012544923 A JP 2012544923A JP 5536901 B2 JP5536901 B2 JP 5536901B2
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000000034 method Methods 0.000 title description 12
- 239000000758 substrate Substances 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 15
- 238000004891 communication Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000013461 design Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000930 thermomechanical effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L23/562—Protection against mechanical damage
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
- H01L23/3128—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
42 応力緩和ビア
44 応力緩和ビア
50 ダイ
55 ビア
120 リモートユニット
125A IC素子
125B IC素子
125C IC素子
130 リモートユニット
140 ベースステーション
150 リモートユニット
180 フォワードリンク信号
190 リバースリンク信号
200 デザインワークステーション
201 ハードディスク
203 駆動装置
204 記憶媒体
210 レイアウト
310 パッケージ基板
320 ダイ
330 相互接続
Claims (10)
- ダイの4つの角部の各々に複数の貫通基板ビアを備える半導体ダイであって、
前記ダイの4つの角部の各々が、円弧状に配置された外側の組の貫通基板ビアであって、前記円弧の頂点が、前記円弧が位置する前記角部の一点に位置合わせされ、外側の列の貫通基板ビアが、前記半導体ダイの側端に平行な方向において前記外側の列の貫通基板ビアが延長する方向に沿って前記円弧の端部の各々から外側に延長する、外側の組の貫通基板ビアを備え、
前記貫通基板ビアが、前記半導体ダイの反りを低減する、半導体ダイ。 - 前記貫通基板ビアが、信号を伝達しない貫通基板ビアであり、
前記ダイの前記4つの角部の各々が、内側の円弧を形成するように配置された内側の組の貫通基板ビアであって、前記内側の円弧の頂点が、前記内側の円弧が位置する前記角部の前記一点に位置合わせされ、内側の列の貫通基板ビアが、前記半導体ダイの前記側端に平行な方向において前記外側の列の貫通基板ビアが延長する方向に沿って前記内側の円弧の端部の各々から外側に延長する、内側の組の貫通基板ビアをさらに含む、請求項1に記載の半導体ダイ。 - 前記半導体ダイの機能ブロックに近接した中心領域に位置する、信号を伝達しない少なくとも1つの追加的な貫通基板ビアをさらに備える、請求項2に記載の半導体ダイ。
- 前記貫通基板ビアが、応力緩和ビアを含む、請求項2に記載の半導体ダイ。
- 前記内側及び外側の組の貫通基板ビアの円弧によって形成される領域において除去されるダイの材料が、前記内側及び外側の列の貫通基板ビアが延長する方向に沿った等しい大きさのダイ領域において除去されるダイの材料より多い、請求項2に記載の半導体ダイ。
- 前記ダイの角部から延長する前記内側及び外側の列の貫通基板ビアが、前記内側及び外側の列の方向に垂直に延長する前記ダイの側部から同一の距離で終わる、請求項2に記載の半導体ダイ。
- 携帯機器、ポータブルコンピュータ、携帯電話、固定位置リモートユニット、移動可能電話、携帯型データユニット、ノート型パーソナルコミュニケーションシステムユニット、携帯情報端末、メーターリーディング装置、固定位置データユニット及び/又はパーソナルコンピュータに組み込まれる、請求項1に記載の半導体ダイ。
- 積層集積回路に組み込まれる、請求項1に記載の半導体ダイ。
- 半導体ダイの熱膨張係数(CTE)を増加する手段を備える半導体ダイであって、
前記熱膨張係数(CTE)を増加する手段が、前記半導体ダイの4つの角部の各々に複数の貫通基板ビアを備え、
前記半導体ダイの前記4つの角部の各々が、
円弧状に配置された外側の組の貫通基板ビアであって、前記円弧の頂点が、前記円弧が位置する前記角部の一点に位置合わせされ、外側の列の貫通基板ビアが、前記半導体ダイの側端に平行な方向において前記外側の列の貫通基板ビアが延長する方向に沿って前記円弧の端部の各々から外側に延長し、前記熱膨張係数(CTE)を増加する手段が、前記半導体ダイの反りを低減する、外側の組の貫通基板ビアと、
前記半導体ダイの機能ブロックに近接した中心領域に位置する、信号を伝達しない少なくとも1つの追加的な貫通基板ビアと、
を含む半導体ダイ。 - 携帯機器、ポータブルコンピュータ、携帯電話、固定位置リモートユニット、移動可能電話、携帯型データユニット、ノート型パーソナルコミュニケーションシステムユニット、携帯情報端末、メーターリーディング装置、固定位置データユニット及び/又はパーソナルコンピュータに組み込まれる、請求項9に記載の半導体ダイ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/640,111 | 2009-12-17 | ||
US12/640,111 US8710629B2 (en) | 2009-12-17 | 2009-12-17 | Apparatus and method for controlling semiconductor die warpage |
PCT/US2010/061143 WO2011084706A2 (en) | 2009-12-17 | 2010-12-17 | Apparatus and method for controlling semiconductor die warpage |
Publications (3)
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JP2013526001A JP2013526001A (ja) | 2013-06-20 |
JP2013526001A5 JP2013526001A5 (ja) | 2014-04-10 |
JP5536901B2 true JP5536901B2 (ja) | 2014-07-02 |
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JP2012544923A Expired - Fee Related JP5536901B2 (ja) | 2009-12-17 | 2010-12-17 | 半導体ダイの反りを制御する装置及び方法 |
Country Status (7)
Country | Link |
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US (1) | US8710629B2 (ja) |
EP (1) | EP2513967A2 (ja) |
JP (1) | JP5536901B2 (ja) |
KR (1) | KR20120101136A (ja) |
CN (1) | CN103038877A (ja) |
TW (1) | TW201131717A (ja) |
WO (1) | WO2011084706A2 (ja) |
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2009
- 2009-12-17 US US12/640,111 patent/US8710629B2/en active Active
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2010
- 2010-12-17 EP EP10799213A patent/EP2513967A2/en not_active Withdrawn
- 2010-12-17 JP JP2012544923A patent/JP5536901B2/ja not_active Expired - Fee Related
- 2010-12-17 WO PCT/US2010/061143 patent/WO2011084706A2/en active Application Filing
- 2010-12-17 KR KR1020127018759A patent/KR20120101136A/ko active IP Right Grant
- 2010-12-17 TW TW099144602A patent/TW201131717A/zh unknown
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Publication number | Publication date |
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WO2011084706A2 (en) | 2011-07-14 |
US8710629B2 (en) | 2014-04-29 |
CN103038877A (zh) | 2013-04-10 |
TW201131717A (en) | 2011-09-16 |
JP2013526001A (ja) | 2013-06-20 |
WO2011084706A3 (en) | 2013-03-28 |
EP2513967A2 (en) | 2012-10-24 |
KR20120101136A (ko) | 2012-09-12 |
US20110147895A1 (en) | 2011-06-23 |
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