JP5605958B2 - 薄い半導体のためのパネル化裏面処理を用いた半導体製造方法及び半導体デバイス - Google Patents
薄い半導体のためのパネル化裏面処理を用いた半導体製造方法及び半導体デバイス Download PDFInfo
- Publication number
- JP5605958B2 JP5605958B2 JP2012510021A JP2012510021A JP5605958B2 JP 5605958 B2 JP5605958 B2 JP 5605958B2 JP 2012510021 A JP2012510021 A JP 2012510021A JP 2012510021 A JP2012510021 A JP 2012510021A JP 5605958 B2 JP5605958 B2 JP 5605958B2
- Authority
- JP
- Japan
- Prior art keywords
- die
- substrate
- layer
- mold compound
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/11001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
- H01L2224/11002—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for supporting the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/1405—Shape
- H01L2224/14051—Bump connectors having different shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
- H01L2224/1418—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/14181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73259—Bump and HDI connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92222—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92224—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a build-up interconnect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06513—Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06517—Bump or bump-like direct electrical connections from device to substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06555—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
- H01L2225/06568—Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking the devices decreasing in size, e.g. pyramidical stack
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06572—Auxiliary carrier between devices, the carrier having an electrical connection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18161—Exposing the passive side of the semiconductor or solid-state body of a flip chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Description
120 リモートユニット
130 リモートユニット
150 リモートユニット
140 基地局
125A ICデバイス
125B ICデバイス
125C ICデバイス
180 順方向リンク信号
190 逆方向リンク信号
200 設計ワークステーション
201 ハードディスク
203 ドライブ装置
204 記憶媒体
210 回路/回路設計
212 半導体部品
910 ウエハ
911 パッケージング接続部
912 シリコン貫通ビア
915 ウエハ
921 第1の層ダイ
922 第1の層ダイ
926 基板パネル
927 インターコネクト
931 モールド化合物
941 分離層
946 金属接続部
951 マイクロバンプ
952 第2の層ダイ
953 第2の層ダイ
961 モールド化合物
Claims (15)
- 半導体製造方法であって、
第1のダイを形成したウエハを裏面研削するステップと、
前記第1のダイを基板パネルに取り付ける前に、ウエハを前記第1のダイにダイシングするステップと、
前記第1のダイを前記基板パネルに取り付けるステップと、
前記第1のダイを前記基板パネルに取り付けた後に、前記第1のダイおよび前記基板パネルにモールド化合物を適用するステップと、
前記モールド化合物を適用した後に、前記第1のダイおよび前記モールド化合物を薄くするステップと
を含む方法。 - 前記第1のダイを薄くするステップが、少なくとも1つのシリコン貫通ビアを露出させる、請求項1に記載の方法。
- 薄くするステップの後に、
分離層を前記第1のダイに堆積させるステップと、
パッケージング接続部を前記第1のダイに堆積させるステップと
をさらに含む請求項2に記載の方法。 - 前記パッケージング接続部を、前記第1のダイの前記少なくとも1つのシリコン貫通ビアに結合するステップをさらに含む請求項3に記載の方法。
- 第2のダイを前記パッケージング接続部に取り付けるステップをさらに含む請求項4に記載の方法。
- 前記第2のダイに第2のモールド化合物を適用するステップをさらに含む請求項5に記載の方法。
- 前記第1のダイを、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、通信デバイス、携帯情報端末(PDA)、固定位置データユニット、およびコンピュータからなる群から選択されるデバイスの中に組み込むステップをさらに含む請求項1に記載の方法。
- 前記モールド化合物を適用するステップが、エポキシベースのモールドを適用するステップを含む、請求項1に記載の方法。
- 前記モールド化合物を適用するステップが、モールドチェースをモールド化合物で満たすステップと、前記モールドチェースを前記第1のダイに適用するステップとを含む、請求項1に記載の方法。
- 半導体製造方法であって、
ウエハを裏面研削するステップと、
前記ウエハを第1のダイにダイシングするステップと、
前記第1のダイを基板パネルに取り付けるステップと、
前記第1のダイおよび前記基板パネルに第1のモールド化合物を適用するステップと、
前記第1のダイおよび前記第1のモールド化合物を裏面研削するステップと、
分離層を前記第1のダイに堆積させるステップと、
前記分離層に第1のダイのシリコン貫通ビアに結合するパッケージング接続部を形成するステップと、
第2のダイを前記パッケージング接続部に取り付けて前記第2のダイを前記第1のダイに取り付けるステップと、
前記第1のダイおよび前記第2のダイに第2のモールド化合物を適用するステップと
を含む方法。 - 基板と、
シリコン貫通ビアと、第1の表面と、第1の表面の反対側の第2の表面とを有し、第1の表面が前記基板によって支持される、第1のダイと、
前記基板と前記第1のダイとの間の通信を容易にするためにシリコン貫通ビアに結合された、前記基板と前記第1のダイとの間のパッケージング接続部と、
前記第1のダイを部分的に取り囲み、第1のモールド化合物の側壁が前記基板の側壁と同一平面上にある、前記基板と前記第1のダイとの間の第1のモールド化合物と、
前記第1のダイに結合された第2のダイと、
前記第2のダイを部分的に取り囲み、第2のモールド化合物の側壁が前記第1のモールド化合物の側壁および分離層の側壁と同一平面上にあり、第2のモールド化合物の表面が前記分離層の第2の表面と隣接する、第2のモールド化合物と、
前記第1のダイと前記第2のダイとの間に配置されるとともに、第1のモールド化合物によって部分的に支持され、実質的に前記基板の長さに延在する分離層と、
を含む半導体デバイス。 - 前記第1のモールド化合物と同一平面上のバックエンドオブライン層をさらに含む請求項11に記載の半導体デバイス。
- 基板と、
シリコン貫通ビアと、第1の表面と、第1の表面の反対側の第2の表面とを有し、第1の表面が前記基板によって支持されるダイと、
前記基板と前記ダイとの間の通信を容易にするためにシリコン貫通ビアに結合された、前記基板と前記ダイとの間のパッケージング接続部と、
前記基板と前記ダイとの間にあり、前記ダイを部分的に取り囲み、封入手段の側壁が前記基板の側壁と同一平面上にある、ダイを封入するための手段と、
前記ダイの上に配置されるとともに、封入手段によって部分的に支持され、実質的に前記基板の長さに延在する、ダイを電気的に分離する手段と、
を含む半導体デバイス。 - 前記半導体デバイスが、通信デバイス、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、コンピュータ、携帯情報端末(PDA)、および固定位置データユニットの少なくとも1つに組み込まれる請求項13に記載の半導体デバイス。
- 前記半導体デバイスが、通信デバイス、音楽プレーヤ、ビデオプレーヤ、エンターテインメントユニット、ナビゲーションデバイス、コンピュータ、携帯情報端末(PDA)、および固定位置データユニットの少なくとも1つに組み込まれる請求項11に記載の半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/437,168 US8294280B2 (en) | 2009-05-07 | 2009-05-07 | Panelized backside processing for thin semiconductors |
US12/437,168 | 2009-05-07 | ||
PCT/US2010/034096 WO2010129903A1 (en) | 2009-05-07 | 2010-05-07 | Panelized backside processing for thin semiconductors |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012526400A JP2012526400A (ja) | 2012-10-25 |
JP2012526400A5 JP2012526400A5 (ja) | 2013-08-08 |
JP5605958B2 true JP5605958B2 (ja) | 2014-10-15 |
Family
ID=42340979
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012510021A Active JP5605958B2 (ja) | 2009-05-07 | 2010-05-07 | 薄い半導体のためのパネル化裏面処理を用いた半導体製造方法及び半導体デバイス |
Country Status (8)
Country | Link |
---|---|
US (2) | US8294280B2 (ja) |
EP (1) | EP2427909B1 (ja) |
JP (1) | JP5605958B2 (ja) |
KR (1) | KR101309549B1 (ja) |
CN (2) | CN106129000A (ja) |
ES (1) | ES2900265T3 (ja) |
TW (1) | TW201118937A (ja) |
WO (1) | WO2010129903A1 (ja) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8294280B2 (en) | 2009-05-07 | 2012-10-23 | Qualcomm Incorporated | Panelized backside processing for thin semiconductors |
US8541886B2 (en) * | 2010-03-09 | 2013-09-24 | Stats Chippac Ltd. | Integrated circuit packaging system with via and method of manufacture thereof |
US9230894B2 (en) * | 2012-05-02 | 2016-01-05 | Infineon Technologies Ag | Methods for manufacturing a chip package |
US8964888B2 (en) * | 2012-08-29 | 2015-02-24 | Qualcomm Incorporated | System and method of generating a pre-emphasis pulse |
US9257341B2 (en) | 2013-07-02 | 2016-02-09 | Texas Instruments Incorporated | Method and structure of packaging semiconductor devices |
US20150008566A1 (en) * | 2013-07-02 | 2015-01-08 | Texas Instruments Incorporated | Method and structure of panelized packaging of semiconductor devices |
WO2017111836A1 (en) * | 2015-12-26 | 2017-06-29 | Intel IP Corporation | Package stacking using chip to wafer bonding |
DE102016108000B3 (de) * | 2016-04-29 | 2016-12-15 | Danfoss Silicon Power Gmbh | Verfahren zum stoffschlüssigen Verbinden einer ersten Komponente eines Leistungshalbleitermoduls mit einer zweiten Komponente eines Leistungshalbleitermoduls |
US10566267B2 (en) | 2017-10-05 | 2020-02-18 | Texas Instruments Incorporated | Die attach surface copper layer with protective layer for microelectronic devices |
US10879144B2 (en) | 2018-08-14 | 2020-12-29 | Texas Instruments Incorporated | Semiconductor package with multilayer mold |
US10643957B2 (en) | 2018-08-27 | 2020-05-05 | Nxp B.V. | Conformal dummy die |
US11114410B2 (en) | 2019-11-27 | 2021-09-07 | International Business Machines Corporation | Multi-chip package structures formed by joining chips to pre-positioned chip interconnect bridge devices |
US11342246B2 (en) * | 2020-07-21 | 2022-05-24 | Qualcomm Incorporated | Multi-terminal integrated passive devices embedded on die and a method for fabricating the multi-terminal integrated passive devices |
CN111739840B (zh) * | 2020-07-24 | 2023-04-11 | 联合微电子中心有限责任公司 | 一种硅转接板的制备方法及硅转接板的封装结构 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6010392A (en) * | 1998-02-17 | 2000-01-04 | International Business Machines Corporation | Die thinning apparatus |
JP3339838B2 (ja) * | 1999-06-07 | 2002-10-28 | ローム株式会社 | 半導体装置およびその製造方法 |
JP2001144218A (ja) * | 1999-11-17 | 2001-05-25 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
US6444576B1 (en) * | 2000-06-16 | 2002-09-03 | Chartered Semiconductor Manufacturing, Ltd. | Three dimensional IC package module |
JP3530149B2 (ja) * | 2001-05-21 | 2004-05-24 | 新光電気工業株式会社 | 配線基板の製造方法及び半導体装置 |
KR100394808B1 (ko) * | 2001-07-19 | 2003-08-14 | 삼성전자주식회사 | 웨이퍼 레벨 적층 칩 패키지 및 그 제조 방법 |
JP3893268B2 (ja) * | 2001-11-02 | 2007-03-14 | ローム株式会社 | 半導体装置の製造方法 |
US6867501B2 (en) | 2001-11-01 | 2005-03-15 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing same |
US7057269B2 (en) * | 2002-10-08 | 2006-06-06 | Chippac, Inc. | Semiconductor multi-package module having inverted land grid array (LGA) package stacked over ball grid array (BGA) package |
JP4056854B2 (ja) * | 2002-11-05 | 2008-03-05 | 新光電気工業株式会社 | 半導体装置の製造方法 |
JP4441328B2 (ja) * | 2004-05-25 | 2010-03-31 | 株式会社ルネサステクノロジ | 半導体装置及びその製造方法 |
JP5052130B2 (ja) * | 2004-06-04 | 2012-10-17 | カミヤチョウ アイピー ホールディングス | 三次元積層構造を持つ半導体装置及びその製造方法 |
JP4434977B2 (ja) * | 2005-02-02 | 2010-03-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2007180529A (ja) * | 2005-12-02 | 2007-07-12 | Nec Electronics Corp | 半導体装置およびその製造方法 |
US20070126085A1 (en) | 2005-12-02 | 2007-06-07 | Nec Electronics Corporation | Semiconductor device and method of manufacturing the same |
JP2007317822A (ja) * | 2006-05-25 | 2007-12-06 | Sony Corp | 基板処理方法及び半導体装置の製造方法 |
US7901989B2 (en) * | 2006-10-10 | 2011-03-08 | Tessera, Inc. | Reconstituted wafer level stacking |
US8035207B2 (en) * | 2006-12-30 | 2011-10-11 | Stats Chippac Ltd. | Stackable integrated circuit package system with recess |
KR20080068334A (ko) | 2007-01-19 | 2008-07-23 | 오태성 | 주석 비아 또는 솔더 비아와 이의 접속부를 구비한 칩 스택패키지 및 그 제조방법 |
JP2008177504A (ja) * | 2007-01-22 | 2008-07-31 | Toyobo Co Ltd | 半導体パッケージ |
US8367471B2 (en) * | 2007-06-15 | 2013-02-05 | Micron Technology, Inc. | Semiconductor assemblies, stacked semiconductor devices, and methods of manufacturing semiconductor assemblies and stacked semiconductor devices |
SG149726A1 (en) * | 2007-07-24 | 2009-02-27 | Micron Technology Inc | Microelectronic die packages with metal leads, including metal leads for stacked die packages, and associated systems and methods |
US20100109169A1 (en) * | 2008-04-29 | 2010-05-06 | United Test And Assembly Center Ltd | Semiconductor package and method of making the same |
US8294280B2 (en) | 2009-05-07 | 2012-10-23 | Qualcomm Incorporated | Panelized backside processing for thin semiconductors |
-
2009
- 2009-05-07 US US12/437,168 patent/US8294280B2/en active Active
-
2010
- 2010-05-07 WO PCT/US2010/034096 patent/WO2010129903A1/en active Application Filing
- 2010-05-07 JP JP2012510021A patent/JP5605958B2/ja active Active
- 2010-05-07 CN CN201610693974.1A patent/CN106129000A/zh active Pending
- 2010-05-07 EP EP10720068.5A patent/EP2427909B1/en active Active
- 2010-05-07 ES ES10720068T patent/ES2900265T3/es active Active
- 2010-05-07 CN CN201080020194.1A patent/CN102422415B/zh active Active
- 2010-05-07 KR KR1020117029271A patent/KR101309549B1/ko active IP Right Grant
- 2010-05-07 TW TW099114816A patent/TW201118937A/zh unknown
-
2011
- 2011-10-27 US US13/282,712 patent/US9252128B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2010129903A1 (en) | 2010-11-11 |
ES2900265T3 (es) | 2022-03-16 |
KR101309549B1 (ko) | 2013-09-24 |
EP2427909B1 (en) | 2021-11-24 |
CN106129000A (zh) | 2016-11-16 |
JP2012526400A (ja) | 2012-10-25 |
KR20120018787A (ko) | 2012-03-05 |
CN102422415B (zh) | 2016-09-07 |
US8294280B2 (en) | 2012-10-23 |
US20100283160A1 (en) | 2010-11-11 |
TW201118937A (en) | 2011-06-01 |
US20120040497A1 (en) | 2012-02-16 |
CN102422415A (zh) | 2012-04-18 |
EP2427909A1 (en) | 2012-03-14 |
US9252128B2 (en) | 2016-02-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5605958B2 (ja) | 薄い半導体のためのパネル化裏面処理を用いた半導体製造方法及び半導体デバイス | |
TWI751240B (zh) | 晶片封裝結構及其製造方法 | |
US20100314725A1 (en) | Stress Balance Layer on Semiconductor Wafer Backside | |
US9550670B2 (en) | Stress buffer layer for integrated microelectromechanical systems (MEMS) | |
JP5859514B2 (ja) | 積層集積回路のための二面の相互接続されたcmos | |
JP5988939B2 (ja) | 不連続な薄い半導体ウェハ表面のフィーチャ | |
KR20130083478A (ko) | 복수의 수직으로 내장된 다이를 갖는 기판을 가진 멀티 칩 패키지 및 그 형성 프로세스 | |
US9299660B2 (en) | Controlled solder-on-die integrations on packages and methods of assembling same | |
US20110221053A1 (en) | Pre-processing to reduce wafer level warpage | |
US20110012239A1 (en) | Barrier Layer On Polymer Passivation For Integrated Circuit Packaging | |
EP2572372A1 (en) | Process for improving package warpage and connection reliability through use of a backside mold configuration (bsmc) | |
US9741645B2 (en) | Dense interconnect with solder cap (DISC) formation with laser ablation and resulting semiconductor structures and packages |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130308 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130319 |
|
A524 | Written submission of copy of amendment under article 19 pct |
Free format text: JAPANESE INTERMEDIATE CODE: A524 Effective date: 20130618 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140331 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140626 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140804 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140825 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5605958 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |