JP5524194B2 - トレンチ処理およびポリシリコンドーピング領域を持つ裏面コンタクト型太陽電池用の構造 - Google Patents

トレンチ処理およびポリシリコンドーピング領域を持つ裏面コンタクト型太陽電池用の構造 Download PDF

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JP5524194B2
JP5524194B2 JP2011513521A JP2011513521A JP5524194B2 JP 5524194 B2 JP5524194 B2 JP 5524194B2 JP 2011513521 A JP2011513521 A JP 2011513521A JP 2011513521 A JP2011513521 A JP 2011513521A JP 5524194 B2 JP5524194 B2 JP 5524194B2
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doping region
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JP2011523231A5 (enExample
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デ、ケースター、デニス
カズンズ、ピーター、ジョン
スミス、デービッド、ディー
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サンパワー コーポレイション
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JP2011513521A 2008-06-12 2009-04-29 トレンチ処理およびポリシリコンドーピング領域を持つ裏面コンタクト型太陽電池用の構造 Active JP5524194B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US6092108P 2008-06-12 2008-06-12
US61/060,921 2008-06-12
US12/392,923 2009-02-25
US12/392,923 US7851698B2 (en) 2008-06-12 2009-02-25 Trench process and structure for backside contact solar cells with polysilicon doped regions
PCT/US2009/042135 WO2009151809A1 (en) 2008-06-12 2009-04-29 Trench process and structure for backside contact solar cells with polysilicon doped regions

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JP2014080106A Division JP5780565B2 (ja) 2008-06-12 2014-04-09 太陽電池の製造方法

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JP2011523231A JP2011523231A (ja) 2011-08-04
JP2011523231A5 JP2011523231A5 (enExample) 2012-05-17
JP5524194B2 true JP5524194B2 (ja) 2014-06-18

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JP2011513521A Active JP5524194B2 (ja) 2008-06-12 2009-04-29 トレンチ処理およびポリシリコンドーピング領域を持つ裏面コンタクト型太陽電池用の構造
JP2011513520A Active JP5625167B2 (ja) 2008-06-12 2009-04-29 ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチ構造
JP2014080106A Active JP5780565B2 (ja) 2008-06-12 2014-04-09 太陽電池の製造方法
JP2014137839A Active JP5860101B2 (ja) 2008-06-12 2014-07-03 ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造
JP2015246766A Active JP6148319B2 (ja) 2008-06-12 2015-12-17 ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造

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JP2014080106A Active JP5780565B2 (ja) 2008-06-12 2014-04-09 太陽電池の製造方法
JP2014137839A Active JP5860101B2 (ja) 2008-06-12 2014-07-03 ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造
JP2015246766A Active JP6148319B2 (ja) 2008-06-12 2015-12-17 ポリシリコンドープ領域を有するバックコンタクト型太陽電池のトレンチプロセス及び構造

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US (15) US7851698B2 (enExample)
EP (4) EP3065184B1 (enExample)
JP (5) JP5524194B2 (enExample)
KR (2) KR101466753B1 (enExample)
CN (4) CN102057497B (enExample)
AU (2) AU2009257973B2 (enExample)
ES (1) ES2979023T3 (enExample)
MY (2) MY177509A (enExample)
PL (1) PL3065184T3 (enExample)
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JP2014160843A (ja) * 2008-06-12 2014-09-04 Sunpower Corp 太陽電池の製造方法及び太陽電池

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US8614395B1 (en) 2007-11-01 2013-12-24 Sandia Corporation Solar cell with back side contacts
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US12074240B2 (en) * 2008-06-12 2024-08-27 Maxeon Solar Pte. Ltd. Backside contact solar cells with separated polysilicon doped regions
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
KR101539047B1 (ko) * 2008-12-24 2015-07-23 인텔렉츄얼 키스톤 테크놀로지 엘엘씨 광기전력 변환 소자 및 그의 제조방법
US9064999B2 (en) 2009-09-07 2015-06-23 Lg Electronics Inc. Solar cell and method for manufacturing the same
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
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US8603900B2 (en) * 2009-10-27 2013-12-10 Varian Semiconductor Equipment Associates, Inc. Reducing surface recombination and enhancing light trapping in solar cells
US8324015B2 (en) * 2009-12-01 2012-12-04 Sunpower Corporation Solar cell contact formation using laser ablation
WO2011072179A2 (en) 2009-12-09 2011-06-16 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers
JP5845445B2 (ja) * 2010-01-26 2016-01-20 パナソニックＩｐマネジメント株式会社 太陽電池及びその製造方法
US8790957B2 (en) * 2010-03-04 2014-07-29 Sunpower Corporation Method of fabricating a back-contact solar cell and device thereof
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US8211731B2 (en) 2010-06-07 2012-07-03 Sunpower Corporation Ablation of film stacks in solar cell fabrication processes
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US8263899B2 (en) 2010-07-01 2012-09-11 Sunpower Corporation High throughput solar cell ablation system
US8377738B2 (en) * 2010-07-01 2013-02-19 Sunpower Corporation Fabrication of solar cells with counter doping prevention
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