ES2979023T3 - Proceso y estructura de zanja para células solares de contacto trasero con regiones dopadas con polisilicio - Google Patents

Proceso y estructura de zanja para células solares de contacto trasero con regiones dopadas con polisilicio Download PDF

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Publication number
ES2979023T3
ES2979023T3 ES16165135T ES16165135T ES2979023T3 ES 2979023 T3 ES2979023 T3 ES 2979023T3 ES 16165135 T ES16165135 T ES 16165135T ES 16165135 T ES16165135 T ES 16165135T ES 2979023 T3 ES2979023 T3 ES 2979023T3
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type
dielectric layer
type doped
region
trench
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Spanish (es)
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David D Smith
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Maxeon Solar Pte Ltd
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Maxeon Solar Pte Ltd
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    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
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    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
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    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/227—Arrangements for electrodes of back-contact photovoltaic cells for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts
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    • H10F77/707—Surface textures, e.g. pyramid structures of the substrates or of layers on substrates, e.g. textured ITO layer on a glass substrate
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    • H10F77/93—Interconnections
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    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
ES16165135T 2008-06-12 2009-04-29 Proceso y estructura de zanja para células solares de contacto trasero con regiones dopadas con polisilicio Active ES2979023T3 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US6092108P 2008-06-12 2008-06-12
US12/431,684 US7812250B2 (en) 2008-06-12 2009-04-28 Trench process and structure for backside contact solar cells with polysilicon doped regions

Publications (1)

Publication Number Publication Date
ES2979023T3 true ES2979023T3 (es) 2024-09-23

Family

ID=41413646

Family Applications (1)

Application Number Title Priority Date Filing Date
ES16165135T Active ES2979023T3 (es) 2008-06-12 2009-04-29 Proceso y estructura de zanja para células solares de contacto trasero con regiones dopadas con polisilicio

Country Status (10)

Country Link
US (15) US7851698B2 (enExample)
EP (4) EP2297789B1 (enExample)
JP (5) JP5625167B2 (enExample)
KR (2) KR101466753B1 (enExample)
CN (4) CN202307920U (enExample)
AU (2) AU2009257973B2 (enExample)
ES (1) ES2979023T3 (enExample)
MY (2) MY187141A (enExample)
PL (1) PL3065184T3 (enExample)
WO (2) WO2009151808A1 (enExample)

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