JP5487631B2 - 化合物半導体装置及びその製造方法 - Google Patents

化合物半導体装置及びその製造方法 Download PDF

Info

Publication number
JP5487631B2
JP5487631B2 JP2009023953A JP2009023953A JP5487631B2 JP 5487631 B2 JP5487631 B2 JP 5487631B2 JP 2009023953 A JP2009023953 A JP 2009023953A JP 2009023953 A JP2009023953 A JP 2009023953A JP 5487631 B2 JP5487631 B2 JP 5487631B2
Authority
JP
Japan
Prior art keywords
buffer layer
layer
gan
semiconductor device
compound semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009023953A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010182812A (ja
Inventor
俊英 吉川
健治 今西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP2009023953A priority Critical patent/JP5487631B2/ja
Priority to US12/697,391 priority patent/US8294181B2/en
Priority to CN2010101110119A priority patent/CN101794815B/zh
Priority to EP10152567.3A priority patent/EP2216806B1/fr
Publication of JP2010182812A publication Critical patent/JP2010182812A/ja
Priority to US13/591,401 priority patent/US8507329B2/en
Application granted granted Critical
Publication of JP5487631B2 publication Critical patent/JP5487631B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2009023953A 2009-02-04 2009-02-04 化合物半導体装置及びその製造方法 Active JP5487631B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009023953A JP5487631B2 (ja) 2009-02-04 2009-02-04 化合物半導体装置及びその製造方法
US12/697,391 US8294181B2 (en) 2009-02-04 2010-02-01 Compound semiconductor device and method of manufacturing the same
CN2010101110119A CN101794815B (zh) 2009-02-04 2010-02-02 化合物半导体器件及其制造方法
EP10152567.3A EP2216806B1 (fr) 2009-02-04 2010-02-03 Dispositif en semi-conducteur composé et son procédé de fabrication
US13/591,401 US8507329B2 (en) 2009-02-04 2012-08-22 Compound semiconductor device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009023953A JP5487631B2 (ja) 2009-02-04 2009-02-04 化合物半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2010182812A JP2010182812A (ja) 2010-08-19
JP5487631B2 true JP5487631B2 (ja) 2014-05-07

Family

ID=42136333

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009023953A Active JP5487631B2 (ja) 2009-02-04 2009-02-04 化合物半導体装置及びその製造方法

Country Status (4)

Country Link
US (2) US8294181B2 (fr)
EP (1) EP2216806B1 (fr)
JP (1) JP5487631B2 (fr)
CN (1) CN101794815B (fr)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
EP2465141B1 (fr) 2009-08-04 2021-04-07 GaN Systems Inc. Transitors hyperfréquence et de puissance à nitrure de gallium avec topologie à matrice
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
KR20130088743A (ko) * 2010-04-13 2013-08-08 갠 시스템즈 인크. 아일랜드 토폴로지를 이용한 고밀도 질화 갈륨 디바이스
JP2012054471A (ja) * 2010-09-02 2012-03-15 Fujitsu Ltd 半導体装置及びその製造方法、電源装置
JP5672926B2 (ja) * 2010-10-08 2015-02-18 富士通株式会社 化合物半導体装置及びその製造方法
KR101720589B1 (ko) * 2010-10-11 2017-03-30 삼성전자주식회사 이 모드(Ｅ-ｍｏｄｅ) 고 전자 이동도 트랜지스터 및 그 제조방법
JP5781292B2 (ja) * 2010-11-16 2015-09-16 ローム株式会社 窒化物半導体素子および窒化物半導体パッケージ
JP5707903B2 (ja) * 2010-12-02 2015-04-30 富士通株式会社 化合物半導体装置及びその製造方法
JP6018360B2 (ja) * 2010-12-02 2016-11-02 富士通株式会社 化合物半導体装置及びその製造方法
JP5810518B2 (ja) 2010-12-03 2015-11-11 富士通株式会社 化合物半導体装置及びその製造方法
US20120153356A1 (en) * 2010-12-20 2012-06-21 Triquint Semiconductor, Inc. High electron mobility transistor with indium gallium nitride layer
JP5741042B2 (ja) * 2011-02-14 2015-07-01 富士通株式会社 化合物半導体装置及びその製造方法
JP5762049B2 (ja) * 2011-02-28 2015-08-12 ルネサスエレクトロニクス株式会社 半導体装置
JP2012182283A (ja) * 2011-03-01 2012-09-20 Sanken Electric Co Ltd 半導体装置
CN103430294B (zh) * 2011-03-18 2016-11-09 富士通株式会社 化合物半导体装置及其制造方法
JP5803303B2 (ja) * 2011-06-08 2015-11-04 住友電気工業株式会社 半導体装置の製造方法
JP5914999B2 (ja) * 2011-06-08 2016-05-11 住友電気工業株式会社 半導体装置の製造方法
JP2013004750A (ja) * 2011-06-16 2013-01-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
TWI508281B (zh) * 2011-08-01 2015-11-11 Murata Manufacturing Co Field effect transistor
JP6035721B2 (ja) * 2011-09-27 2016-11-30 住友電気工業株式会社 半導体装置の製造方法
JP5790461B2 (ja) * 2011-12-07 2015-10-07 富士通株式会社 化合物半導体装置及びその製造方法
JP2013149732A (ja) * 2012-01-18 2013-08-01 Mitsubishi Electric Corp へテロ接合電界効果型トランジスタおよびその製造方法
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
US9379195B2 (en) 2012-05-23 2016-06-28 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US8680536B2 (en) 2012-05-23 2014-03-25 Hrl Laboratories, Llc Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
US10700201B2 (en) 2012-05-23 2020-06-30 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US9000484B2 (en) 2012-05-23 2015-04-07 Hrl Laboratories, Llc Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask
JP2014072377A (ja) 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014146646A (ja) * 2013-01-28 2014-08-14 Fujitsu Ltd 半導体装置
DE112013006369T5 (de) * 2013-03-08 2015-10-08 Hitachi, Ltd. Nitridhalbleiterdiode
JP6318474B2 (ja) * 2013-06-07 2018-05-09 住友電気工業株式会社 半導体装置の製造方法
JP6241915B2 (ja) * 2013-07-31 2017-12-06 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP2015095605A (ja) * 2013-11-13 2015-05-18 住友電気工業株式会社 半導体装置および半導体基板
US9502435B2 (en) 2015-04-27 2016-11-22 International Business Machines Corporation Hybrid high electron mobility transistor and active matrix structure
FR3043251B1 (fr) * 2015-10-30 2022-11-11 Thales Sa Transistor a effet de champ a rendement et gain optimise
CN105448976A (zh) * 2015-12-25 2016-03-30 深圳市华讯方舟微电子科技有限公司 一种增强型AlGaN/GaN高电子迁移率晶体管及其制造方法
JP2017157589A (ja) 2016-02-29 2017-09-07 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2018121001A (ja) * 2017-01-27 2018-08-02 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US10529802B2 (en) * 2017-09-14 2020-01-07 Gan Systems Inc. Scalable circuit-under-pad device topologies for lateral GaN power transistors

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030201459A1 (en) * 2001-03-29 2003-10-30 Sheppard Scott Thomas Nitride based transistors on semi-insulating silicon carbide substrates
JP2003309071A (ja) 2002-04-15 2003-10-31 Mitsubishi Cable Ind Ltd ＧａＮ系半導体結晶基材
JP4332720B2 (ja) * 2003-11-28 2009-09-16 サンケン電気株式会社 半導体素子形成用板状基体の製造方法
CN100508212C (zh) * 2004-06-24 2009-07-01 日本电气株式会社 半导体器件
JP2006114653A (ja) 2004-10-14 2006-04-27 Hitachi Cable Ltd 半導体エピタキシャルウェハ及び電界効果トランジスタ
JP4514584B2 (ja) * 2004-11-16 2010-07-28 富士通株式会社 化合物半導体装置及びその製造方法
US7902571B2 (en) * 2005-08-04 2011-03-08 Hitachi Cable, Ltd. III-V group compound semiconductor device including a buffer layer having III-V group compound semiconductor crystal
US8853666B2 (en) * 2005-12-28 2014-10-07 Renesas Electronics Corporation Field effect transistor, and multilayered epitaxial film for use in preparation of field effect transistor
CN101009346A (zh) * 2006-01-27 2007-08-01 中国科学院物理研究所 硅衬底上生长的非极性a面氮化物薄膜及其制法和用途
JP4897956B2 (ja) * 2006-12-20 2012-03-14 古河電気工業株式会社 半導体電子デバイス
JP4531071B2 (ja) * 2007-02-20 2010-08-25 富士通株式会社 化合物半導体装置
JP5292716B2 (ja) * 2007-03-30 2013-09-18 富士通株式会社 化合物半導体装置
JP5095253B2 (ja) * 2007-03-30 2012-12-12 富士通株式会社 半導体エピタキシャル基板、化合物半導体装置、およびそれらの製造方法

Also Published As

Publication number Publication date
JP2010182812A (ja) 2010-08-19
US8294181B2 (en) 2012-10-23
CN101794815B (zh) 2013-06-05
EP2216806B1 (fr) 2018-07-04
US8507329B2 (en) 2013-08-13
US20120315743A1 (en) 2012-12-13
EP2216806A2 (fr) 2010-08-11
CN101794815A (zh) 2010-08-04
EP2216806A3 (fr) 2011-06-15
US20110031532A1 (en) 2011-02-10

Similar Documents

Publication Publication Date Title
JP5487631B2 (ja) 化合物半導体装置及びその製造方法
US8963164B2 (en) Compound semiconductor device and method of manufacturing the same
JP5292716B2 (ja) 化合物半導体装置
CN102651393B (zh) 化合物半导体器件及其制造方法
KR100967779B1 (ko) 화합물 반도체 장치 및 그것을 이용한 도허티 증폭기
US7985984B2 (en) III-nitride semiconductor field effect transistor
US9349819B2 (en) Heterojunction semiconductor device and manufacturing method
JP5810518B2 (ja) 化合物半導体装置及びその製造方法
JP5712583B2 (ja) 化合物半導体装置及びその製造方法
JP6035721B2 (ja) 半導体装置の製造方法
JP2009032713A (ja) ＧａＮをチャネル層とする窒化物半導体トランジスタ及びその作製方法
JP5581601B2 (ja) 化合物半導体装置及びその製造方法
JP5504660B2 (ja) 化合物半導体装置及びその製造方法
US8815666B2 (en) Power device and method for manufacturing the same
JP5418482B2 (ja) 化合物半導体積層構造
JP2016086108A (ja) 化合物半導体装置
JP2015119028A (ja) 半導体装置、電界効果トランジスタ、およびダイオード
JP5387686B2 (ja) 窒化物半導体装置および電子装置
JP5730505B2 (ja) 化合物半導体装置
JP5673725B2 (ja) 化合物半導体積層構造
US20230231045A1 (en) Semiconductor device, method for manufacturing semiconductor device, and electronic device
JP2023019923A (ja) 半導体装置、半導体装置の製造方法及び電子装置
CN116741635A (zh) 基于无掩膜再生长低阻延伸层的hemt器件制备方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110513

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130430

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130430

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130624

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130628

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130910

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131210

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20131217

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140128

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140210

R150 Certificate of patent or registration of utility model

Ref document number: 5487631

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150