FR3043251B1 - Transistor a effet de champ a rendement et gain optimise - Google Patents

Transistor a effet de champ a rendement et gain optimise Download PDF

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Publication number
FR3043251B1
FR3043251B1 FR1502296A FR1502296A FR3043251B1 FR 3043251 B1 FR3043251 B1 FR 3043251B1 FR 1502296 A FR1502296 A FR 1502296A FR 1502296 A FR1502296 A FR 1502296A FR 3043251 B1 FR3043251 B1 FR 3043251B1
Authority
FR
France
Prior art keywords
gain
field effect
effect transistor
optimized efficiency
optimized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1502296A
Other languages
English (en)
Other versions
FR3043251A1 (fr
Inventor
Jean Claude Jacquet
Piero Gamarra
Stephane Piotrowicz
Cedric Lacam
Marie Antoinette Poisson
Olivier Patard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Thales SA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Thales SA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1502296A priority Critical patent/FR3043251B1/fr
Priority to US15/769,708 priority patent/US20180308966A1/en
Priority to PCT/EP2016/075971 priority patent/WO2017072249A1/fr
Priority to JP2018522143A priority patent/JP2018536285A/ja
Priority to CN201680077236.2A priority patent/CN108475696A/zh
Priority to EP16790546.2A priority patent/EP3369115A1/fr
Publication of FR3043251A1 publication Critical patent/FR3043251A1/fr
Application granted granted Critical
Publication of FR3043251B1 publication Critical patent/FR3043251B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1502296A 2015-10-30 2015-10-30 Transistor a effet de champ a rendement et gain optimise Active FR3043251B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1502296A FR3043251B1 (fr) 2015-10-30 2015-10-30 Transistor a effet de champ a rendement et gain optimise
US15/769,708 US20180308966A1 (en) 2015-10-30 2016-10-27 Field-effect transistor with optimised performance and gain
PCT/EP2016/075971 WO2017072249A1 (fr) 2015-10-30 2016-10-27 Transistor a effet de champ a rendement et gain optimise
JP2018522143A JP2018536285A (ja) 2015-10-30 2016-10-27 最適化された性能及び利得を有する電界効果トランジスタ
CN201680077236.2A CN108475696A (zh) 2015-10-30 2016-10-27 具有优化性能和增益的场效应晶体管
EP16790546.2A EP3369115A1 (fr) 2015-10-30 2016-10-27 Transistor a effet de champ a rendement et gain optimise

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1502296A FR3043251B1 (fr) 2015-10-30 2015-10-30 Transistor a effet de champ a rendement et gain optimise

Publications (2)

Publication Number Publication Date
FR3043251A1 FR3043251A1 (fr) 2017-05-05
FR3043251B1 true FR3043251B1 (fr) 2022-11-11

Family

ID=56137366

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1502296A Active FR3043251B1 (fr) 2015-10-30 2015-10-30 Transistor a effet de champ a rendement et gain optimise

Country Status (6)

Country Link
US (1) US20180308966A1 (fr)
EP (1) EP3369115A1 (fr)
JP (1) JP2018536285A (fr)
CN (1) CN108475696A (fr)
FR (1) FR3043251B1 (fr)
WO (1) WO2017072249A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109742072B (zh) * 2019-01-04 2019-08-16 苏州汉骅半导体有限公司 集成增强型和耗尽型的hemt及其制造方法
US11101378B2 (en) 2019-04-09 2021-08-24 Raytheon Company Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
FR3098810B1 (fr) * 2019-07-18 2021-10-15 Commissariat Energie Atomique Liaison mécanique pour dispositif MEMS et NEMS de mesure d'une variation de pression et dispositif comprenant une telle liaison mécanique
US11545566B2 (en) * 2019-12-26 2023-01-03 Raytheon Company Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
US11362190B2 (en) 2020-05-22 2022-06-14 Raytheon Company Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6624452B2 (en) * 2000-07-28 2003-09-23 The Regents Of The University Of California Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET
JP2005086102A (ja) * 2003-09-10 2005-03-31 Univ Nagoya 電界効果トランジスタ、及び電界効果トランジスタの作製方法
JP5334149B2 (ja) * 2006-06-02 2013-11-06 独立行政法人産業技術総合研究所 窒化物半導体電界効果トランジスタ
JP5130846B2 (ja) * 2006-10-30 2013-01-30 株式会社デンソー 熱伝導性絶縁材料及びその製造方法
JP5487631B2 (ja) * 2009-02-04 2014-05-07 富士通株式会社 化合物半導体装置及びその製造方法
JP2010238752A (ja) * 2009-03-30 2010-10-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
KR101620987B1 (ko) * 2009-04-08 2016-05-13 이피션트 파워 컨버젼 코퍼레이션 갈륨 나이트라이드 완충층에서의 도펀트 확산 변조
US8742459B2 (en) * 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
JP5624940B2 (ja) * 2011-05-17 2014-11-12 古河電気工業株式会社 半導体素子及びその製造方法
CN102646700B (zh) * 2012-05-07 2015-01-28 中国电子科技集团公司第五十五研究所 复合缓冲层的氮化物高电子迁移率晶体管外延结构
CN102969341A (zh) * 2012-11-09 2013-03-13 中国电子科技集团公司第五十五研究所 组分渐变AlyGa1-yN缓冲层的氮化物高电子迁移率晶体管外延结构
US9553183B2 (en) * 2013-06-19 2017-01-24 Infineon Technologies Austria Ag Gate stack for normally-off compound semiconductor transistor
KR20150085724A (ko) * 2014-01-16 2015-07-24 엘지전자 주식회사 질화물 반도체 소자 및 그 제조 방법
US9960262B2 (en) * 2016-02-25 2018-05-01 Raytheon Company Group III—nitride double-heterojunction field effect transistor

Also Published As

Publication number Publication date
FR3043251A1 (fr) 2017-05-05
JP2018536285A (ja) 2018-12-06
US20180308966A1 (en) 2018-10-25
WO2017072249A1 (fr) 2017-05-04
CN108475696A (zh) 2018-08-31
EP3369115A1 (fr) 2018-09-05

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