JP5466641B2 - オプトエレクトロニクス半導体モジュールおよびその製造方法 - Google Patents

オプトエレクトロニクス半導体モジュールおよびその製造方法 Download PDF

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Publication number
JP5466641B2
JP5466641B2 JP2010521295A JP2010521295A JP5466641B2 JP 5466641 B2 JP5466641 B2 JP 5466641B2 JP 2010521295 A JP2010521295 A JP 2010521295A JP 2010521295 A JP2010521295 A JP 2010521295A JP 5466641 B2 JP5466641 B2 JP 5466641B2
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semiconductor module
optoelectronic semiconductor
module according
chip
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Expired - Fee Related
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JP2010521295A
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Japanese (ja)
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JP2010537411A (ja
JP2010537411A5 (enExample
Inventor
ステファン ケーラー
モーリッツ エンゲル
フランク シンガー
ステファン グローシュ
トーマス ザイラー
マティアス ヴァイス
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
JP2010521295A 2007-08-20 2008-08-11 オプトエレクトロニクス半導体モジュールおよびその製造方法 Expired - Fee Related JP5466641B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007039291.7 2007-08-20
DE102007039291A DE102007039291A1 (de) 2007-08-20 2007-08-20 Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
PCT/DE2008/001327 WO2009024125A1 (de) 2007-08-20 2008-08-11 Optoelektronisches halbleitermodul und verfahren zur herstellung eines solchen

Publications (3)

Publication Number Publication Date
JP2010537411A JP2010537411A (ja) 2010-12-02
JP2010537411A5 JP2010537411A5 (enExample) 2013-07-04
JP5466641B2 true JP5466641B2 (ja) 2014-04-09

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JP2010521295A Expired - Fee Related JP5466641B2 (ja) 2007-08-20 2008-08-11 オプトエレクトロニクス半導体モジュールおよびその製造方法

Country Status (8)

Country Link
US (1) US9564555B2 (enExample)
EP (1) EP2188852B1 (enExample)
JP (1) JP5466641B2 (enExample)
KR (1) KR101501795B1 (enExample)
CN (2) CN102437269B (enExample)
DE (1) DE102007039291A1 (enExample)
TW (1) TWI513029B (enExample)
WO (1) WO2009024125A1 (enExample)

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JP5646981B2 (ja) 2010-12-21 2014-12-24 新光電気工業株式会社 枠付反射防止ガラス及びその製造方法
US20130188970A1 (en) * 2012-01-19 2013-07-25 Kalpendu Shastri Packaging Platform For Opto-Electronic Assemblies Using Silicon-Based Turning Mirrors
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Also Published As

Publication number Publication date
KR20100063072A (ko) 2010-06-10
US9564555B2 (en) 2017-02-07
JP2010537411A (ja) 2010-12-02
CN102437269A (zh) 2012-05-02
KR101501795B1 (ko) 2015-03-11
DE102007039291A1 (de) 2009-02-26
US20100230697A1 (en) 2010-09-16
TW200917532A (en) 2009-04-16
CN101785119B (zh) 2012-02-01
EP2188852B1 (de) 2017-04-26
EP2188852A1 (de) 2010-05-26
TWI513029B (zh) 2015-12-11
CN102437269B (zh) 2015-11-18
CN101785119A (zh) 2010-07-21
WO2009024125A1 (de) 2009-02-26

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