JP2010537411A5 - - Google Patents
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- Publication number
- JP2010537411A5 JP2010537411A5 JP2010521295A JP2010521295A JP2010537411A5 JP 2010537411 A5 JP2010537411 A5 JP 2010537411A5 JP 2010521295 A JP2010521295 A JP 2010521295A JP 2010521295 A JP2010521295 A JP 2010521295A JP 2010537411 A5 JP2010537411 A5 JP 2010537411A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor module
- optoelectronic semiconductor
- module according
- frame portion
- cover plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 37
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims 19
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000013459 approach Methods 0.000 claims 1
- 239000005388 borosilicate glass Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 238000004382 potting Methods 0.000 claims 1
- 238000007789 sealing Methods 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007039291.7 | 2007-08-20 | ||
| DE102007039291A DE102007039291A1 (de) | 2007-08-20 | 2007-08-20 | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
| PCT/DE2008/001327 WO2009024125A1 (de) | 2007-08-20 | 2008-08-11 | Optoelektronisches halbleitermodul und verfahren zur herstellung eines solchen |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010537411A JP2010537411A (ja) | 2010-12-02 |
| JP2010537411A5 true JP2010537411A5 (enExample) | 2013-07-04 |
| JP5466641B2 JP5466641B2 (ja) | 2014-04-09 |
Family
ID=40262987
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010521295A Expired - Fee Related JP5466641B2 (ja) | 2007-08-20 | 2008-08-11 | オプトエレクトロニクス半導体モジュールおよびその製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9564555B2 (enExample) |
| EP (1) | EP2188852B1 (enExample) |
| JP (1) | JP5466641B2 (enExample) |
| KR (1) | KR101501795B1 (enExample) |
| CN (2) | CN102437269B (enExample) |
| DE (1) | DE102007039291A1 (enExample) |
| TW (1) | TWI513029B (enExample) |
| WO (1) | WO2009024125A1 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007039291A1 (de) | 2007-08-20 | 2009-02-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
| DE102009042479A1 (de) | 2009-09-24 | 2011-03-31 | Msg Lithoglas Ag | Verfahren zum Herstellen einer Anordnung mit einem Bauelement auf einem Trägersubstrat und Anordnung sowie Verfahren zum Herstellen eines Halbzeuges und Halbzeug |
| JP5646981B2 (ja) | 2010-12-21 | 2014-12-24 | 新光電気工業株式会社 | 枠付反射防止ガラス及びその製造方法 |
| US20130188970A1 (en) * | 2012-01-19 | 2013-07-25 | Kalpendu Shastri | Packaging Platform For Opto-Electronic Assemblies Using Silicon-Based Turning Mirrors |
| JP5958928B2 (ja) * | 2012-02-15 | 2016-08-02 | セイコーインスツル株式会社 | 光学デバイスの製造方法 |
| DE102012104910B4 (de) * | 2012-06-06 | 2022-12-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronische Vorrichtung und Apparatur mit einer solchen Vorrichtung |
| DE102012109028A1 (de) * | 2012-09-25 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
| DE102013101262A1 (de) * | 2013-02-08 | 2014-08-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer |
| DE102013008478A1 (de) | 2013-05-13 | 2014-11-13 | Jenoptik Optical Systems Gmbh | Verfahren zur Herstellung von in ein Gehäuse hermetisch dicht einlötbaren Fensterelementen und danach hergestellte Freiformfensterelemente |
| CN105409013B (zh) | 2013-07-30 | 2019-02-19 | 奥斯兰姆奥普托半导体有限责任公司 | 光电子装置 |
| DE102013219710A1 (de) * | 2013-09-30 | 2015-04-02 | Osram Opto Semiconductors Gmbh | Leuchtvorrichtung und System |
| JP6294113B2 (ja) * | 2014-03-17 | 2018-03-14 | 新光電気工業株式会社 | キャップ及びその製造方法、半導体装置及びその製造方法 |
| KR102268900B1 (ko) * | 2014-11-19 | 2021-06-23 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| DE102014117983A1 (de) * | 2014-12-05 | 2016-06-09 | Osram Opto Semiconductors Gmbh | Konversionselement, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung von Konversionselementen |
| DE102015103571A1 (de) * | 2015-03-11 | 2016-09-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl an Konversionselementen, Konversionselement und optoelektronisches Bauelement |
| WO2017114692A1 (en) * | 2015-12-28 | 2017-07-06 | Philips Lighting Holding B.V. | Lighting device |
| US10132861B2 (en) * | 2016-09-16 | 2018-11-20 | Qualcomm Incorporated | Visible laser circuit fault isolation |
| DE102017200162A1 (de) * | 2017-01-09 | 2018-07-12 | Robert Bosch Gmbh | Verfahren zum Herstellen eines mikroelektromechanischen Bauteils und Wafer-Anordnung |
| JP6659612B2 (ja) * | 2017-03-31 | 2020-03-04 | Hoya Candeo Optronics株式会社 | 発光装置、光照射モジュール、及び光照射装置 |
| US10054749B1 (en) | 2017-04-12 | 2018-08-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical chip-scale package for use in a high channel density, high data rate data communications system having optical input/output (I/O) ports |
| JP7152670B2 (ja) * | 2019-09-20 | 2022-10-13 | 日亜化学工業株式会社 | 光源装置およびその製造方法 |
| EP3796489B1 (en) | 2019-09-20 | 2022-04-27 | Nichia Corporation | Light source device and method of manufacturing the same |
Family Cites Families (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4039890A (en) * | 1974-08-16 | 1977-08-02 | Monsanto Company | Integrated semiconductor light-emitting display array |
| JPH0736452B2 (ja) | 1985-04-30 | 1995-04-19 | 関西日本電気株式会社 | レンズキヤツプの製造方法 |
| US4874500A (en) * | 1987-07-15 | 1989-10-17 | Sri International | Microelectrochemical sensor and sensor array |
| US4826272A (en) * | 1987-08-27 | 1989-05-02 | American Telephone And Telegraph Company At&T Bell Laboratories | Means for coupling an optical fiber to an opto-electronic device |
| EP0539741B1 (en) * | 1991-09-30 | 2003-01-15 | Canon Kabushiki Kaisha | Anodic bonding process with light irradiation |
| US5272113A (en) * | 1992-11-12 | 1993-12-21 | Xerox Corporation | Method for minimizing stress between semiconductor chips having a coefficient of thermal expansion different from that of a mounting substrate |
| DE19508222C1 (de) * | 1995-03-08 | 1996-06-05 | Siemens Ag | Optoelektronischer Wandler und Herstellverfahren |
| US5529819A (en) * | 1995-04-17 | 1996-06-25 | Inko Industrial Corporation | Pellicle assembly with vent structure |
| US5803579A (en) * | 1996-06-13 | 1998-09-08 | Gentex Corporation | Illuminator assembly incorporating light emitting diodes |
| US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
| WO1998031055A1 (en) | 1997-01-09 | 1998-07-16 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
| US5831277A (en) | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
| EP2169733B1 (de) | 1997-09-29 | 2017-07-19 | OSRAM Opto Semiconductors GmbH | Halbleiterlichtquelle |
| US6383664B2 (en) * | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
| DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
| DE19963550B4 (de) * | 1999-12-22 | 2004-05-06 | Epigap Optoelektronik Gmbh | Bipolare Beleuchtungsquelle aus einem einseitig kontaktierten, selbstbündelnden Halbleiterkörper |
| US20020017652A1 (en) * | 2000-08-08 | 2002-02-14 | Stefan Illek | Semiconductor chip for optoelectronics |
| EP2420872A3 (en) * | 2001-12-14 | 2012-05-02 | QUALCOMM MEMS Technologies, Inc. | Uniform illumination system |
| TW526621B (en) | 2002-02-07 | 2003-04-01 | Vtera Technology Inc | Light emitting diode structure |
| DE10219951A1 (de) | 2002-05-03 | 2003-11-13 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Verfahren zur Verkapselung eines Bauelements auf Basis organischer Halbleiter |
| DE10246283B3 (de) * | 2002-10-02 | 2004-03-25 | Infineon Technologies Ag | Verfahren zur Herstellung von Kanälen und Kavitäten in Halbleitergehäusen und elektronisches Bauteil mit derartigen Kanälen und Kavitäten |
| US20040159900A1 (en) * | 2003-01-27 | 2004-08-19 | 3M Innovative Properties Company | Phosphor based light sources having front illumination |
| TWI243488B (en) * | 2003-02-26 | 2005-11-11 | Osram Opto Semiconductors Gmbh | Electrical contact-area for optoelectronic semiconductor-chip and its production method |
| DE10308866A1 (de) * | 2003-02-28 | 2004-09-09 | Osram Opto Semiconductors Gmbh | Beleuchtungsmodul und Verfahren zu dessen Herstellung |
| JP4024721B2 (ja) | 2003-06-20 | 2007-12-19 | 株式会社小糸製作所 | 車両用灯具及び光源モジュール |
| US6982437B2 (en) * | 2003-09-19 | 2006-01-03 | Agilent Technologies, Inc. | Surface emitting laser package having integrated optical element and alignment post |
| US7520679B2 (en) | 2003-09-19 | 2009-04-21 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Optical device package with turning mirror and alignment post |
| US6900509B2 (en) | 2003-09-19 | 2005-05-31 | Agilent Technologies, Inc. | Optical receiver package |
| JP2005150408A (ja) | 2003-11-17 | 2005-06-09 | Sumitomo Electric Ind Ltd | 発光素子搭載用パッケージおよび光源装置 |
| JP4258367B2 (ja) * | 2003-12-18 | 2009-04-30 | 株式会社日立製作所 | 光部品搭載用パッケージ及びその製造方法 |
| DE102004045947A1 (de) | 2004-06-30 | 2006-01-19 | Osram Opto Semiconductors Gmbh | Leuchtdiodenanordnung |
| JP2006135276A (ja) * | 2004-10-04 | 2006-05-25 | Hitachi Ltd | 半導体発光素子搭載用パッケージ及びその製造方法 |
| KR100649641B1 (ko) * | 2005-05-31 | 2006-11-27 | 삼성전기주식회사 | Led 패키지 |
| JP2007019053A (ja) * | 2005-07-05 | 2007-01-25 | Hitachi Ltd | ウェハ上で実装および封止を行う光モジュール |
| US7847302B2 (en) * | 2005-08-26 | 2010-12-07 | Koninklijke Philips Electronics, N.V. | Blue LED with phosphor layer for producing white light and different phosphor in outer lens for reducing color temperature |
| JP5209177B2 (ja) | 2005-11-14 | 2013-06-12 | 新光電気工業株式会社 | 半導体装置および半導体装置の製造方法 |
| DE102006010729A1 (de) * | 2005-12-09 | 2007-06-14 | Osram Opto Semiconductors Gmbh | Optisches Element, Herstellungsverfahren hierfür und Verbund-Bauteil mit einem optischen Element |
| JP2007180203A (ja) | 2005-12-27 | 2007-07-12 | Shinko Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
| US8395725B2 (en) * | 2006-01-19 | 2013-03-12 | Kabushiki Kaisha Toshiba | Light emitting module, backlight using the same, and liquid crystal display device |
| TWM307194U (en) * | 2006-06-29 | 2007-03-01 | Shr-Fu Huang | Structure of light emitting diode (LED) |
| JP2007173875A (ja) | 2007-03-28 | 2007-07-05 | Kyocera Corp | 発光装置 |
| DE102007039291A1 (de) | 2007-08-20 | 2009-02-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
| CN103477242B (zh) * | 2011-04-15 | 2015-08-12 | 欧司朗光电半导体有限公司 | 光电子装置 |
-
2007
- 2007-08-20 DE DE102007039291A patent/DE102007039291A1/de not_active Withdrawn
-
2008
- 2008-08-06 TW TW097129884A patent/TWI513029B/zh not_active IP Right Cessation
- 2008-08-11 KR KR1020107006175A patent/KR101501795B1/ko not_active Expired - Fee Related
- 2008-08-11 EP EP08827587.0A patent/EP2188852B1/de not_active Not-in-force
- 2008-08-11 CN CN201110400131.5A patent/CN102437269B/zh not_active Expired - Fee Related
- 2008-08-11 CN CN2008801038032A patent/CN101785119B/zh not_active Expired - Fee Related
- 2008-08-11 US US12/673,800 patent/US9564555B2/en not_active Expired - Fee Related
- 2008-08-11 JP JP2010521295A patent/JP5466641B2/ja not_active Expired - Fee Related
- 2008-08-11 WO PCT/DE2008/001327 patent/WO2009024125A1/de not_active Ceased
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