KR101501795B1 - 광전 반도체 모듈 및 그 제조 방법 - Google Patents

광전 반도체 모듈 및 그 제조 방법 Download PDF

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KR101501795B1
KR101501795B1 KR1020107006175A KR20107006175A KR101501795B1 KR 101501795 B1 KR101501795 B1 KR 101501795B1 KR 1020107006175 A KR1020107006175 A KR 1020107006175A KR 20107006175 A KR20107006175 A KR 20107006175A KR 101501795 B1 KR101501795 B1 KR 101501795B1
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cover plate
wafer
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frame portion
semiconductor chip
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KR20100063072A (ko
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스테픈 코흐러
모리츠 엔글
프랜크 싱어
스테판 그로우취
토마스 제일러
매티아스 웨이스
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means

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KR1020107006175A 2007-08-20 2008-08-11 광전 반도체 모듈 및 그 제조 방법 Expired - Fee Related KR101501795B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007039291.7 2007-08-20
DE102007039291A DE102007039291A1 (de) 2007-08-20 2007-08-20 Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen
PCT/DE2008/001327 WO2009024125A1 (de) 2007-08-20 2008-08-11 Optoelektronisches halbleitermodul und verfahren zur herstellung eines solchen

Publications (2)

Publication Number Publication Date
KR20100063072A KR20100063072A (ko) 2010-06-10
KR101501795B1 true KR101501795B1 (ko) 2015-03-11

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Country Link
US (1) US9564555B2 (enExample)
EP (1) EP2188852B1 (enExample)
JP (1) JP5466641B2 (enExample)
KR (1) KR101501795B1 (enExample)
CN (2) CN102437269B (enExample)
DE (1) DE102007039291A1 (enExample)
TW (1) TWI513029B (enExample)
WO (1) WO2009024125A1 (enExample)

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JP5646981B2 (ja) 2010-12-21 2014-12-24 新光電気工業株式会社 枠付反射防止ガラス及びその製造方法
US20130188970A1 (en) * 2012-01-19 2013-07-25 Kalpendu Shastri Packaging Platform For Opto-Electronic Assemblies Using Silicon-Based Turning Mirrors
JP5958928B2 (ja) * 2012-02-15 2016-08-02 セイコーインスツル株式会社 光学デバイスの製造方法
DE102012104910B4 (de) * 2012-06-06 2022-12-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische Vorrichtung und Apparatur mit einer solchen Vorrichtung
DE102012109028A1 (de) * 2012-09-25 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
DE102013101262A1 (de) * 2013-02-08 2014-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches Leuchtmodul, optoelektronische Leuchtvorrichtung und Kfz-Scheinwerfer
DE102013008478A1 (de) 2013-05-13 2014-11-13 Jenoptik Optical Systems Gmbh Verfahren zur Herstellung von in ein Gehäuse hermetisch dicht einlötbaren Fensterelementen und danach hergestellte Freiformfensterelemente
CN105409013B (zh) 2013-07-30 2019-02-19 奥斯兰姆奥普托半导体有限责任公司 光电子装置
DE102013219710A1 (de) * 2013-09-30 2015-04-02 Osram Opto Semiconductors Gmbh Leuchtvorrichtung und System
JP6294113B2 (ja) * 2014-03-17 2018-03-14 新光電気工業株式会社 キャップ及びその製造方法、半導体装置及びその製造方法
KR102268900B1 (ko) * 2014-11-19 2021-06-23 엘지디스플레이 주식회사 유기 발광 표시 장치
DE102014117983A1 (de) * 2014-12-05 2016-06-09 Osram Opto Semiconductors Gmbh Konversionselement, optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung von Konversionselementen
DE102015103571A1 (de) * 2015-03-11 2016-09-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl an Konversionselementen, Konversionselement und optoelektronisches Bauelement
WO2017114692A1 (en) * 2015-12-28 2017-07-06 Philips Lighting Holding B.V. Lighting device
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Also Published As

Publication number Publication date
KR20100063072A (ko) 2010-06-10
US9564555B2 (en) 2017-02-07
JP2010537411A (ja) 2010-12-02
CN102437269A (zh) 2012-05-02
DE102007039291A1 (de) 2009-02-26
US20100230697A1 (en) 2010-09-16
TW200917532A (en) 2009-04-16
JP5466641B2 (ja) 2014-04-09
CN101785119B (zh) 2012-02-01
EP2188852B1 (de) 2017-04-26
EP2188852A1 (de) 2010-05-26
TWI513029B (zh) 2015-12-11
CN102437269B (zh) 2015-11-18
CN101785119A (zh) 2010-07-21
WO2009024125A1 (de) 2009-02-26

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St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000