JP5805301B2 - 光電子装置 - Google Patents
光電子装置 Download PDFInfo
- Publication number
- JP5805301B2 JP5805301B2 JP2014504181A JP2014504181A JP5805301B2 JP 5805301 B2 JP5805301 B2 JP 5805301B2 JP 2014504181 A JP2014504181 A JP 2014504181A JP 2014504181 A JP2014504181 A JP 2014504181A JP 5805301 B2 JP5805301 B2 JP 5805301B2
- Authority
- JP
- Japan
- Prior art keywords
- aperture
- optoelectronic device
- optoelectronic
- main radiation
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005693 optoelectronics Effects 0.000 title claims description 84
- 230000005855 radiation Effects 0.000 claims description 87
- 230000035515 penetration Effects 0.000 claims description 45
- 230000000149 penetrating effect Effects 0.000 claims description 28
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/02—Systems using the reflection of electromagnetic waves other than radio waves
- G01S17/04—Systems determining the presence of a target
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4811—Constructional features, e.g. arrangements of optical elements common to transmitter and receiver
- G01S7/4813—Housing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
- H01L31/173—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Remote Sensing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Radar, Positioning & Navigation (AREA)
- Manufacturing & Machinery (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Optical Radar Systems And Details Thereof (AREA)
- Measurement Of Radiation (AREA)
Description
前記図面中、同一、類似または機能の同じ各要素には同一の符号が付されている。
Claims (17)
- 光電子素子(21)を備えた光電子装置(1)であって、
前記光電子素子(21)は、ビームを受信又は生成するために設けられ、主放射貫通面(210)を有し、
前記光電子素子(21)にアパーチャ(51)が対応付けられており、前記アパーチャ(51)は、前記主放射貫通面を貫通するビームのための放射円錐を定めており、
前記アパーチャ(51)は、前記主放射貫通面から離れるように傾斜している傾斜領域(61)を有する内面(510)を備えており、
前記光電子素子は支持体(3)に固定され、前記支持体(3)にはフレーム(4)が固定されており、
前記フレーム(4)内の凹部が前記アパーチャを形成し、前記アパーチャの内面は、受信すべきビームないしは発生すべきビームを所期のように吸収するように構成され、
前記主放射貫通面と前記傾斜領域は、前記主放射貫通面と前記傾斜領域との間で直接的なビームパスが生じないように相互に配置されていることを特徴とする、光電子装置(1)。 - 前記主放射貫通面から放射されたビームが、前記放射円錐において直線的に、かつ光電子装置内部で向きを変えることなく、前記主放射貫通面から直接的に放射されるか、
または、
受光すべきビームが、前記放射円錐において直線的に、かつ光電子装置内部で向きを変えることなく、前記主放射貫通面に直接的に入射する、請求項1記載の光電子装置。 - 前記アパーチャの内面に入射するビームの少なくとも60%が吸収される、請求項1または2記載の光電子装置。
- 前記傾斜領域は、前記主放射貫通面に対して垂直に延在する方向で前記主放射貫通面から離間している、請求項1から3いずれか1項記載の光電子装置。
- 前記傾斜領域の、前記光電子素子に向いている境界面(53)が領域毎に放射円錐を定めている、請求項4記載の光電子装置。
- 前記傾斜領域の延長線(73)は、前記傾斜領域とは反対側の前記主放射貫通面側において前記主放射貫通面を通過している、請求項4又は5記載の光電子装置。
- 前記アパーチャの内面は、前記傾斜領域の、前記光電子素子に向いている側に、アンダーカット領域(63)を有している、請求項4から6いずれか1項記載の光電子装置。
- 前記傾斜領域と前記アンダーカット領域とを有している前記内面は、垂直方向に対する最大角度で前記アパーチャを貫通するビームの入射点(89)が、前記アンダーカット領域において、垂直方向で、少なくとも前記主放射貫通面と同じように前記アパーチャから十分に離れるように、形成されている、請求項7記載の光電子装置。
- 前記アパーチャの傾斜領域は、前記アパーチャの内面のさらなる領域(515)よりも前記光電素子から遠く離れるように傾斜している、請求項1から8いずれか1項記載の光電子装置。
- 前記フレーム(4)は、受信すべきビーム若しくは発生すべきビームに対して所期の吸収率を備えて形成される、請求項1から9いずれか1項記載の光電子装置。
- 前記光電子装置は、さらなる光電子素子(22)を有しており、前記さらなる光電子素子(22)は、前記光電子素子と共にエミッタ−検出器対を形成している、請求項1から10いずれか1項記載の光電子装置。
- 前記エミッタは、LEDとして構成されており、前記検出器は、ダイオード、フォトトランジスタ又はビーム感応性ICとして構成されている、請求項11記載の光電子装置。
- 前記さらなる光電子素子に対して、さらなる主放射貫通面を貫通するビームのための放射円錐を定める、さらなるアパーチャ(52)が対応付けられており、
前記さらなるアパーチャ(52)は、前記さらなる主放射貫通面から離れるように傾斜しているさらなる傾斜領域(62)を有するさらなる内面(520)を備え、
前記さらなる主放射貫通面と前記さらなる傾斜領域(62)は、前記さらなる主放射貫通面と前記さらなる傾斜領域(62)との間で、直接的なビームパスが何も生じないように、相互に配置されている、請求項11又は12記載の光電子装置。 - 前記傾斜領域は、前記さらなる光電子素子から十分に離れているアパーチャの内面側に形成されている、請求項11から13いずれか1項記載の光電子装置。
- 前記さらなる傾斜領域は、前記光電子素子から十分に離れているさらなるアパーチャのさらなる内面側に形成されている、請求項14記載の光電子装置。
- 前記光電子装置は、近接センサとして構成されている、請求項1から15いずれか1項記載の光電子装置。
- 前記光電子装置は、さらなる光電子素子(22)を有しており、前記さらなる光電子素子(22)は、前記光電子素子と共にエミッタ−検出器対を形成し、
前記さらなる光電子素子に対して、さらなる主放射貫通面を貫通するビームのための放射円錐を定める、さらなるアパーチャ(52)が対応付けられており、
前記さらなるアパーチャ(52)は、前記主放射貫通面から離れるように傾斜しているさらなる傾斜領域(62)を有するさらなる内面(520)を備え、
前記傾斜領域は、前記さらなる光電子素子から十分に離れているアパーチャの内面側に形成されており、
前記さらなる傾斜領域は、前記光電子素子から十分に離れているさらなるアパーチャのさらなる内面側に形成されており、
前記アパーチャの傾斜領域、および、前記さらなるアパーチャのさらなる傾斜領域は、それぞれ、前記アパーチャの内面のさらなる領域(515)ないしは前記さらなるアパーチャのさらなる内面のさらなる領域(525)よりも、前記光電素子ないしは前記さらなる光電素子から強く離れるように傾斜している、請求項1記載の光電子装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP2011/056041 WO2012139662A1 (de) | 2011-04-15 | 2011-04-15 | Optoelektronische vorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014519697A JP2014519697A (ja) | 2014-08-14 |
JP5805301B2 true JP5805301B2 (ja) | 2015-11-04 |
Family
ID=44625840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014504181A Active JP5805301B2 (ja) | 2011-04-15 | 2011-04-15 | 光電子装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9153727B2 (ja) |
JP (1) | JP5805301B2 (ja) |
KR (1) | KR101822693B1 (ja) |
CN (1) | CN103477242B (ja) |
DE (1) | DE112011105155A5 (ja) |
WO (1) | WO2012139662A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007039291A1 (de) * | 2007-08-20 | 2009-02-26 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleitermodul und Verfahren zur Herstellung eines solchen |
WO2012155984A1 (de) | 2011-05-19 | 2012-11-22 | Osram Opto Semiconductors Gmbh | Optoelektronische vorrichtung und verfahren zur herstellung von optoelektronischen vorrichtungen |
DE102011113483B4 (de) * | 2011-09-13 | 2023-10-19 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement |
US9496247B2 (en) * | 2013-08-26 | 2016-11-15 | Optiz, Inc. | Integrated camera module and method of making same |
CN104332524B (zh) | 2014-08-26 | 2018-01-09 | 日月光半导体制造股份有限公司 | 电子装置、光学模块及其制造方法 |
EP3200245B1 (en) * | 2014-09-24 | 2023-06-07 | KYOCERA Corporation | Light-emitting-and-receiving element module and sensor device in which same is used |
CN105789196B (zh) | 2014-12-22 | 2019-10-08 | 日月光半导体制造股份有限公司 | 光学模块及其制造方法 |
JP6767072B2 (ja) | 2015-10-06 | 2020-10-14 | アズビル株式会社 | 距離設定型光電センサ |
WO2017179507A1 (ja) * | 2016-04-14 | 2017-10-19 | 株式会社村田製作所 | 光センサ |
WO2018199132A1 (ja) * | 2017-04-27 | 2018-11-01 | 京セラ株式会社 | 受発光素子モジュールおよびセンサー装置 |
CN108132138A (zh) * | 2017-11-23 | 2018-06-08 | 矽力杰半导体技术(杭州)有限公司 | 光学检测组件 |
WO2023007694A1 (ja) * | 2021-07-30 | 2023-02-02 | 三菱電機株式会社 | 測距装置 |
CN115864976B (zh) * | 2022-12-22 | 2023-08-18 | 广东工业大学 | 一种有级可调光子变压器的控制电路 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3513671C3 (de) * | 1985-04-16 | 1995-03-23 | Sick Optik Elektronik Erwin | Lichttaster |
JPH01163350A (ja) | 1987-03-24 | 1989-06-27 | Fujita Corp | タイル貼工法 |
JPH01163350U (ja) * | 1988-04-30 | 1989-11-14 | ||
IT1283729B1 (it) * | 1996-04-12 | 1998-04-30 | Datologic S P A | Dispositivo elettroottico per rilevare la presenza di un corpo a distanza regolabile con soppressione di sfondo |
JPH1188601A (ja) * | 1997-09-05 | 1999-03-30 | Mitsubishi Electric Corp | イメージセンサ |
EP0942293B1 (fr) * | 1998-02-10 | 2002-05-29 | Optosys SA | Dispositif de mesure de distances ou de l'angle d'incidence d'un faisceau lumineux |
US6127671A (en) | 1998-05-28 | 2000-10-03 | Arichell Technologies, Inc. | Directional object sensor for automatic flow controller |
JP4812153B2 (ja) * | 2000-03-16 | 2011-11-09 | 株式会社キーエンス | 光電スイッチ |
JP2002040136A (ja) * | 2000-07-19 | 2002-02-06 | Denso Corp | 反射測定装置 |
JP3725843B2 (ja) * | 2002-07-05 | 2005-12-14 | ローム株式会社 | 反射型センサ |
JP2006203111A (ja) * | 2005-01-24 | 2006-08-03 | Hosiden Corp | 物体検出センサ |
JP2008051764A (ja) * | 2006-08-28 | 2008-03-06 | Sharp Corp | 測距センサ、及びその測距センサを搭載した電子機器 |
DE102008003564A1 (de) * | 2008-01-09 | 2009-07-16 | Dorma Gmbh + Co. Kg | Näherungssensor, insbesondere für Türanlagen |
DE102008029467A1 (de) * | 2008-06-20 | 2009-12-24 | Osram Opto Semiconductors Gmbh | Halbleiterbauelement, Verwendung eines Halbleiterbauelements als Näherungssensor sowie Verfahren zum Detektieren von Objekten |
JP2010034189A (ja) * | 2008-07-28 | 2010-02-12 | Sharp Corp | 光学式近接センサ及びその製造方法並びに当該光学式近接センサを搭載した電子機器 |
US8779361B2 (en) | 2009-06-30 | 2014-07-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components |
US8742350B2 (en) * | 2010-06-08 | 2014-06-03 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Proximity sensor |
-
2011
- 2011-04-15 DE DE112011105155.7T patent/DE112011105155A5/de active Pending
- 2011-04-15 CN CN201180070154.2A patent/CN103477242B/zh active Active
- 2011-04-15 JP JP2014504181A patent/JP5805301B2/ja active Active
- 2011-04-15 US US14/111,930 patent/US9153727B2/en active Active
- 2011-04-15 WO PCT/EP2011/056041 patent/WO2012139662A1/de active Application Filing
- 2011-04-15 KR KR1020137030178A patent/KR101822693B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
KR20140036182A (ko) | 2014-03-25 |
CN103477242B (zh) | 2015-08-12 |
KR101822693B1 (ko) | 2018-01-26 |
DE112011105155A5 (de) | 2014-01-23 |
US9153727B2 (en) | 2015-10-06 |
JP2014519697A (ja) | 2014-08-14 |
US20140084307A1 (en) | 2014-03-27 |
CN103477242A (zh) | 2013-12-25 |
WO2012139662A1 (de) | 2012-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5805301B2 (ja) | 光電子装置 | |
TWI587491B (zh) | 光電模組 | |
JP6328813B2 (ja) | リフロー可能な光電子モジュール | |
KR102123128B1 (ko) | 광전 모듈들 및 그 제조 방법들 | |
US9671490B2 (en) | Reduced stray radiation optoelectronic device | |
JP3139491U (ja) | 移動感知モジュール | |
JP2013175773A (ja) | 光センサ及び物体の光学的検出方法 | |
TW201515251A (zh) | 包含位於光發射元件及光檢測元件之間之非透明隔離構件之光電模組 | |
US10903387B2 (en) | Optical sensing assembly and method for manufacturing the same, and optical sensing system | |
US20110188025A1 (en) | Light Barrier and Method for Detecting Objects | |
US9519051B2 (en) | Optoelectronic device and apparatus having such a device | |
TWI447357B (zh) | 反射式光編碼器 | |
KR101592417B1 (ko) | 근접 센서 및 그 제조 방법 | |
JP2013201226A (ja) | 発光装置 | |
CN108508428B (zh) | 模块盖中具有一个或多个凹槽的接近传感器封装件 | |
KR101266436B1 (ko) | 3차원 공간인식 센서 모듈 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141125 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150225 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150810 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150901 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5805301 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |