JP5452146B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5452146B2
JP5452146B2 JP2009216244A JP2009216244A JP5452146B2 JP 5452146 B2 JP5452146 B2 JP 5452146B2 JP 2009216244 A JP2009216244 A JP 2009216244A JP 2009216244 A JP2009216244 A JP 2009216244A JP 5452146 B2 JP5452146 B2 JP 5452146B2
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JP
Japan
Prior art keywords
region
concentration
conductivity type
drain
low
Prior art date
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Expired - Fee Related
Application number
JP2009216244A
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English (en)
Japanese (ja)
Other versions
JP2011066245A5 (https=
JP2011066245A (ja
Inventor
伸二郎 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP2009216244A priority Critical patent/JP5452146B2/ja
Priority to TW099128869A priority patent/TWI492381B/zh
Priority to US12/807,853 priority patent/US8084833B2/en
Priority to KR1020100090558A priority patent/KR101702668B1/ko
Priority to CN201010286410.9A priority patent/CN102024851B/zh
Publication of JP2011066245A publication Critical patent/JP2011066245A/ja
Publication of JP2011066245A5 publication Critical patent/JP2011066245A5/ja
Application granted granted Critical
Publication of JP5452146B2 publication Critical patent/JP5452146B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2009216244A 2009-09-17 2009-09-17 半導体装置 Expired - Fee Related JP5452146B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置
TW099128869A TWI492381B (zh) 2009-09-17 2010-08-27 半導體裝置
US12/807,853 US8084833B2 (en) 2009-09-17 2010-09-15 Semiconductor device
KR1020100090558A KR101702668B1 (ko) 2009-09-17 2010-09-15 반도체 장치
CN201010286410.9A CN102024851B (zh) 2009-09-17 2010-09-17 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2011066245A JP2011066245A (ja) 2011-03-31
JP2011066245A5 JP2011066245A5 (https=) 2012-08-30
JP5452146B2 true JP5452146B2 (ja) 2014-03-26

Family

ID=43729648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009216244A Expired - Fee Related JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Country Status (5)

Country Link
US (1) US8084833B2 (https=)
JP (1) JP5452146B2 (https=)
KR (1) KR101702668B1 (https=)
CN (1) CN102024851B (https=)
TW (1) TWI492381B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492866B1 (en) * 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
JP6077291B2 (ja) * 2012-12-10 2017-02-08 エスアイアイ・セミコンダクタ株式会社 不揮発性メモリ回路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241985A (ja) * 1995-03-06 1996-09-17 Nippon Motorola Ltd Ｌｄ−ｍｏｓトランジスタ
JPH1126766A (ja) 1997-06-27 1999-01-29 New Japan Radio Co Ltd Ｍｏｓ型電界効果トランジスタおよびその製造方法
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JP3442009B2 (ja) * 1999-09-24 2003-09-02 松下電器産業株式会社 高耐圧ｍｏｓトランジスタの構造
JP3350014B2 (ja) * 2000-01-31 2002-11-25 松下電器産業株式会社 半導体装置
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
US6730962B2 (en) * 2001-12-07 2004-05-04 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
JP2004281527A (ja) * 2003-03-13 2004-10-07 Toshiba Microelectronics Corp 半導体装置
JP2004342767A (ja) * 2003-05-14 2004-12-02 Sharp Corp 半導体記憶装置及び半導体装置、並びに携帯電子機器
JP4711636B2 (ja) * 2004-03-12 2011-06-29 パナソニック株式会社 半導体装置の製造方法
JP2009038068A (ja) * 2007-07-31 2009-02-19 Nec Electronics Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
KR20110030379A (ko) 2011-03-23
US8084833B2 (en) 2011-12-27
TWI492381B (zh) 2015-07-11
CN102024851B (zh) 2014-09-03
CN102024851A (zh) 2011-04-20
JP2011066245A (ja) 2011-03-31
TW201130133A (en) 2011-09-01
KR101702668B1 (ko) 2017-02-03
US20110062516A1 (en) 2011-03-17

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