KR101702668B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101702668B1
KR101702668B1 KR1020100090558A KR20100090558A KR101702668B1 KR 101702668 B1 KR101702668 B1 KR 101702668B1 KR 1020100090558 A KR1020100090558 A KR 1020100090558A KR 20100090558 A KR20100090558 A KR 20100090558A KR 101702668 B1 KR101702668 B1 KR 101702668B1
Authority
KR
South Korea
Prior art keywords
region
conductivity type
oxide film
offset region
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100090558A
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English (en)
Korean (ko)
Other versions
KR20110030379A (ko
Inventor
신지로 가토
Original Assignee
에스아이아이 세미컨덕터 가부시키가이샤
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Filing date
Publication date
Application filed by 에스아이아이 세미컨덕터 가부시키가이샤 filed Critical 에스아이아이 세미컨덕터 가부시키가이샤
Publication of KR20110030379A publication Critical patent/KR20110030379A/ko
Application granted granted Critical
Publication of KR101702668B1 publication Critical patent/KR101702668B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020100090558A 2009-09-17 2010-09-15 반도체 장치 Expired - Fee Related KR101702668B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2009-216244 2009-09-17
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Publications (2)

Publication Number Publication Date
KR20110030379A KR20110030379A (ko) 2011-03-23
KR101702668B1 true KR101702668B1 (ko) 2017-02-03

Family

ID=43729648

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100090558A Expired - Fee Related KR101702668B1 (ko) 2009-09-17 2010-09-15 반도체 장치

Country Status (5)

Country Link
US (1) US8084833B2 (https=)
JP (1) JP5452146B2 (https=)
KR (1) KR101702668B1 (https=)
CN (1) CN102024851B (https=)
TW (1) TWI492381B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492866B1 (en) * 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
JP6077291B2 (ja) * 2012-12-10 2017-02-08 エスアイアイ・セミコンダクタ株式会社 不揮発性メモリ回路

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030109112A1 (en) 2001-12-07 2003-06-12 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
JP2004281527A (ja) 2003-03-13 2004-10-07 Toshiba Microelectronics Corp 半導体装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241985A (ja) * 1995-03-06 1996-09-17 Nippon Motorola Ltd Ｌｄ−ｍｏｓトランジスタ
JPH1126766A (ja) 1997-06-27 1999-01-29 New Japan Radio Co Ltd Ｍｏｓ型電界効果トランジスタおよびその製造方法
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JP3442009B2 (ja) * 1999-09-24 2003-09-02 松下電器産業株式会社 高耐圧ｍｏｓトランジスタの構造
JP3350014B2 (ja) * 2000-01-31 2002-11-25 松下電器産業株式会社 半導体装置
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
JP2004342767A (ja) * 2003-05-14 2004-12-02 Sharp Corp 半導体記憶装置及び半導体装置、並びに携帯電子機器
JP4711636B2 (ja) * 2004-03-12 2011-06-29 パナソニック株式会社 半導体装置の製造方法
JP2009038068A (ja) * 2007-07-31 2009-02-19 Nec Electronics Corp 半導体装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030109112A1 (en) 2001-12-07 2003-06-12 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
JP2004281527A (ja) 2003-03-13 2004-10-07 Toshiba Microelectronics Corp 半導体装置

Also Published As

Publication number Publication date
JP5452146B2 (ja) 2014-03-26
KR20110030379A (ko) 2011-03-23
US8084833B2 (en) 2011-12-27
TWI492381B (zh) 2015-07-11
CN102024851B (zh) 2014-09-03
CN102024851A (zh) 2011-04-20
JP2011066245A (ja) 2011-03-31
TW201130133A (en) 2011-09-01
US20110062516A1 (en) 2011-03-17

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