CN102024851B - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN102024851B
CN102024851B CN201010286410.9A CN201010286410A CN102024851B CN 102024851 B CN102024851 B CN 102024851B CN 201010286410 A CN201010286410 A CN 201010286410A CN 102024851 B CN102024851 B CN 102024851B
Authority
CN
China
Prior art keywords
region
conductivity type
concentration
low
low concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201010286410.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN102024851A (zh
Inventor
加藤伸二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN102024851A publication Critical patent/CN102024851A/zh
Application granted granted Critical
Publication of CN102024851B publication Critical patent/CN102024851B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN201010286410.9A 2009-09-17 2010-09-17 半导体装置 Expired - Fee Related CN102024851B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-216244 2009-09-17
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Publications (2)

Publication Number Publication Date
CN102024851A CN102024851A (zh) 2011-04-20
CN102024851B true CN102024851B (zh) 2014-09-03

Family

ID=43729648

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010286410.9A Expired - Fee Related CN102024851B (zh) 2009-09-17 2010-09-17 半导体装置

Country Status (5)

Country Link
US (1) US8084833B2 (https=)
JP (1) JP5452146B2 (https=)
KR (1) KR101702668B1 (https=)
CN (1) CN102024851B (https=)
TW (1) TWI492381B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492866B1 (en) * 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
JP6077291B2 (ja) * 2012-12-10 2017-02-08 エスアイアイ・セミコンダクタ株式会社 不揮発性メモリ回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
US6784490B1 (en) * 1999-09-24 2004-08-31 Matsushita Electric Industrial Co., Ltd. High-voltage MOS transistor
CN1667837A (zh) * 2004-03-12 2005-09-14 松下电器产业株式会社 半导体器件及其制造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241985A (ja) * 1995-03-06 1996-09-17 Nippon Motorola Ltd Ｌｄ−ｍｏｓトランジスタ
JPH1126766A (ja) 1997-06-27 1999-01-29 New Japan Radio Co Ltd Ｍｏｓ型電界効果トランジスタおよびその製造方法
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JP3350014B2 (ja) * 2000-01-31 2002-11-25 松下電器産業株式会社 半導体装置
US6730962B2 (en) * 2001-12-07 2004-05-04 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
JP2004281527A (ja) * 2003-03-13 2004-10-07 Toshiba Microelectronics Corp 半導体装置
JP2004342767A (ja) * 2003-05-14 2004-12-02 Sharp Corp 半導体記憶装置及び半導体装置、並びに携帯電子機器
JP2009038068A (ja) * 2007-07-31 2009-02-19 Nec Electronics Corp 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6784490B1 (en) * 1999-09-24 2004-08-31 Matsushita Electric Industrial Co., Ltd. High-voltage MOS transistor
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
CN1667837A (zh) * 2004-03-12 2005-09-14 松下电器产业株式会社 半导体器件及其制造方法

Also Published As

Publication number Publication date
JP5452146B2 (ja) 2014-03-26
KR20110030379A (ko) 2011-03-23
US8084833B2 (en) 2011-12-27
TWI492381B (zh) 2015-07-11
CN102024851A (zh) 2011-04-20
JP2011066245A (ja) 2011-03-31
TW201130133A (en) 2011-09-01
KR101702668B1 (ko) 2017-02-03
US20110062516A1 (en) 2011-03-17

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Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160310

Address after: Chiba County, Japan

Patentee after: DynaFine Semiconductor Co.,Ltd.

Address before: Chiba County, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: ABLIC Inc.

Address before: Chiba County, Japan

Patentee before: DynaFine Semiconductor Co.,Ltd.

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140903

CF01 Termination of patent right due to non-payment of annual fee