TWI492381B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI492381B
TWI492381B TW099128869A TW99128869A TWI492381B TW I492381 B TWI492381 B TW I492381B TW 099128869 A TW099128869 A TW 099128869A TW 99128869 A TW99128869 A TW 99128869A TW I492381 B TWI492381 B TW I492381B
Authority
TW
Taiwan
Prior art keywords
region
lightly doped
drain
offset
conductivity type
Prior art date
Application number
TW099128869A
Other languages
English (en)
Chinese (zh)
Other versions
TW201130133A (en
Inventor
加藤伸二郎
Original Assignee
精工電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 精工電子有限公司 filed Critical 精工電子有限公司
Publication of TW201130133A publication Critical patent/TW201130133A/zh
Application granted granted Critical
Publication of TWI492381B publication Critical patent/TWI492381B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0221—Manufacture or treatment of FETs having insulated gates [IGFET] having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended-drain MOSFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW099128869A 2009-09-17 2010-08-27 半導體裝置 TWI492381B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Publications (2)

Publication Number Publication Date
TW201130133A TW201130133A (en) 2011-09-01
TWI492381B true TWI492381B (zh) 2015-07-11

Family

ID=43729648

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099128869A TWI492381B (zh) 2009-09-17 2010-08-27 半導體裝置

Country Status (5)

Country Link
US (1) US8084833B2 (https=)
JP (1) JP5452146B2 (https=)
KR (1) KR101702668B1 (https=)
CN (1) CN102024851B (https=)
TW (1) TWI492381B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492866B1 (en) * 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
JP6077291B2 (ja) * 2012-12-10 2017-02-08 エスアイアイ・セミコンダクタ株式会社 不揮発性メモリ回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
US20030109112A1 (en) * 2001-12-07 2003-06-12 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
TWI248087B (en) * 2003-05-14 2006-01-21 Sharp Kk Semiconductor memory device, semiconductor device, and portable electronic apparatus

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241985A (ja) * 1995-03-06 1996-09-17 Nippon Motorola Ltd Ｌｄ−ｍｏｓトランジスタ
JPH1126766A (ja) 1997-06-27 1999-01-29 New Japan Radio Co Ltd Ｍｏｓ型電界効果トランジスタおよびその製造方法
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JP3442009B2 (ja) * 1999-09-24 2003-09-02 松下電器産業株式会社 高耐圧ｍｏｓトランジスタの構造
JP3350014B2 (ja) * 2000-01-31 2002-11-25 松下電器産業株式会社 半導体装置
JP2004281527A (ja) * 2003-03-13 2004-10-07 Toshiba Microelectronics Corp 半導体装置
JP4711636B2 (ja) * 2004-03-12 2011-06-29 パナソニック株式会社 半導体装置の製造方法
JP2009038068A (ja) * 2007-07-31 2009-02-19 Nec Electronics Corp 半導体装置およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
US20030109112A1 (en) * 2001-12-07 2003-06-12 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
TWI248087B (en) * 2003-05-14 2006-01-21 Sharp Kk Semiconductor memory device, semiconductor device, and portable electronic apparatus

Also Published As

Publication number Publication date
JP5452146B2 (ja) 2014-03-26
KR20110030379A (ko) 2011-03-23
US8084833B2 (en) 2011-12-27
CN102024851B (zh) 2014-09-03
CN102024851A (zh) 2011-04-20
JP2011066245A (ja) 2011-03-31
TW201130133A (en) 2011-09-01
KR101702668B1 (ko) 2017-02-03
US20110062516A1 (en) 2011-03-17

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