JP2011066245A5 - - Google Patents

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Publication number
JP2011066245A5
JP2011066245A5 JP2009216244A JP2009216244A JP2011066245A5 JP 2011066245 A5 JP2011066245 A5 JP 2011066245A5 JP 2009216244 A JP2009216244 A JP 2009216244A JP 2009216244 A JP2009216244 A JP 2009216244A JP 2011066245 A5 JP2011066245 A5 JP 2011066245A5
Authority
JP
Japan
Prior art keywords
region
conductivity type
drain
concentration
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009216244A
Other languages
English (en)
Japanese (ja)
Other versions
JP5452146B2 (ja
JP2011066245A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2009216244A external-priority patent/JP5452146B2/ja
Priority to JP2009216244A priority Critical patent/JP5452146B2/ja
Priority to TW099128869A priority patent/TWI492381B/zh
Priority to US12/807,853 priority patent/US8084833B2/en
Priority to KR1020100090558A priority patent/KR101702668B1/ko
Priority to CN201010286410.9A priority patent/CN102024851B/zh
Publication of JP2011066245A publication Critical patent/JP2011066245A/ja
Publication of JP2011066245A5 publication Critical patent/JP2011066245A5/ja
Publication of JP5452146B2 publication Critical patent/JP5452146B2/ja
Application granted granted Critical
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2009216244A 2009-09-17 2009-09-17 半導体装置 Expired - Fee Related JP5452146B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置
TW099128869A TWI492381B (zh) 2009-09-17 2010-08-27 半導體裝置
US12/807,853 US8084833B2 (en) 2009-09-17 2010-09-15 Semiconductor device
KR1020100090558A KR101702668B1 (ko) 2009-09-17 2010-09-15 반도체 장치
CN201010286410.9A CN102024851B (zh) 2009-09-17 2010-09-17 半导体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009216244A JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Publications (3)

Publication Number Publication Date
JP2011066245A JP2011066245A (ja) 2011-03-31
JP2011066245A5 true JP2011066245A5 (https=) 2012-08-30
JP5452146B2 JP5452146B2 (ja) 2014-03-26

Family

ID=43729648

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009216244A Expired - Fee Related JP5452146B2 (ja) 2009-09-17 2009-09-17 半導体装置

Country Status (5)

Country Link
US (1) US8084833B2 (https=)
JP (1) JP5452146B2 (https=)
KR (1) KR101702668B1 (https=)
CN (1) CN102024851B (https=)
TW (1) TWI492381B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8492866B1 (en) * 2012-01-09 2013-07-23 International Business Machines Corporation Isolated Zener diode
JP6077291B2 (ja) * 2012-12-10 2017-02-08 エスアイアイ・セミコンダクタ株式会社 不揮発性メモリ回路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08241985A (ja) * 1995-03-06 1996-09-17 Nippon Motorola Ltd Ｌｄ−ｍｏｓトランジスタ
JPH1126766A (ja) 1997-06-27 1999-01-29 New Japan Radio Co Ltd Ｍｏｓ型電界効果トランジスタおよびその製造方法
JPH11224945A (ja) * 1998-02-05 1999-08-17 Matsushita Electron Corp 半導体装置
JP3442009B2 (ja) * 1999-09-24 2003-09-02 松下電器産業株式会社 高耐圧ｍｏｓトランジスタの構造
JP3350014B2 (ja) * 2000-01-31 2002-11-25 松下電器産業株式会社 半導体装置
US6306700B1 (en) * 2000-08-07 2001-10-23 United Microelectronics Corp. Method for forming high voltage devices compatible with low voltages devices on semiconductor substrate
US6730962B2 (en) * 2001-12-07 2004-05-04 Texas Instruments Incorporated Method of manufacturing and structure of semiconductor device with field oxide structure
JP2004281527A (ja) * 2003-03-13 2004-10-07 Toshiba Microelectronics Corp 半導体装置
JP2004342767A (ja) * 2003-05-14 2004-12-02 Sharp Corp 半導体記憶装置及び半導体装置、並びに携帯電子機器
JP4711636B2 (ja) * 2004-03-12 2011-06-29 パナソニック株式会社 半導体装置の製造方法
JP2009038068A (ja) * 2007-07-31 2009-02-19 Nec Electronics Corp 半導体装置およびその製造方法

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