JP5419694B2 - 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成 - Google Patents

歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成 Download PDF

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JP5419694B2
JP5419694B2 JP2009530503A JP2009530503A JP5419694B2 JP 5419694 B2 JP5419694 B2 JP 5419694B2 JP 2009530503 A JP2009530503 A JP 2009530503A JP 2009530503 A JP2009530503 A JP 2009530503A JP 5419694 B2 JP5419694 B2 JP 5419694B2
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layer
substrate
containing layer
strained
process gas
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JP2010505274A (ja
JP2010505274A5 (https=
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リューシンク，ゲート
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009530503A 2006-09-29 2007-08-28 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成 Expired - Fee Related JP5419694B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/529,353 US8168548B2 (en) 2006-09-29 2006-09-29 UV-assisted dielectric formation for devices with strained germanium-containing layers
US11/529,353 2006-09-29
PCT/US2007/076937 WO2008042528A2 (en) 2006-09-29 2007-08-28 Uv-assisted dielectric formation for devices with strained germanium-containing layers

Related Child Applications (1)

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JP2013116793A Division JP2013232653A (ja) 2006-09-29 2013-06-03 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成

Publications (3)

Publication Number Publication Date
JP2010505274A JP2010505274A (ja) 2010-02-18
JP2010505274A5 JP2010505274A5 (https=) 2010-09-30
JP5419694B2 true JP5419694B2 (ja) 2014-02-19

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JP2009530503A Expired - Fee Related JP5419694B2 (ja) 2006-09-29 2007-08-28 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成
JP2013116793A Pending JP2013232653A (ja) 2006-09-29 2013-06-03 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成

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Country Status (6)

Country Link
US (1) US8168548B2 (https=)
JP (2) JP5419694B2 (https=)
KR (1) KR101307658B1 (https=)
CN (1) CN101523558B (https=)
TW (1) TWI357110B (https=)
WO (1) WO2008042528A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2013232653A (ja) * 2006-09-29 2013-11-14 Tokyo Electron Ltd 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成

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US7910468B1 (en) * 2007-06-04 2011-03-22 Arizona Board of Regents, A Body of the State of Arizona Acting for and on Behalf of Arizona State University Methods and compositions for preparing Ge/Si semiconductor substrates
CN102468303B (zh) * 2010-11-10 2015-05-13 中国科学院微电子研究所 半导体存储单元、器件及其制备方法
KR101872786B1 (ko) * 2012-06-22 2018-06-29 엘지전자 주식회사 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법
US9966280B2 (en) * 2012-10-05 2018-05-08 Tokyo Electron Limited Process gas generation for cleaning of substrates
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
US9607829B2 (en) * 2014-02-11 2017-03-28 Tokyo Electron Limited Method of surface functionalization for high-K deposition
US20150340228A1 (en) * 2014-05-14 2015-11-26 Tokyo Electron Limited Germanium-containing semiconductor device and method of forming
US9384964B1 (en) * 2014-08-01 2016-07-05 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor device
US9484449B2 (en) * 2014-08-25 2016-11-01 GlobalFoundries, Inc. Integrated circuits with diffusion barrier layers and processes for preparing integrated circuits including diffusion barrier layers
US10143993B2 (en) * 2015-08-18 2018-12-04 Lam Research Corporation Radical generator and method for generating ammonia radicals
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
TWI753297B (zh) * 2018-09-03 2022-01-21 美商應用材料股份有限公司 形成含矽層的方法
TW202129061A (zh) * 2019-10-02 2021-08-01 美商應用材料股份有限公司 環繞式閘極輸入/輸出工程

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Publication number Priority date Publication date Assignee Title
JP2013232653A (ja) * 2006-09-29 2013-11-14 Tokyo Electron Ltd 歪みゲルマニウム含有層を有するデバイスのためのｕｖ支援による誘電層形成

Also Published As

Publication number Publication date
JP2013232653A (ja) 2013-11-14
JP2010505274A (ja) 2010-02-18
WO2008042528A2 (en) 2008-04-10
WO2008042528A3 (en) 2008-07-10
CN101523558A (zh) 2009-09-02
KR20090077802A (ko) 2009-07-15
US20080078987A1 (en) 2008-04-03
CN101523558B (zh) 2012-01-11
TWI357110B (en) 2012-01-21
KR101307658B1 (ko) 2013-09-12
TW200816315A (en) 2008-04-01
US8168548B2 (en) 2012-05-01

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