CN101523558B - 用于具有应变含锗层的器件的uv辅助电介质形成 - Google Patents

用于具有应变含锗层的器件的uv辅助电介质形成 Download PDF

Info

Publication number
CN101523558B
CN101523558B CN2007800364311A CN200780036431A CN101523558B CN 101523558 B CN101523558 B CN 101523558B CN 2007800364311 A CN2007800364311 A CN 2007800364311A CN 200780036431 A CN200780036431 A CN 200780036431A CN 101523558 B CN101523558 B CN 101523558B
Authority
CN
China
Prior art keywords
layer
substrate
dielectric layer
strain
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800364311A
Other languages
English (en)
Chinese (zh)
Other versions
CN101523558A (zh
Inventor
格特·莱乌辛克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN101523558A publication Critical patent/CN101523558A/zh
Application granted granted Critical
Publication of CN101523558B publication Critical patent/CN101523558B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6316—Formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
CN2007800364311A 2006-09-29 2007-08-28 用于具有应变含锗层的器件的uv辅助电介质形成 Expired - Fee Related CN101523558B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/529,353 US8168548B2 (en) 2006-09-29 2006-09-29 UV-assisted dielectric formation for devices with strained germanium-containing layers
US11/529,353 2006-09-29
PCT/US2007/076937 WO2008042528A2 (en) 2006-09-29 2007-08-28 Uv-assisted dielectric formation for devices with strained germanium-containing layers

Publications (2)

Publication Number Publication Date
CN101523558A CN101523558A (zh) 2009-09-02
CN101523558B true CN101523558B (zh) 2012-01-11

Family

ID=39260244

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800364311A Expired - Fee Related CN101523558B (zh) 2006-09-29 2007-08-28 用于具有应变含锗层的器件的uv辅助电介质形成

Country Status (6)

Country Link
US (1) US8168548B2 (https=)
JP (2) JP5419694B2 (https=)
KR (1) KR101307658B1 (https=)
CN (1) CN101523558B (https=)
TW (1) TWI357110B (https=)
WO (1) WO2008042528A2 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8168548B2 (en) * 2006-09-29 2012-05-01 Tokyo Electron Limited UV-assisted dielectric formation for devices with strained germanium-containing layers
US7910468B1 (en) * 2007-06-04 2011-03-22 Arizona Board of Regents, A Body of the State of Arizona Acting for and on Behalf of Arizona State University Methods and compositions for preparing Ge/Si semiconductor substrates
CN102468303B (zh) * 2010-11-10 2015-05-13 中国科学院微电子研究所 半导体存储单元、器件及其制备方法
KR101872786B1 (ko) * 2012-06-22 2018-06-29 엘지전자 주식회사 태양 전지의 불순물층 형성 방법 및 태양 전지의 제조 방법
US9966280B2 (en) * 2012-10-05 2018-05-08 Tokyo Electron Limited Process gas generation for cleaning of substrates
US10249509B2 (en) 2012-11-09 2019-04-02 Tokyo Electron Limited Substrate cleaning method and system using atmospheric pressure atomic oxygen
US9607829B2 (en) * 2014-02-11 2017-03-28 Tokyo Electron Limited Method of surface functionalization for high-K deposition
US20150340228A1 (en) * 2014-05-14 2015-11-26 Tokyo Electron Limited Germanium-containing semiconductor device and method of forming
US9384964B1 (en) * 2014-08-01 2016-07-05 Samsung Electronics Co., Ltd. Method of manufacturing semiconductor device
US9484449B2 (en) * 2014-08-25 2016-11-01 GlobalFoundries, Inc. Integrated circuits with diffusion barrier layers and processes for preparing integrated circuits including diffusion barrier layers
US10143993B2 (en) * 2015-08-18 2018-12-04 Lam Research Corporation Radical generator and method for generating ammonia radicals
US10121655B2 (en) 2015-11-20 2018-11-06 Applied Materials, Inc. Lateral plasma/radical source
TWI753297B (zh) * 2018-09-03 2022-01-21 美商應用材料股份有限公司 形成含矽層的方法
TW202129061A (zh) * 2019-10-02 2021-08-01 美商應用材料股份有限公司 環繞式閘極輸入/輸出工程

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06244448A (ja) * 1993-02-18 1994-09-02 Sanyo Electric Co Ltd 半導体光センサ及び酸化膜形成方法
JPH07268612A (ja) * 1994-03-29 1995-10-17 Sumitomo Electric Ind Ltd 酸化物薄膜の作製方法
GB9408894D0 (en) * 1994-05-05 1994-06-22 Secr Defence Electronic circuit
JPH0855848A (ja) * 1994-08-11 1996-02-27 Semiconductor Energy Lab Co Ltd 酸化珪素膜の加熱処理方法
JP3484480B2 (ja) * 1995-11-06 2004-01-06 富士通株式会社 半導体装置の製造方法
JPH11111713A (ja) * 1997-10-01 1999-04-23 Japan Storage Battery Co Ltd 絶縁膜改質方法及び半導体装置の製造方法
US6124620A (en) * 1998-05-14 2000-09-26 Advanced Micro Devices, Inc. Incorporating barrier atoms into a gate dielectric using gas cluster ion beam implantation
JP2000077658A (ja) * 1998-08-28 2000-03-14 Toshiba Corp 半導体装置の製造方法
JP2000243854A (ja) * 1999-02-22 2000-09-08 Toshiba Corp 半導体装置及びその製造方法
JP2001015504A (ja) * 1999-06-30 2001-01-19 Toshiba Corp 半導体装置の製造方法
JP2003152177A (ja) * 2001-11-19 2003-05-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6706643B2 (en) * 2002-01-08 2004-03-16 Mattson Technology, Inc. UV-enhanced oxy-nitridation of semiconductor substrates
US20040164373A1 (en) * 2003-02-25 2004-08-26 Koester Steven John Shallow trench isolation structure for strained Si on SiGe
WO2004081982A2 (en) * 2003-03-07 2004-09-23 Amberwave Systems Corporation Shallow trench isolation process
US6974779B2 (en) * 2003-09-16 2005-12-13 Tokyo Electron Limited Interfacial oxidation process for high-k gate dielectric process integration
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
KR100810777B1 (ko) * 2003-12-18 2008-03-06 동경 엘렉트론 주식회사 성막 방법 및 컴퓨터 판독 가능한 기록 매체
US7244958B2 (en) * 2004-06-24 2007-07-17 International Business Machines Corporation Integration of strained Ge into advanced CMOS technology
JP4116990B2 (ja) * 2004-09-28 2008-07-09 富士通株式会社 電界効果型トランジスタおよびその製造方法
JP4604637B2 (ja) * 2004-10-07 2011-01-05 ソニー株式会社 半導体装置および半導体装置の製造方法
US7498270B2 (en) * 2005-09-30 2009-03-03 Tokyo Electron Limited Method of forming a silicon oxynitride film with tensile stress
US8168548B2 (en) * 2006-09-29 2012-05-01 Tokyo Electron Limited UV-assisted dielectric formation for devices with strained germanium-containing layers

Also Published As

Publication number Publication date
JP2013232653A (ja) 2013-11-14
JP2010505274A (ja) 2010-02-18
WO2008042528A2 (en) 2008-04-10
WO2008042528A3 (en) 2008-07-10
CN101523558A (zh) 2009-09-02
JP5419694B2 (ja) 2014-02-19
KR20090077802A (ko) 2009-07-15
US20080078987A1 (en) 2008-04-03
TWI357110B (en) 2012-01-21
KR101307658B1 (ko) 2013-09-12
TW200816315A (en) 2008-04-01
US8168548B2 (en) 2012-05-01

Similar Documents

Publication Publication Date Title
CN101523558B (zh) 用于具有应变含锗层的器件的uv辅助电介质形成
US7601648B2 (en) Method for fabricating an integrated gate dielectric layer for field effect transistors
US7910497B2 (en) Method of forming dielectric layers on a substrate and apparatus therefor
JP7637786B2 (ja) 双極子膜を用いたｍｏｓｆｅｔゲートエンジニアリング
US6930060B2 (en) Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
US20080014759A1 (en) Method for fabricating a gate dielectric layer utilized in a gate structure
CN1967780B (zh) 用于制作场效应晶体管的栅极电介质的方法
KR20090008131A (ko) 비휘발성 메모리 소자들을 위한 인터-폴리 유전체들을형성하기 위한 집적 방법
CN101765905B (zh) 半导体器件的制备方法
CN103069552A (zh) 包括具有在其侧壁上增强的氮浓度的SiON栅电介质的MOS晶体管
US20070066077A1 (en) Method for manufacturing semiconductor device
WO2007126463A2 (en) Low-temperature dielectric formation for devices with strained germanium-containing channels
US12100595B2 (en) Amorphous silicon-based scavenging and sealing EOT
KR102553773B1 (ko) 반도체 디바이스에 구조를 형성하는 방법
JP7607801B2 (ja) アモルファスシリコンベース取り除きおよびシールｅｏｔ
JPWO2004093179A1 (ja) 高誘電体膜の形成方法
JP7455968B2 (ja) Ｐｍｏｓ高誘電率金属ゲート
CN116918070A (zh) 具有偶极膜的mosfet栅极工程
JP4220991B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120111

Termination date: 20180828

CF01 Termination of patent right due to non-payment of annual fee