JP7455968B2 - Pmos高誘電率金属ゲート - Google Patents
Pmos高誘電率金属ゲート Download PDFInfo
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- JP7455968B2 JP7455968B2 JP2022525608A JP2022525608A JP7455968B2 JP 7455968 B2 JP7455968 B2 JP 7455968B2 JP 2022525608 A JP2022525608 A JP 2022525608A JP 2022525608 A JP2022525608 A JP 2022525608A JP 7455968 B2 JP7455968 B2 JP 7455968B2
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- 239000002184 metal Substances 0.000 title claims description 56
- 229910052751 metal Inorganic materials 0.000 title claims description 56
- 239000000758 substrate Substances 0.000 claims description 71
- 238000012545 processing Methods 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 51
- 239000000463 material Substances 0.000 claims description 50
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 23
- 238000000231 atomic layer deposition Methods 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 229910008482 TiSiN Inorganic materials 0.000 claims description 12
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910010038 TiAl Inorganic materials 0.000 claims description 3
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000006870 function Effects 0.000 description 34
- 239000002243 precursor Substances 0.000 description 20
- 238000012546 transfer Methods 0.000 description 18
- 230000008021 deposition Effects 0.000 description 15
- 239000007789 gas Substances 0.000 description 11
- 230000015654 memory Effects 0.000 description 9
- 238000010926 purge Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000000376 reactant Substances 0.000 description 7
- 229910052719 titanium Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012080 ambient air Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000012686 silicon precursor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000003931 anilides Chemical class 0.000 description 1
- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000005829 chemical entities Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
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Description
Claims (17)
- 高誘電率金属酸化物層上に、高誘電率キャッピング層を備え、且つ、前記高誘電率キャッピング層上に、PMOS仕事関数材料を備える金属ゲートスタックであって、
前記高誘電率キャッピング層は、TiSiNを含むとともに約5Åから約25Åの範囲内の厚さを有し、前記PMOS仕事関数材料は、MoNを含むとともに約5Åから約50Åの範囲内の厚さを有し、
TiNを含むPMOS仕事関数材料を備える金属ゲートスタックと比較して、Vfbが向上しており、
TiNを含む高誘電率キャッピング層及びMoNを含むPMOS仕事関数材料を備える金属ゲートスタックと比較して、EOTの増大が少なくなっている、金属ゲートスタック。 - Vfbが約+125mV以上向上している、請求項1に記載の金属ゲートスタック。
- Vfbが約+300mV以上向上している、請求項2に記載の金属ゲートスタック。
- Vfbが約+175mV以上向上している、請求項2に記載の金属ゲートスタック。
- Vfbが約+275mV以上向上している、請求項4に記載の金属ゲートスタック。
- 金属ゲートスタックであって、
高誘電率金属酸化物層上の、TiSiNを含む高誘電率キャッピング層と、
前記高誘電率キャッピング層上の、MoNを含むPMOS仕事関数材料と、
前記PMOS仕事関数材料上の、ゲート電極と、を備え、
TiNを含む高誘電率キャッピング層及びMoNを含むPMOS仕事関数材料を備える金属ゲートスタックと比較して、EOTの増大が少なくなっており、前記ゲート電極が、TiAlを含む第1層と、TiNを含む第2層とを備える、金属ゲートスタック。 - 前記高誘電率金属酸化物層がHfO2を含む、請求項6に記載の金属ゲートスタック。
- 前記高誘電率キャッピング層が、約5Åから約25Åの範囲内の厚さを有する、請求項6に記載の金属ゲートスタック。
- 前記PMOS仕事関数材料が、約5Åから約50Åの範囲内の厚さを有する、請求項6に記載の金属ゲートスタック。
- EOTの増大が約0.3Å以上少なくなっている、請求項6に記載の金属ゲートスタック。
- EOTの増大が、TiNを含む高誘電率キャッピング層及びTiNを含む仕事関数材料を備える金属ゲートスタックと比較して、約+0.30Å以下である、請求項6に記載の金属ゲートスタック。
- EOTの増大が約+0.05Å以下である、請求項11に記載の金属ゲートスタック。
- 酸化表面を有する基板材料であって、前記酸化表面上に前記高誘電率金属酸化物層がある、基板材料を更に含み、
TiNを含む仕事関数材料を備える金属ゲートスタックと比較して、Vfbが向上している、請求項6に記載の金属ゲートスタック。 - 金属ゲートスタックを製造する方法であって、
第1処理チャンバ内に、高誘電率金属酸化物層を備える基板を配置することと、
前記高誘電率金属酸化物層上に、原子層堆積によって、TiSiNを含む高誘電率キャッピング層を堆積させることと、
前記基板を第2処理チャンバに移送することと、
前記高誘電率キャッピング層上に、原子層堆積によって、MoNを含むPMOS仕事関数材料を堆積させることと、
前記基板を第3処理チャンバに移送することと、
前記PMOS仕事関数材料上に、一又は複数の異なるエピタキシャル成長プロセスによって、MoNを含むゲート電極を堆積させることであって、前記ゲート電極が、TiAlを含む第1層と、TiNを含む第2層とを備える、ゲート電極を堆積させることと、
を含む、方法。 - 前記第1処理チャンバ、前記第2処理チャンバ及び前記第3処理チャンバが一体化されており、前記方法が真空を破断することなく実施される、請求項14に記載の方法。
- 前記第1処理チャンバ、前記第2処理チャンバ及び前記第3処理チャンバが同じ処理ツールの一部である、請求項15に記載の方法。
- 前記第1処理チャンバ、前記第2処理チャンバ及び前記第3処理チャンバがそれぞれ別々の処理ツールである、請求項15に記載の方法。
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US201962931211P | 2019-11-05 | 2019-11-05 | |
US62/931,211 | 2019-11-05 | ||
PCT/US2020/058856 WO2021091995A1 (en) | 2019-11-05 | 2020-11-04 | Pmos high-k metal gates |
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US10879392B2 (en) * | 2018-07-05 | 2020-12-29 | Samsung Electronics Co., Ltd. | Semiconductor device |
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JP2005217309A (ja) | 2004-01-30 | 2005-08-11 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2009278083A (ja) | 2008-04-22 | 2009-11-26 | Imec | 二重仕事関数半導体デバイスの製造方法及びそのデバイス |
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US20210134972A1 (en) | 2021-05-06 |
WO2021091995A1 (en) | 2021-05-14 |
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