JP5396456B2 - ウエハ以上の物品に対する液体処理のための装置 - Google Patents
ウエハ以上の物品に対する液体処理のための装置 Download PDFInfo
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- JP5396456B2 JP5396456B2 JP2011257879A JP2011257879A JP5396456B2 JP 5396456 B2 JP5396456 B2 JP 5396456B2 JP 2011257879 A JP2011257879 A JP 2011257879A JP 2011257879 A JP2011257879 A JP 2011257879A JP 5396456 B2 JP5396456 B2 JP 5396456B2
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- wafer
- mask
- shaped article
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- 239000007788 liquid Substances 0.000 title claims abstract description 90
- 235000012431 wafers Nutrition 0.000 title description 104
- 125000006850 spacer group Chemical group 0.000 claims abstract description 31
- 230000009471 action Effects 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 4
- 239000012530 fluid Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000004081 narcotic agent Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Coating Apparatus (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- ing And Chemical Polishing (AREA)
- Chemically Coating (AREA)
- Photographic Processing Devices Using Wet Methods (AREA)
Description
3…スペーサ手段、
4…基部本体、
6、7…ノズル。
Claims (7)
- ウエハ形状の物品(W)の規定された部分に対する液体処理のための装置であって、
ウエハ形状の物品の位置を周側で区切り、ウエハ形状の物品の主面に対してほぼ垂直に位置された、ウエハ形状の物品を保持するためのピン(53)と、
液体処理される規定された部分の領域に、大きさと形状とにおいて対応したマスク(2)と、
毛管作用力によって前記マスクとウエハ形状の物品の規定された領域との間に液体が保持されるように、マスクとウエハ形状の物品とを互いに少し所定距離を置いて維持させるスペーサ手段(45,46)と、
ウエハ形状の物品の表面に液体を分配する手段と、
前記マスクとウエハ形状の物品との間に位置された液体が毛管作用力により保持されないように、マスクとウエハ形状の物品との間の距離(a1)を、増大された距離(a2)に長くし得る距離変更手段(44,49)と、を具備し、
前記マスクと前記ピンとは、マスクに垂直な軸(A)を中心とした回転に対して、互いに静止されており、
前記スペーサ手段は、ウエハ形状の物品に向けられたガス供給手段(45,46)から成り、このガス供給手段により、ウエハ形状の物品がガスのクッション上に保持され、
前記距離変更手段は、ウエハ形状の物品の主面(Wf)に向けられた別のガス供給手段(44,49)から成り、このガス供給手段により、ウエハ形状の物品がガスのクッション上に保持され、
前記スペーサ手段と距離変更手段は、同一構造のガス供給手段(44,45,46,49)であり、且つ前記ガス供給手段により少なくとも2つの異なる動作状態に変更でき、ウエハ形状の物品とマスクとの間の2つの異なった距離が調節でき、
前記ガス供給手段は、外側のノズル(46)と内側のノズル(49)との2列の円形に配置されたノズルから成ることを特徴とする装置。 - 前記マスク(2)は、リングの形状を有する請求項1記載の装置。
- 前記リングは、ウエハ形状の物品の外径より小さい内径と、ウエハ形状の物品の外径と少なくとも同じ大きさの外径とを有する請求項2記載の装置。
- 前記スペーサ手段は、マスクとウエハ形状の物品とを、0.05乃至1mmの距離(a1)を置いて維持させる請求項1記載の装置。
- 前記距離変更手段は、液体処理の間または直後にマスクとウエハ形状の物品の間の距離を変更し得るように作られる請求項1記載の装置。
- 前記ピンは、ウエハ形状の物品が回転するように回転できる請求項1記載の装置。
- 前記液体分配手段は、前記マスクに面するウエハ形状の物品の表面に向けられた液体ライン(28)を有する請求項1記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00123714A EP1202326B1 (de) | 2000-10-31 | 2000-10-31 | Vorrichtung zur Flüssigkeitsbehandlung von scheibenförmigen Gegenständen |
EP00123714.8 | 2000-10-31 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001334983A Division JP4911849B2 (ja) | 2000-10-31 | 2001-10-31 | ウエハ形状の物品に対する液体処理のための装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012080113A JP2012080113A (ja) | 2012-04-19 |
JP5396456B2 true JP5396456B2 (ja) | 2014-01-22 |
Family
ID=8170251
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001334983A Expired - Lifetime JP4911849B2 (ja) | 2000-10-31 | 2001-10-31 | ウエハ形状の物品に対する液体処理のための装置 |
JP2011257879A Expired - Fee Related JP5396456B2 (ja) | 2000-10-31 | 2011-11-25 | ウエハ以上の物品に対する液体処理のための装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001334983A Expired - Lifetime JP4911849B2 (ja) | 2000-10-31 | 2001-10-31 | ウエハ形状の物品に対する液体処理のための装置 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7172674B2 (ja) |
EP (3) | EP1372186B1 (ja) |
JP (2) | JP4911849B2 (ja) |
KR (2) | KR100796709B1 (ja) |
CN (1) | CN1175476C (ja) |
AT (2) | ATE257277T1 (ja) |
DE (2) | DE50015481D1 (ja) |
SG (1) | SG128415A1 (ja) |
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2000
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- 2000-10-31 EP EP03018179A patent/EP1372186B1/de not_active Expired - Lifetime
- 2000-10-31 AT AT00123714T patent/ATE257277T1/de active
- 2000-10-31 EP EP03017235A patent/EP1369904B1/de not_active Expired - Lifetime
- 2000-10-31 DE DE50004935T patent/DE50004935D1/de not_active Expired - Lifetime
- 2000-10-31 EP EP00123714A patent/EP1202326B1/de not_active Expired - Lifetime
- 2000-10-31 AT AT03018179T patent/ATE417356T1/de active
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- 2001-10-24 SG SG200106579A patent/SG128415A1/en unknown
- 2001-10-31 US US09/984,707 patent/US7172674B2/en not_active Expired - Lifetime
- 2001-10-31 CN CNB011377011A patent/CN1175476C/zh not_active Expired - Fee Related
- 2001-10-31 JP JP2001334983A patent/JP4911849B2/ja not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
SG128415A1 (en) | 2007-01-30 |
EP1202326A1 (de) | 2002-05-02 |
EP1369904A3 (de) | 2005-10-26 |
DE50015481D1 (de) | 2009-01-22 |
US20070084561A1 (en) | 2007-04-19 |
KR20070100210A (ko) | 2007-10-10 |
EP1369904A2 (de) | 2003-12-10 |
US20020050244A1 (en) | 2002-05-02 |
ATE257277T1 (de) | 2004-01-15 |
EP1372186A2 (de) | 2003-12-17 |
DE50004935D1 (de) | 2004-02-05 |
CN1351368A (zh) | 2002-05-29 |
JP4911849B2 (ja) | 2012-04-04 |
EP1202326B1 (de) | 2004-01-02 |
US20050026448A1 (en) | 2005-02-03 |
KR100789337B1 (ko) | 2007-12-28 |
ATE417356T1 (de) | 2008-12-15 |
US7988818B2 (en) | 2011-08-02 |
CN1175476C (zh) | 2004-11-10 |
US7172674B2 (en) | 2007-02-06 |
EP1369904B1 (de) | 2009-01-21 |
JP2002246364A (ja) | 2002-08-30 |
KR20020033527A (ko) | 2002-05-07 |
JP2012080113A (ja) | 2012-04-19 |
US7799695B2 (en) | 2010-09-21 |
EP1372186A3 (de) | 2005-10-26 |
EP1372186B1 (de) | 2008-12-10 |
KR100796709B1 (ko) | 2008-01-21 |
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