JP5395102B2 - 気相成長装置 - Google Patents
気相成長装置 Download PDFInfo
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- JP5395102B2 JP5395102B2 JP2011042290A JP2011042290A JP5395102B2 JP 5395102 B2 JP5395102 B2 JP 5395102B2 JP 2011042290 A JP2011042290 A JP 2011042290A JP 2011042290 A JP2011042290 A JP 2011042290A JP 5395102 B2 JP5395102 B2 JP 5395102B2
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- gas
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- heating
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Description
(特徴1)本明細書で開示するシリコン膜の気相成長方法は、トリクロロシランガス(SiHCl3)を加熱・分解して二塩化シリコンガス(SiCl2)と塩酸ガス(HCl)を生成する工程と、生成されたHClガスをシラン系ガスと混合・反応させてHClガスの濃度をSiCl2ガスの濃度に対して相対的に低下させる工程と、混合ガスを基板の表面に供給する工程と、を備えていることが望ましい。
(特徴2)混合室内のガスの温度は、500〜800℃であることが望ましい。混合室内においてSiHCl3ガスの分解が抑制されるので、気相成長室内に供給されるHClガスの濃度が増加することを抑制することができる。
(特徴3)気相成長装置の気相成長室には、ガス供給口と基板の間に仕切り板が設けられていることが望ましい。この場合、混合室は、その仕切り板と気相成長室の壁の一部によって区画された空間であってもよい。気相成長室の一部が混合室を兼ねており、別個に混合室を設ける必要がない。
式(1):SiHCl3→SiCl2+HCl
式(2):SiH2Cl2+HCl→SiHCl3+H2
式(3):SiH2Cl2→SiCl2+H2
式(4):SiCl2+H2→Si+2HCl
式(5):Si+3HCl→SiHCl3+H2
10,50:気相成長装置
32:基板
36:気相成長室
38:混合室
40:第2貯蔵庫
42:第1貯蔵庫
Claims (3)
- 基板の表面にシリコン膜を成長させる気相成長装置であって、
気相成長室と、加熱室と、混合室と、トリクロロシランガスを貯蔵する第1貯蔵庫と、塩酸ガスと反応するシラン系ガスを貯蔵する第2貯蔵庫と、を備えており、
前記加熱室は、前記第1貯蔵庫と前記混合室に連通しており、前記第1貯蔵庫から供給された前記トリクロロシランガスを加熱した後に前記混合室に供給しており、
前記混合室は、前記第2貯蔵庫と前記気相成長室に連通しており、前記加熱室から供給されたガスと前記シラン系ガスを混合させて、その混合ガスを前記気相成長室に供給しており、
前記加熱室の室内温度が、前記混合室の室内温度よりも高い気相成長装置。 - 前記シラン系ガスが、ジクロロシランガスである請求項1に記載の気相成長装置。
- 前記加熱室は、前記トリクロロシランガスを700〜1000℃に加熱する加熱手段を有する請求項1又は2に記載の気相成長装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011042290A JP5395102B2 (ja) | 2011-02-28 | 2011-02-28 | 気相成長装置 |
US14/001,797 US8956458B2 (en) | 2011-02-28 | 2011-08-31 | Vapor deposition device and vapor deposition method |
CN201180068690.9A CN103403841B (zh) | 2011-02-28 | 2011-08-31 | 气相生长装置及气相生长方法 |
PCT/JP2011/069763 WO2012117590A1 (ja) | 2011-02-28 | 2011-08-31 | 気相成長装置及び気相成長方法 |
DE112011104976.5T DE112011104976T8 (de) | 2011-02-28 | 2011-08-31 | Gasphasenabscheidungsvorrichtung und Gasphasenabscheidungsverfahren |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011042290A JP5395102B2 (ja) | 2011-02-28 | 2011-02-28 | 気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012182183A JP2012182183A (ja) | 2012-09-20 |
JP5395102B2 true JP5395102B2 (ja) | 2014-01-22 |
Family
ID=46757544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011042290A Expired - Fee Related JP5395102B2 (ja) | 2011-02-28 | 2011-02-28 | 気相成長装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8956458B2 (ja) |
JP (1) | JP5395102B2 (ja) |
CN (1) | CN103403841B (ja) |
DE (1) | DE112011104976T8 (ja) |
WO (1) | WO2012117590A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104120408B (zh) * | 2014-08-06 | 2016-09-07 | 上海世山科技有限公司 | 一种改进衬底气流方向的hvpe反应器 |
CN117265507A (zh) * | 2016-11-11 | 2023-12-22 | 优材科技有限公司 | 加热器模块、薄膜沉积装置及方法 |
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JPH1154496A (ja) * | 1997-08-07 | 1999-02-26 | Tokyo Electron Ltd | 熱処理装置及びガス処理装置 |
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-
2011
- 2011-02-28 JP JP2011042290A patent/JP5395102B2/ja not_active Expired - Fee Related
- 2011-08-31 DE DE112011104976.5T patent/DE112011104976T8/de not_active Ceased
- 2011-08-31 US US14/001,797 patent/US8956458B2/en not_active Expired - Fee Related
- 2011-08-31 CN CN201180068690.9A patent/CN103403841B/zh not_active Expired - Fee Related
- 2011-08-31 WO PCT/JP2011/069763 patent/WO2012117590A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2012117590A1 (ja) | 2012-09-07 |
DE112011104976T8 (de) | 2014-04-17 |
CN103403841B (zh) | 2016-03-02 |
JP2012182183A (ja) | 2012-09-20 |
CN103403841A (zh) | 2013-11-20 |
US8956458B2 (en) | 2015-02-17 |
US20140038395A1 (en) | 2014-02-06 |
DE112011104976T5 (de) | 2014-01-23 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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LAPS | Cancellation because of no payment of annual fees |