DE112011104976T8 - Gasphasenabscheidungsvorrichtung und Gasphasenabscheidungsverfahren - Google Patents

Gasphasenabscheidungsvorrichtung und Gasphasenabscheidungsverfahren Download PDF

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Publication number
DE112011104976T8
DE112011104976T8 DE112011104976.5T DE112011104976T DE112011104976T8 DE 112011104976 T8 DE112011104976 T8 DE 112011104976T8 DE 112011104976 T DE112011104976 T DE 112011104976T DE 112011104976 T8 DE112011104976 T8 DE 112011104976T8
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DE
Germany
Prior art keywords
vapor deposition
deposition method
deposition apparatus
vapor
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE112011104976.5T
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English (en)
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DE112011104976T5 (de
Inventor
Takahiro Kozawa
Kenji Nakashima
Keeyoung Jun
Takahiro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Motor Corp
Original Assignee
Toyota Motor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Motor Corp filed Critical Toyota Motor Corp
Publication of DE112011104976T5 publication Critical patent/DE112011104976T5/de
Application granted granted Critical
Publication of DE112011104976T8 publication Critical patent/DE112011104976T8/de
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
DE112011104976.5T 2011-02-28 2011-08-31 Gasphasenabscheidungsvorrichtung und Gasphasenabscheidungsverfahren Ceased DE112011104976T8 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011042290A JP5395102B2 (ja) 2011-02-28 2011-02-28 気相成長装置
JP2011-042290 2011-02-28
PCT/JP2011/069763 WO2012117590A1 (ja) 2011-02-28 2011-08-31 気相成長装置及び気相成長方法

Publications (2)

Publication Number Publication Date
DE112011104976T5 DE112011104976T5 (de) 2014-01-23
DE112011104976T8 true DE112011104976T8 (de) 2014-04-17

Family

ID=46757544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112011104976.5T Ceased DE112011104976T8 (de) 2011-02-28 2011-08-31 Gasphasenabscheidungsvorrichtung und Gasphasenabscheidungsverfahren

Country Status (5)

Country Link
US (1) US8956458B2 (de)
JP (1) JP5395102B2 (de)
CN (1) CN103403841B (de)
DE (1) DE112011104976T8 (de)
WO (1) WO2012117590A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104120408B (zh) * 2014-08-06 2016-09-07 上海世山科技有限公司 一种改进衬底气流方向的hvpe反应器
CN108070848A (zh) * 2016-11-11 2018-05-25 优材科技有限公司 加热器模块、薄膜沉积装置及方法

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2650003B2 (ja) 1991-02-14 1997-09-03 信越化学工業株式会社 化学的気相成長法によるシリコン単結晶の製造方法およびその原料クロロシラン類中の超微量元素と製造されたシリコン単結晶中の超微量元素の分別定量方法
US5483918A (en) 1991-02-14 1996-01-16 Shin-Etsu Chemical Co., Ltd. Method for producing single-crystal silicon by chemical vapor deposition and method for fractional determination of ultratrace elements present in chlorosilanes as starting materials and single-crystal silicon produced
JP3444327B2 (ja) * 1996-03-04 2003-09-08 信越半導体株式会社 シリコン単結晶薄膜の製造方法
JPH1154496A (ja) * 1997-08-07 1999-02-26 Tokyo Electron Ltd 熱処理装置及びガス処理装置
KR100253089B1 (ko) * 1997-10-29 2000-05-01 윤종용 반도체소자 제조용 화학기상증착장치 및 이의 구동방법, 그 공정챔버 세정공정 레시피 최적화방법
JP2000058456A (ja) * 1998-08-07 2000-02-25 Mitsubishi Materials Silicon Corp エピタキシャルウェーハの製造装置
US6225237B1 (en) * 1998-09-01 2001-05-01 Micron Technology, Inc. Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands
US6217659B1 (en) 1998-10-16 2001-04-17 Air Products And Chemical, Inc. Dynamic blending gas delivery system and method
JP3905678B2 (ja) * 2000-02-28 2007-04-18 株式会社堀場製作所 薄膜堆積方法とその装置および薄膜堆積方法に用いるｆｔｉｒガス分析計並びに薄膜堆積方法に用いる混合ガス供給装置
JP2001351864A (ja) 2000-06-09 2001-12-21 Toshiba Ceramics Co Ltd 薄膜気相成長方法及び該方法に用いられる薄膜気相成長装置
US6902622B2 (en) * 2001-04-12 2005-06-07 Mattson Technology, Inc. Systems and methods for epitaxially depositing films on a semiconductor substrate
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US6794284B2 (en) * 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US8153281B2 (en) * 2003-06-23 2012-04-10 Superpower, Inc. Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape
JP2006059938A (ja) * 2004-08-19 2006-03-02 Hitachi Kokusai Electric Inc 基板処理装置
US7678712B2 (en) * 2005-03-22 2010-03-16 Honeywell International, Inc. Vapor phase treatment of dielectric materials
US8148271B2 (en) * 2005-08-05 2012-04-03 Hitachi Kokusai Electric Inc. Substrate processing apparatus, coolant gas supply nozzle and semiconductor device manufacturing method
US8337959B2 (en) * 2006-11-28 2012-12-25 Nanonex Corporation Method and apparatus to apply surface release coating for imprint mold
JP5357037B2 (ja) * 2007-03-23 2013-12-04 パナソニック株式会社 プラズマドーピング装置及び方法
JP4933399B2 (ja) * 2007-10-25 2012-05-16 株式会社ニューフレアテクノロジー 半導体製造方法および半導体製造装置
JP2009135157A (ja) * 2007-11-29 2009-06-18 Nuflare Technology Inc 気相成長装置及び気相成長方法
JP2009135230A (ja) * 2007-11-29 2009-06-18 Nuflare Technology Inc 気相成長膜形成装置および気相成長膜形成方法
JP5039076B2 (ja) * 2008-03-24 2012-10-03 株式会社東芝 エピタキシャルウェーハの製造装置及び製造方法
JP4961381B2 (ja) * 2008-04-14 2012-06-27 株式会社日立国際電気 基板処理装置、基板処理方法及び半導体装置の製造方法
US20090324826A1 (en) * 2008-06-27 2009-12-31 Hitoshi Kato Film Deposition Apparatus, Film Deposition Method, and Computer Readable Storage Medium
US7927984B2 (en) * 2008-11-05 2011-04-19 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition
JP2010153483A (ja) * 2008-12-24 2010-07-08 Toyota Motor Corp 成膜装置、及び、成膜方法
US8507051B2 (en) * 2009-07-15 2013-08-13 Mitsubishi Materials Corporation Polycrystalline silicon producing method
JP5820143B2 (ja) * 2010-06-22 2015-11-24 株式会社ニューフレアテクノロジー 半導体製造装置、半導体製造方法及び半導体製造装置のクリーニング方法
JP5759690B2 (ja) * 2010-08-30 2015-08-05 株式会社日立国際電気 膜の形成方法、半導体装置の製造方法及び基板処理装置
WO2012099700A1 (en) * 2010-12-31 2012-07-26 Solexel, Inc. Deposition systems and processes
JP6022166B2 (ja) * 2011-02-28 2016-11-09 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US20120244684A1 (en) * 2011-03-24 2012-09-27 Kunihiko Suzuki Film-forming apparatus and method
WO2012177099A2 (en) * 2011-06-23 2012-12-27 Lg Innotek Co., Ltd. Apparatus and method for deposition
JP5951443B2 (ja) * 2011-12-09 2016-07-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
WO2013094680A1 (ja) * 2011-12-20 2013-06-27 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および気化装置
JP6125846B2 (ja) * 2012-03-22 2017-05-10 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
CN103403841B (zh) 2016-03-02
US20140038395A1 (en) 2014-02-06
DE112011104976T5 (de) 2014-01-23
JP2012182183A (ja) 2012-09-20
WO2012117590A1 (ja) 2012-09-07
CN103403841A (zh) 2013-11-20
JP5395102B2 (ja) 2014-01-22
US8956458B2 (en) 2015-02-17

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