JP5392628B2 - 層間絶縁膜および配線構造と、それらの製造方法 - Google Patents
層間絶縁膜および配線構造と、それらの製造方法 Download PDFInfo
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- JP5392628B2 JP5392628B2 JP2010227327A JP2010227327A JP5392628B2 JP 5392628 B2 JP5392628 B2 JP 5392628B2 JP 2010227327 A JP2010227327 A JP 2010227327A JP 2010227327 A JP2010227327 A JP 2010227327A JP 5392628 B2 JP5392628 B2 JP 5392628B2
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- film
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- 239000011229 interlayer Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000007789 gas Substances 0.000 claims description 136
- 239000010410 layer Substances 0.000 claims description 98
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 85
- 238000000137 annealing Methods 0.000 claims description 61
- 238000000034 method Methods 0.000 claims description 43
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005121 nitriding Methods 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 28
- 239000010949 copper Substances 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 13
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 9
- DBJLJFTWODWSOF-UHFFFAOYSA-L nickel(ii) fluoride Chemical compound F[Ni]F DBJLJFTWODWSOF-UHFFFAOYSA-L 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 238000007872 degassing Methods 0.000 description 82
- 238000010586 diagram Methods 0.000 description 39
- 239000004065 semiconductor Substances 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 229910052814 silicon oxide Inorganic materials 0.000 description 18
- 238000009832 plasma treatment Methods 0.000 description 17
- 230000008569 process Effects 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 238000005259 measurement Methods 0.000 description 12
- 230000018044 dehydration Effects 0.000 description 10
- 238000006297 dehydration reaction Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 238000010943 off-gassing Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000011065 in-situ storage Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052724 xenon Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 229910052743 krypton Inorganic materials 0.000 description 6
- 208000037998 chronic venous disease Diseases 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
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- 238000009413 insulation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000003682 fluorination reaction Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- -1 oxygen radicals Chemical class 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 2
- 238000004611 spectroscopical analysis Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- YBMDPYAEZDJWNY-UHFFFAOYSA-N 1,2,3,3,4,4,5,5-octafluorocyclopentene Chemical compound FC1=C(F)C(F)(F)C(F)(F)C1(F)F YBMDPYAEZDJWNY-UHFFFAOYSA-N 0.000 description 1
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- BKGFFXQUCIPKJK-UHFFFAOYSA-N 1-fluorocyclopropene Chemical compound FC1=CC1 BKGFFXQUCIPKJK-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910021587 Nickel(II) fluoride Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- SKRPCQXQBBHPKO-UHFFFAOYSA-N fluorocyclobutane Chemical compound FC1CCC1 SKRPCQXQBBHPKO-UHFFFAOYSA-N 0.000 description 1
- IZZJFOLOOYFYFG-VKHMYHEASA-N fluorocyclopropane Chemical compound F[C@H]1[CH]C1 IZZJFOLOOYFYFG-VKHMYHEASA-N 0.000 description 1
- XPBBUZJBQWWFFJ-UHFFFAOYSA-N fluorosilane Chemical compound [SiH3]F XPBBUZJBQWWFFJ-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 150000002831 nitrogen free-radicals Chemical class 0.000 description 1
- 238000006902 nitrogenation reaction Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
- H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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- H—ELECTRICITY
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
- H01L23/53295—Stacked insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
Description
2 第1の層間絶縁膜
2a CFx膜
2b CFx膜
3 第1の接着層
4 第2の層間絶縁膜
5 第2の接着層
6 硬質マスク
7 ビアホール
8 電極
9 溝
10 配線構造
11 配線導体(Cu)
12 アンテナ
13 ガス導入管
14 シリコンウエハ
21 絶縁体板
22 下段シャワープレート
23 上段シャワープレート
24 処理室
26 導入管
30 脱ガス測定装置
31 処理室
32 放電電極
33 配管
34,35 配管
36a,36b 配管
37a,37b 真空ポンプ
38 排気管
39 矢印
40 加熱炉
41 加熱用ヒータ
42 光イオン検出器
44 マスフローコントローラ
45 矢印
46 試料
47 導入配管
48 配管
51 バルブ
52 排気管
53 バルブ
54 バルブ
56 配管
57 マスフローコントローラ
58 マスフローコントローラ
59 矢印
61 可変容量制御弁
62a,62b マスフローメータ
63 矢印
64 矢印
65 配管
66 矢印
71 バリアーキャップ層
72 SiOC膜
73 PAR(低誘電率Si層)
74 硬質マスク
100 配線構造
102 プラズマ処理装置
103 脱ガス測定システム
Claims (19)
- フルオロカーボンガスと希ガスとを用いて下地層上にフルオロカーボン膜を形成する方法において、希ガスを用いて発生させたプラズマによって、前記下地層上にフルオロカーボン膜を形成する工程と、前記フルオロカーボン膜の表面をAr/N 2 プラズマによりチッ化する工程とを備えていることを特徴とする成膜方法。
- 請求項1に記載の成膜方法において、前記下地層は、基体上に形成されたSiCN層、Si3CN4層、SiO2層、およびSiCO層の内の少なくとも一つを含む層であることを特徴とする成膜方法。
- 請求項1又は2に記載の成膜方法において、前記希ガスに窒化性のガスおよび酸化性の少なくとも一方のガスを加え、かつ反応性ガスとしてSiH4ガスを流して、Si3N4,SiCN,およびSiCOの内の少なくとも一種の膜を形成することを特徴とする成膜方法。
- 請求項1乃至3の内のいずれか一つに記載の成膜方法において、前記フルオロカーボン膜をアニール処理後、表面をチッ化することを特徴とする成膜方法。
- 多層配線構造の製造方法において、層間絶縁膜の少なくとも一部としてフルオロカーボン膜を形成する工程と、前記フルオロカーボン膜の表面をAr/N 2 プラズマによりチッ化する工程とを有することを特徴とする多層配線構造の製造方法。
- 請求項5に記載の多層配線構造の製造方法において、前記チッ化工程は、200℃以上の温度で行うことを特徴とする多層配線構造の製造方法。
- フルオロカーボンガスと希ガスとを用いて下地層上にフルオロカーボン膜を形成する工程と、前記フルオロカーボン膜の表面をAr/N 2 プラズマによりチッ化する工程とを備えていることを特徴とする配線構造の製造方法。
- 請求項7に記載の配線構造の製造方法において、前記下地層は、基体上に形成されたSiCN層、Si3N4層、SiCO層、およびSiO2層の内の少なくとも一つを含むことを特徴とする配線構造の製造方法。
- 請求項7又は8に記載の配線構造の製造方法において、前記希ガスに窒化性のガスおよび酸化性のガスの内の少なくとも一方を加えて、反応性ガスとしてSiH4ガスを流して、Si3N4またはSiCN,およびSiCOの少なくとも一方の膜を形成することを特徴とする配線構造の製造方法。
- 請求項7乃至9の内のいずれか一つに記載の配線構造の製造方法において、更に、前記フルオロカーボン膜にコンタクトホールを形成する工程と、前記コンタクトホールに金属を充填する工程とを備えていることを特徴とする配線構造の製造方法。
- 請求項7乃至10の内のいずれか一つに記載の配線構造の製造方法において、前記コンタクトホールに、少なくとも銅を充填する工程と、前記銅の拡散を防止するためのバリア層として少なくともニッケルのフッ化物層を前記コンタクトホール側面に形成する工程とを備えていることを特徴とする配線構造の製造方法。
- 多層配線構造を有する電子装置の製造方法において、フルオロカーボンガスと希ガスとを用いて下地層上にフルオロカーボン膜を形成する工程と、前記フルオロカーボン膜の表面をAr/N 2 プラズマにより窒化する工程を備えていることを特徴とする電子装置の製造方法。
- 請求項12に記載の電子装置の製造方法において、前記下地層は、SiCN層、Si3CN4層、SiO2層、およびSiCO層の少なくとも一つを含むことを特徴とする電子装置の製造方法。
- 請求項12又は13に記載の電子装置の製造方法において、前記フルオロカーボン膜を形成する工程の後に、チャンバー内において水素と酸素の混合ガスでプラズマを発生させ、前記チャンバー内壁のクリーニングを行う工程を有することを特徴とする電子装置の製造方法。
- 減圧したチャンバー内にプラズマを発生させて前記チャンバー内に設置された基板上にフルオロカーボンを成膜し、表面をAr/N 2 プラズマによりチッ化した後、前記チャンバー内において水素と酸素の混合ガスでプラズマを発生させ、前記チャンバー内壁のクリーニングを行うことを特徴とするチャンバーのクリーニング方法。
- 多層配線構造を有する電子装置の製造方法において、層間絶縁膜の少なくとも一部としてフルオロカーボン膜を形成する工程と、前記フルオロカーボン膜の表面をAr/N 2 プラズマによりチッ化する工程とを有することを特徴とする電子装置の製造方法。
- 請求項16に記載の電子装置の製造方法において、前記フルオロカーボン膜にコンタクトホールを形成する工程と、前記コンタクトホールに金属を充填する工程とを備えていることを特徴とする電子装置の製造方法。
- 請求項16または17に記載の電子装置の製造方法において、前記コンタクトホールに、少なくとも銅を含む導電材料を充填する工程と、前記銅の拡散を防止するためのバリア層を前記コンタクトホール側面に形成する工程とを備えていることを特徴とする電子装置の製造方法。
- 請求項18に記載の電子装置の製造方法において、前記バリア層は、ニッケルのフッ化物を含むことを特徴とする電子装置の製造方法。
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2006
- 2006-06-20 EP EP06766953.1A patent/EP1898455B1/en not_active Expired - Fee Related
- 2006-06-20 JP JP2007522286A patent/JP4993607B2/ja not_active Expired - Fee Related
- 2006-06-20 KR KR1020107029176A patent/KR101185757B1/ko not_active IP Right Cessation
- 2006-06-20 CN CN2006800223179A patent/CN101238555B/zh not_active Expired - Fee Related
- 2006-06-20 WO PCT/JP2006/312292 patent/WO2006137384A1/ja active Application Filing
- 2006-06-20 TW TW095122034A patent/TWI402964B/zh not_active IP Right Cessation
- 2006-06-20 US US11/922,476 patent/US8193642B2/en not_active Expired - Fee Related
- 2006-06-20 TW TW100117287A patent/TWI450379B/zh not_active IP Right Cessation
- 2006-06-20 CN CN2010106218717A patent/CN102148217A/zh active Pending
- 2006-06-20 KR KR1020077027994A patent/KR101256035B1/ko not_active IP Right Cessation
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CN102148217A (zh) | 2011-08-10 |
US20090108413A1 (en) | 2009-04-30 |
US8193642B2 (en) | 2012-06-05 |
TWI402964B (zh) | 2013-07-21 |
KR20110014665A (ko) | 2011-02-11 |
EP1898455B1 (en) | 2013-05-15 |
CN101238555B (zh) | 2011-12-07 |
KR20080021632A (ko) | 2008-03-07 |
TW201140795A (en) | 2011-11-16 |
JP2011014933A (ja) | 2011-01-20 |
KR101185757B1 (ko) | 2012-09-25 |
TWI450379B (zh) | 2014-08-21 |
WO2006137384A1 (ja) | 2006-12-28 |
EP1898455A1 (en) | 2008-03-12 |
CN101238555A (zh) | 2008-08-06 |
US20110140276A1 (en) | 2011-06-16 |
TW200721443A (en) | 2007-06-01 |
JPWO2006137384A1 (ja) | 2009-01-22 |
KR101256035B1 (ko) | 2013-04-18 |
JP4993607B2 (ja) | 2012-08-08 |
EP1898455A4 (en) | 2009-11-11 |
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