JP4194508B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP4194508B2 JP4194508B2 JP2004051432A JP2004051432A JP4194508B2 JP 4194508 B2 JP4194508 B2 JP 4194508B2 JP 2004051432 A JP2004051432 A JP 2004051432A JP 2004051432 A JP2004051432 A JP 2004051432A JP 4194508 B2 JP4194508 B2 JP 4194508B2
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- 239000004065 semiconductor Substances 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 34
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 29
- 229910052802 copper Inorganic materials 0.000 claims description 29
- 239000010949 copper Substances 0.000 claims description 29
- 239000011148 porous material Substances 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- 238000004380 ashing Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 238000004140 cleaning Methods 0.000 claims description 17
- 239000007789 gas Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 15
- 238000005498 polishing Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 150000002170 ethers Chemical class 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- 229920000292 Polyquinoline Polymers 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 description 20
- 239000010410 layer Substances 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- -1 polysiloxane Polymers 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 230000008016 vaporization Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 239000011800 void material Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004341 Octafluorocyclobutane Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 2
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- VZPPHXVFMVZRTE-UHFFFAOYSA-N [Kr]F Chemical compound [Kr]F VZPPHXVFMVZRTE-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000003361 porogen Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1005—Formation and after-treatment of dielectrics
- H01L2221/1042—Formation and after-treatment of dielectrics the dielectric comprising air gaps
- H01L2221/1047—Formation and after-treatment of dielectrics the dielectric comprising air gaps the air gaps being formed by pores in the dielectric
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
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- Power Engineering (AREA)
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- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
2 絶縁膜組成物
3 非多孔質絶縁膜
4 CMPストッパ膜
5 レジストパターン
6 溝
7 空孔
8 多孔質絶縁膜
9 バリアメタル膜
10 銅層
11 銅配線
Claims (4)
- 半導体基板の上方に、絶縁膜前駆体および空孔形成材を含む絶縁膜組成物を塗布する工程と、
前記絶縁膜組成物に対して不活性ガス雰囲気下、350℃以下の温度で第1の加熱処理を行い、前記絶縁膜前駆体を重合させて非多孔質絶縁膜を形成する工程と、
前記非多孔質絶縁膜の上にCMPストッパ膜を形成する工程と、
前記CMPストッパ膜の上にレジストパターンを形成する工程と、
前記レジストパターンをマスクとして前記CMPストッパ膜および前記非多孔質絶縁膜にドライエッチングを行い、前記非多孔質絶縁膜に溝を形成する工程と、
前記レジストパターンをアッシングにより除去する工程と、
前記アッシング後に前記半導体基板の表面を洗浄する工程と、
前記洗浄後に前記非多孔質絶縁膜に対して酸化性ガス雰囲気下で第2の加熱処理を行い、前記非多孔質絶縁膜から前記空孔形成材を除去することによって多孔質絶縁膜を形成する工程と、
前記CMPストッパ膜の上および前記溝の内面にバリアメタル膜を形成する工程と、
前記溝を埋め込むようにして前記バリアメタル膜の上に銅層を形成する工程と、
前記銅層および前記バリアメタル膜をCMP法により研磨して銅配線を形成する工程とを有することを特徴とする半導体装置の製造方法。 - 前記第2の加熱処理の温度は、前記第1の加熱処理の温度と同じまたはこれより低い温度である請求項1に記載の半導体装置の製造方法。
- 前記アッシングを水素を含む還元性雰囲気下で行う請求項1または2に記載の半導体装置の製造方法。
- 前記多孔質絶縁膜は、MSQ膜、HSQ膜、有機無機ハイブリッド膜、ポリイミド誘導体膜、ポリアリルエーテル誘導体膜、ポリキノリン誘導体膜およびポリパラキシレン誘導体膜よりなる群から選ばれる1の膜が多孔質化された膜である請求項1〜3のいずれか1に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004051432A JP4194508B2 (ja) | 2004-02-26 | 2004-02-26 | 半導体装置の製造方法 |
TW093138353A TW200529392A (en) | 2004-02-26 | 2004-12-10 | Method for manufacturing semiconductor device |
US11/010,344 US7064060B2 (en) | 2004-02-26 | 2004-12-14 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004051432A JP4194508B2 (ja) | 2004-02-26 | 2004-02-26 | 半導体装置の製造方法 |
Publications (2)
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US7696625B2 (en) * | 2004-11-30 | 2010-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7732349B2 (en) * | 2004-11-30 | 2010-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of insulating film and semiconductor device |
US7517791B2 (en) | 2004-11-30 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
US7985677B2 (en) * | 2004-11-30 | 2011-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7687326B2 (en) * | 2004-12-17 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US7579224B2 (en) * | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
KR101185757B1 (ko) * | 2005-06-20 | 2012-09-25 | 고에키자이단호진 고쿠사이카가쿠 신고우자이단 | 층간 절연막 및 배선 구조와 그것들의 제조 방법 |
JP5087807B2 (ja) * | 2006-02-22 | 2012-12-05 | 東京応化工業株式会社 | 有機半導体素子の製造方法及びそれに用いる絶縁膜形成用組成物 |
JP4788415B2 (ja) * | 2006-03-15 | 2011-10-05 | ソニー株式会社 | 半導体装置の製造方法 |
JP4419025B2 (ja) | 2006-09-04 | 2010-02-24 | ソニー株式会社 | 半導体装置の製造方法 |
JP5051133B2 (ja) * | 2006-09-28 | 2012-10-17 | Jsr株式会社 | レジスト下層膜形成方法及びそれに用いるレジスト下層膜用組成物並びにパターン形成方法 |
US7723226B2 (en) * | 2007-01-17 | 2010-05-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnects containing bilayer porous low-k dielectrics using different porogen to structure former ratio |
WO2008092186A1 (en) * | 2007-01-31 | 2008-08-07 | Newsouth Innovations Pty Limited | Method of forming openings in selected material |
US20080305320A1 (en) * | 2007-03-02 | 2008-12-11 | Lucien Laude | Nanoscale surface activation of silicone via laser processing |
US8852290B2 (en) * | 2007-03-02 | 2014-10-07 | Doheny Eye Institute | Biocompatible implants and methods of making and attaching the same |
EP2105959A3 (fr) * | 2008-03-28 | 2011-03-02 | STMicroelectronics (Crolles 2) SAS | Procédé de formation de niveaux d'interconnexion d'un circuit intégré |
JP2010215819A (ja) * | 2009-03-17 | 2010-09-30 | Sumitomo Bakelite Co Ltd | 膜形成用組成物、絶縁膜および半導体装置 |
KR101797253B1 (ko) * | 2009-12-04 | 2017-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
WO2011068033A1 (en) | 2009-12-04 | 2011-06-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP2012174845A (ja) * | 2011-02-21 | 2012-09-10 | Tokyo Electron Ltd | 成膜方法及び半導体装置の製造方法 |
US9613906B2 (en) * | 2014-06-23 | 2017-04-04 | GlobalFoundries, Inc. | Integrated circuits including modified liners and methods for fabricating the same |
JP6792788B2 (ja) * | 2017-03-30 | 2020-12-02 | 東京エレクトロン株式会社 | 半導体装置の製造方法 |
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JP4321686B2 (ja) | 1998-04-24 | 2009-08-26 | 旭化成株式会社 | 有機−無機複合体および多孔質ケイ素酸化物の製造方法 |
US6093636A (en) * | 1998-07-08 | 2000-07-25 | International Business Machines Corporation | Process for manufacture of integrated circuit device using a matrix comprising porous high temperature thermosets |
JP2002050687A (ja) | 2000-08-03 | 2002-02-15 | Seiko Epson Corp | 半導体装置の製造方法 |
WO2002045145A2 (en) * | 2000-11-30 | 2002-06-06 | Shipley Company, L.L.C. | Uv-free curing of organic dielectrica |
US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
JP2003031566A (ja) | 2001-07-16 | 2003-01-31 | Fujitsu Ltd | 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品 |
US6933586B2 (en) * | 2001-12-13 | 2005-08-23 | International Business Machines Corporation | Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogens |
KR100481181B1 (ko) * | 2002-11-08 | 2005-04-07 | 삼성전자주식회사 | 반도체소자의 다공성 물질막을 형성하는 방법 |
JP2004214566A (ja) * | 2003-01-08 | 2004-07-29 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
US20040197474A1 (en) * | 2003-04-01 | 2004-10-07 | Vrtis Raymond Nicholas | Method for enhancing deposition rate of chemical vapor deposition films |
US7018928B2 (en) * | 2003-09-04 | 2006-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma treatment method to reduce silicon erosion over HDI silicon regions |
JP2005142473A (ja) * | 2003-11-10 | 2005-06-02 | Semiconductor Leading Edge Technologies Inc | 半導体装置の製造方法 |
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2004
- 2004-02-26 JP JP2004051432A patent/JP4194508B2/ja not_active Expired - Lifetime
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JP2005243903A (ja) | 2005-09-08 |
US20050191847A1 (en) | 2005-09-01 |
TW200529392A (en) | 2005-09-01 |
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