EP2105959A3 - Procédé de formation de niveaux d'interconnexion d'un circuit intégré - Google Patents

Procédé de formation de niveaux d'interconnexion d'un circuit intégré Download PDF

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Publication number
EP2105959A3
EP2105959A3 EP09155772A EP09155772A EP2105959A3 EP 2105959 A3 EP2105959 A3 EP 2105959A3 EP 09155772 A EP09155772 A EP 09155772A EP 09155772 A EP09155772 A EP 09155772A EP 2105959 A3 EP2105959 A3 EP 2105959A3
Authority
EP
European Patent Office
Prior art keywords
integrated circuit
forming
interconnection levels
forming interconnection
levels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP09155772A
Other languages
German (de)
English (en)
Other versions
EP2105959A2 (fr
Inventor
Patrick Vannier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Publication of EP2105959A2 publication Critical patent/EP2105959A2/fr
Publication of EP2105959A3 publication Critical patent/EP2105959A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'invention concerne un procédé de formation de niveaux d'interconnexion d'un circuit intégré comprenant les étapes suivantes :
(a) former un niveau d'interconnexion (Ni, Ni+1....) comprenant des pistes conductrices (40, 64, 74) et des vias (65, 76), séparés par un matériau diélectrique poreux (42, 50, 78) ;
(b) former, sur le niveau d'interconnexion, une couche (46, 70, 80) en un matériau isolant non poreux, ladite couche comprenant des ouvertures (48, 72, 82) au-dessus de portions de matériau diélectrique poreux (42, 50, 78) ;
(c) répéter les étapes (a) et (b) pour obtenir le nombre adéquat de niveaux d'interconnexion ; et
(d) réaliser un recuit de la structure.
EP09155772A 2008-03-28 2009-03-20 Procédé de formation de niveaux d'interconnexion d'un circuit intégré Withdrawn EP2105959A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0852035 2008-03-28

Publications (2)

Publication Number Publication Date
EP2105959A2 EP2105959A2 (fr) 2009-09-30
EP2105959A3 true EP2105959A3 (fr) 2011-03-02

Family

ID=39967592

Family Applications (1)

Application Number Title Priority Date Filing Date
EP09155772A Withdrawn EP2105959A3 (fr) 2008-03-28 2009-03-20 Procédé de formation de niveaux d'interconnexion d'un circuit intégré

Country Status (2)

Country Link
US (2) US20090243101A1 (fr)
EP (1) EP2105959A3 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3050318B1 (fr) 2016-04-19 2018-05-11 Stmicroelectronics (Rousset) Sas Nouvelle protection contre le claquage premature de dielectriques poreux interlignes au sein d'un circuit integre
FR3066038B1 (fr) * 2017-05-05 2020-01-24 Stmicroelectronics (Crolles 2) Sas Memoire a changement de phase

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500770B1 (en) * 2002-04-22 2002-12-31 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a multi-layer protective coating over porous low-k material
US20040102031A1 (en) * 2002-11-21 2004-05-27 Kloster Grant M. Low-K dielectric structure and method
US20050191847A1 (en) * 2004-02-26 2005-09-01 Semiconductor Leading Edge Technologies, Inc. Method for manufacturing semiconductor device
US20070077782A1 (en) * 2005-09-30 2007-04-05 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6943451B2 (en) * 2001-07-02 2005-09-13 International Business Machines Corporation Semiconductor devices containing a discontinuous cap layer and methods for forming same
EP1318552A1 (fr) * 2001-12-05 2003-06-11 STMicroelectronics S.r.l. Région de contact à faible surface, élément de mémoire à changement de phase à efficience élevée et sa procédé de fabrication
US7741714B2 (en) * 2004-11-02 2010-06-22 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure with stress-buffering layer capping interconnection metal layer
US7459792B2 (en) * 2006-06-19 2008-12-02 Taiwan Semiconductor Manufacturing Co., Ltd. Via layout with via groups placed in interlocked arrangement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6500770B1 (en) * 2002-04-22 2002-12-31 Taiwan Semiconductor Manufacturing Company, Ltd Method for forming a multi-layer protective coating over porous low-k material
US20040102031A1 (en) * 2002-11-21 2004-05-27 Kloster Grant M. Low-K dielectric structure and method
US20050191847A1 (en) * 2004-02-26 2005-09-01 Semiconductor Leading Edge Technologies, Inc. Method for manufacturing semiconductor device
US20070077782A1 (en) * 2005-09-30 2007-04-05 Tokyo Electron Limited Treatment of low dielectric constant films using a batch processing system

Also Published As

Publication number Publication date
US20090243101A1 (en) 2009-10-01
EP2105959A2 (fr) 2009-09-30
US20120040525A1 (en) 2012-02-16
US8492264B2 (en) 2013-07-23

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