DE602008006376D1 - Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente - Google Patents

Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente

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Publication number
DE602008006376D1
DE602008006376D1 DE602008006376T DE602008006376T DE602008006376D1 DE 602008006376 D1 DE602008006376 D1 DE 602008006376D1 DE 602008006376 T DE602008006376 T DE 602008006376T DE 602008006376 T DE602008006376 T DE 602008006376T DE 602008006376 D1 DE602008006376 D1 DE 602008006376D1
Authority
DE
Germany
Prior art keywords
high quality
semiconductor elements
substrate
elements manufactured
limitation method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008006376T
Other languages
English (en)
Inventor
Li Wang
Fengyi Jiang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lattice Power Jiangxi Corp
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Publication of DE602008006376D1 publication Critical patent/DE602008006376D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Element Separation (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE602008006376T 2007-04-20 2008-05-06 Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente Active DE602008006376D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN200710104428A CN100580905C (zh) 2007-04-20 2007-04-20 获得在分割衬底上制造的半导体器件的高质量边界的方法
US11/776,881 US20080261403A1 (en) 2007-04-20 2007-07-12 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
PCT/CN2008/000902 WO2008128444A1 (en) 2007-04-20 2008-05-06 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Publications (1)

Publication Number Publication Date
DE602008006376D1 true DE602008006376D1 (de) 2011-06-01

Family

ID=39872642

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008006376T Active DE602008006376D1 (de) 2007-04-20 2008-05-06 Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente

Country Status (6)

Country Link
US (2) US20080261403A1 (de)
EP (1) EP2140504B1 (de)
CN (1) CN100580905C (de)
AT (1) ATE506701T1 (de)
DE (1) DE602008006376D1 (de)
WO (1) WO2008128444A1 (de)

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CN101814565A (zh) * 2010-03-02 2010-08-25 上海蓝光科技有限公司 一种发光二极管芯片的结构及其制造方法
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9450143B2 (en) 2010-06-18 2016-09-20 Soraa, Inc. Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
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US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
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US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
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Also Published As

Publication number Publication date
US8426325B2 (en) 2013-04-23
WO2008128444A1 (en) 2008-10-30
EP2140504B1 (de) 2011-04-20
EP2140504A1 (de) 2010-01-06
US20110281422A1 (en) 2011-11-17
CN101290908A (zh) 2008-10-22
EP2140504A4 (de) 2010-04-28
CN100580905C (zh) 2010-01-13
ATE506701T1 (de) 2011-05-15
US20080261403A1 (en) 2008-10-23

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