SG11201803914QA - Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer - Google Patents

Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer

Info

Publication number
SG11201803914QA
SG11201803914QA SG11201803914QA SG11201803914QA SG11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA SG 11201803914Q A SG11201803914Q A SG 11201803914QA
Authority
SG
Singapore
Prior art keywords
coating
semiconductor wafer
etching
epitaxy reactor
semiconductor
Prior art date
Application number
SG11201803914QA
Inventor
Christian Hager
Katharina May
Christof Weber
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG11201803914QA publication Critical patent/SG11201803914QA/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02293—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process formation of epitaxial layers by a deposition process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer 5 The invention relates to a method for coating semiconductor wafers (120) with in each case an epitaxially deposited layer in an epitaxy reactor (100), wherein in a coating process at least one semiconductor wafer (120) is arranged on a respective susceptor (110) in the epitaxy reactor (100) and a first deposition gas for coating the at least one semiconductor wafer (120) is conducted through the 10 epitaxy reactor (100), wherein an etching process in which a first etching gas and a carrier gas are conducted through the epitaxy reactor (100) is carried out in each case before a coating process, and wherein a cleaning process in which a second etching gas and subsequently in particular a second deposition gas are conducted through the epitaxy reactor (100) is carried out in each case after 15 a predefinable number of coating processes, wherein for two or more etching processes preceding the respective coating process at least one variable which influences the etching process is set individually to the relevant etching process, and to a semiconductor wafer. 20 Figure 1
SG11201803914QA 2015-12-17 2016-12-09 Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer SG11201803914QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102015225663.4A DE102015225663A1 (en) 2015-12-17 2015-12-17 Process for the epitaxial coating of semiconductor wafers and semiconductor wafer
PCT/EP2016/080494 WO2017102597A1 (en) 2015-12-17 2016-12-09 Method for epitaxial coating of semiconductor wafers, and semiconductor wafer

Publications (1)

Publication Number Publication Date
SG11201803914QA true SG11201803914QA (en) 2018-06-28

Family

ID=57543031

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201803914QA SG11201803914QA (en) 2015-12-17 2016-12-09 Method for Epitaxially Coating Semiconductor Wafers, and Semiconductor Wafer

Country Status (9)

Country Link
US (1) US10961638B2 (en)
EP (1) EP3390698B1 (en)
JP (1) JP6697558B2 (en)
KR (1) KR102210290B1 (en)
CN (1) CN108474133B (en)
DE (1) DE102015225663A1 (en)
SG (1) SG11201803914QA (en)
TW (1) TWI625781B (en)
WO (1) WO2017102597A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016210203B3 (en) * 2016-06-09 2017-08-31 Siltronic Ag Susceptor for holding a semiconductor wafer, method for depositing an epitaxial layer on a front side of a semiconductor wafer and semiconductor wafer with an epitaxial layer
DE102018200415A1 (en) * 2018-01-11 2019-07-11 Siltronic Ag Semiconductor wafer with epitaxial layer
CN110189991A (en) * 2019-04-30 2019-08-30 上海新昇半导体科技有限公司 A kind of manufacturing method of epitaxial wafer
CN111893567B (en) * 2020-07-03 2022-02-22 北京北方华创微电子装备有限公司 Vapor deposition chamber
JP7342815B2 (en) * 2020-07-30 2023-09-12 株式会社Sumco Method for manufacturing epitaxial silicon wafers
CN112164649A (en) * 2020-09-28 2021-01-01 长江存储科技有限责任公司 Etching method of semiconductor structure
EP4074861A1 (en) 2021-04-13 2022-10-19 Siltronic AG Method for manufacturing semiconductor wafers having an epitaxial layer deposited from the gas phase in a deposition chamber
EP4075488B1 (en) 2021-04-13 2024-02-28 Siltronic AG Method for manufacturing semiconductor wafers having an epitaxial layer deposited from the gas phase in a deposition chamber
CN115198352B (en) * 2022-08-24 2024-03-26 西安奕斯伟材料科技股份有限公司 Epitaxial growth method and epitaxial wafer

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JP3908112B2 (en) * 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Susceptor, epitaxial wafer manufacturing apparatus and epitaxial wafer manufacturing method
DE10302611B4 (en) 2003-01-23 2011-07-07 Siltronic AG, 81737 Polished semiconductor wafer and method for its production and arrangement consisting of a semiconductor wafer and a shield
US7288284B2 (en) 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
DE102005045339B4 (en) 2005-09-22 2009-04-02 Siltronic Ag Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers
DE102005045338B4 (en) * 2005-09-22 2009-04-02 Siltronic Ag Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers
US9064960B2 (en) 2007-01-31 2015-06-23 Applied Materials, Inc. Selective epitaxy process control
US20090162997A1 (en) * 2007-12-21 2009-06-25 Deacon Thomas E Thin diamond like coating for semiconductor processing equipment
JP5151674B2 (en) * 2008-05-19 2013-02-27 信越半導体株式会社 Epitaxial wafer manufacturing method
DE102009004557B4 (en) 2009-01-14 2018-03-08 Siltronic Ag Epitaxial silicon wafer and process for producing epitaxially coated silicon wafers
DE102009022224B4 (en) * 2009-05-20 2012-09-13 Siltronic Ag Process for producing epitaxial silicon wafers
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JP5644401B2 (en) 2010-11-15 2014-12-24 株式会社Sumco Epitaxial wafer manufacturing method and epitaxial wafer
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DE102015205719B4 (en) 2015-03-30 2022-08-18 Siltronic Ag Process for coating semiconductor wafers

Also Published As

Publication number Publication date
DE102015225663A1 (en) 2017-06-22
JP2019504486A (en) 2019-02-14
US10961638B2 (en) 2021-03-30
CN108474133A (en) 2018-08-31
KR102210290B1 (en) 2021-02-01
CN108474133B (en) 2022-01-14
US20180363165A1 (en) 2018-12-20
EP3390698A1 (en) 2018-10-24
TWI625781B (en) 2018-06-01
JP6697558B2 (en) 2020-05-20
EP3390698B1 (en) 2021-02-03
KR20180087392A (en) 2018-08-01
WO2017102597A1 (en) 2017-06-22
TW201724248A (en) 2017-07-01

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