ATE506701T1 - Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente - Google Patents

Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente

Info

Publication number
ATE506701T1
ATE506701T1 AT08748460T AT08748460T ATE506701T1 AT E506701 T1 ATE506701 T1 AT E506701T1 AT 08748460 T AT08748460 T AT 08748460T AT 08748460 T AT08748460 T AT 08748460T AT E506701 T1 ATE506701 T1 AT E506701T1
Authority
AT
Austria
Prior art keywords
semiconductor devices
devices produced
divided substrate
substrate
partitioned
Prior art date
Application number
AT08748460T
Other languages
English (en)
Inventor
Li Wang
Fengyi Jiang
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Application granted granted Critical
Publication of ATE506701T1 publication Critical patent/ATE506701T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/327—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIBVI compounds, e.g. ZnCdSe-laser
AT08748460T 2007-04-20 2008-05-06 Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente ATE506701T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN200710104428A CN100580905C (zh) 2007-04-20 2007-04-20 获得在分割衬底上制造的半导体器件的高质量边界的方法
US11/776,881 US20080261403A1 (en) 2007-04-20 2007-07-12 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate
PCT/CN2008/000902 WO2008128444A1 (en) 2007-04-20 2008-05-06 Method for obtaining high-quality boundary for semiconductor devices fabricated on a partitioned substrate

Publications (1)

Publication Number Publication Date
ATE506701T1 true ATE506701T1 (de) 2011-05-15

Family

ID=39872642

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08748460T ATE506701T1 (de) 2007-04-20 2008-05-06 Verfahren für hochqualitative begrenzung für auf einem unterteilten substrat hergestellte halbleiterbauelemente

Country Status (6)

Country Link
US (2) US20080261403A1 (de)
EP (1) EP2140504B1 (de)
CN (1) CN100580905C (de)
AT (1) ATE506701T1 (de)
DE (1) DE602008006376D1 (de)
WO (1) WO2008128444A1 (de)

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Also Published As

Publication number Publication date
CN100580905C (zh) 2010-01-13
EP2140504A4 (de) 2010-04-28
US8426325B2 (en) 2013-04-23
DE602008006376D1 (de) 2011-06-01
EP2140504B1 (de) 2011-04-20
WO2008128444A1 (en) 2008-10-30
CN101290908A (zh) 2008-10-22
US20080261403A1 (en) 2008-10-23
US20110281422A1 (en) 2011-11-17
EP2140504A1 (de) 2010-01-06

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