JP5378921B2 - 気密封止用キャップの製造方法 - Google Patents
気密封止用キャップの製造方法 Download PDFInfo
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- JP5378921B2 JP5378921B2 JP2009214707A JP2009214707A JP5378921B2 JP 5378921 B2 JP5378921 B2 JP 5378921B2 JP 2009214707 A JP2009214707 A JP 2009214707A JP 2009214707 A JP2009214707 A JP 2009214707A JP 5378921 B2 JP5378921 B2 JP 5378921B2
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- plating layer
- hermetic sealing
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- 238000007789 sealing Methods 0.000 title claims abstract description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 17
- 238000007747 plating Methods 0.000 claims abstract description 129
- 229910000679 solder Inorganic materials 0.000 claims abstract description 103
- 239000000463 material Substances 0.000 claims abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 68
- 238000003860 storage Methods 0.000 claims description 54
- 239000010931 gold Substances 0.000 claims description 44
- 239000003566 sealing material Substances 0.000 claims description 44
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 42
- 229910052737 gold Inorganic materials 0.000 claims description 42
- 229910052759 nickel Inorganic materials 0.000 claims description 34
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910017709 Ni Co Inorganic materials 0.000 claims 1
- 229910003267 Ni-Co Inorganic materials 0.000 claims 1
- 229910003262 Ni‐Co Inorganic materials 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 6
- 239000000565 sealant Substances 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 186
- 239000000919 ceramic Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 22
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 229910015363 Au—Sn Inorganic materials 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910000531 Co alloy Inorganic materials 0.000 description 2
- 238000005219 brazing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 241000287463 Phalacrocorax Species 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- SFOSJWNBROHOFJ-UHFFFAOYSA-N cobalt gold Chemical compound [Co].[Au] SFOSJWNBROHOFJ-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical group [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1617—Cavity coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/924—Active solid-state devices, e.g. transistors, solid-state diodes with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
図1を参照して、この本発明の参考例による電子部品収納用パッケージでは、アルミナなどの絶縁性材料からなるセラミック基板1の表面の所定領域上に、収納空間を構成するように、アルミナなどの絶縁性材料からなるセラミック枠体2が形成されている。また、セラミック枠体2によって囲まれた収納空間内に位置するセラミック基板1上には、バンプ4を介して水晶振動子などの電子部品5が取り付けられている。また、セラミック枠体2上には、金−錫半田(たとえば、20Au−Sn半田)からなる半田層3を介して、気密封止用キャップ部材11が接合されている。この気密封止用キャップ部材11は、Fe−Ni−Co(鉄−ニッケル−コバルト)合金からなる。
図5を参照して、この本発明の一実施形態では、キャビティ部(凹部)を有する気密封止用キャップに本発明を適用した場合の例について説明する。
32 半田層(封止材)
41 気密封止用キャップ部材
41a フランジ部
41b 封止側内面コーナ部
42 ニッケルメッキ層(第1メッキ層)
43 金メッキ層(第2メッキ層)
60 キャビティ部(凹部)
Claims (7)
- 電子部品を収納するための電子部品収納用パッケージに用いられる気密封止用キャップの製造方法であって、
板状の気密封止用キャップ部材にフランジ部が形成されないように、凹部を形成する第1絞り工程と、
前記凹部の両端部をコイニング加工することによって、前記凹部の両端部に前記フランジ部を形成するとともに、前記フランジ部の封止側内面コーナ部の曲率半径を0mmよりも大きく、かつ、0.1mm以下にする第2絞り工程とを備えた、気密封止用キャップの製造方法。 - 前記フランジ部を形成した前記気密封止用キャップ部材の表面の全面に、第1メッキ層と、前記第1メッキ層よりも前記封止材に対するぬれ性が良好な材料を含む第2メッキ層とを形成する工程と、
前記第2メッキ層のうち、前記封止材が配置される領域以外の領域に位置する部分を除去する工程とをさらに備えた、請求項1に記載の気密封止用キャップの製造方法。 - 前記フランジ部を形成した前記気密封止用キャップ部材の表面の全面に、第1メッキ層を形成する工程と、
前記気密封止用キャップ部材の前記封止材が配置される領域に、前記第1メッキ層よりも前記封止材に対するぬれ性が良好な材料を含む第2メッキ層を形成する工程とをさらに備えた、請求項1に記載の気密封止用キャップの製造方法。 - 前記第1メッキ層は、ニッケルメッキ層であり、
前記第2メッキ層は、金メッキ層である、請求項2または3に記載の気密封止用キャップの製造方法。 - 前記封止材は、金−錫半田を含む、請求項2〜4のいずれか1項に記載の気密封止用キャップ。
- 前記気密封止用キャップ部材は、Fe−Ni−Co合金からなる、請求項1〜5のいずれか1項に記載の気密封止用キャップ。
- 電子部品を収納するための電子部品収納用パッケージに用いられる気密封止用キャップの製造方法であって、
板状の気密封止用キャップ部材にフランジ部が形成されないように、凹部を形成する第1絞り工程と、
前記凹部の両端部をコイニング加工することによって、前記凹部の両端部に前記フランジ部を形成するとともに、前記フランジ部の封止側内面コーナ部をつぶすようにコイニング加工することにより前記フランジ部の封止側内面コーナ部を直角にする第2絞り工程とを備えた、気密封止用キャップの製造方法。
Priority Applications (1)
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JP2009214707A JP5378921B2 (ja) | 2003-02-06 | 2009-09-16 | 気密封止用キャップの製造方法 |
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JP2003029131 | 2003-02-06 | ||
JP2003029131 | 2003-02-06 | ||
JP2009214707A JP5378921B2 (ja) | 2003-02-06 | 2009-09-16 | 気密封止用キャップの製造方法 |
Related Parent Applications (1)
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JP2005504815A Division JPWO2004070836A1 (ja) | 2003-02-06 | 2004-02-02 | 気密封止用キャップおよびその製造方法 |
Publications (2)
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JP2010021563A JP2010021563A (ja) | 2010-01-28 |
JP5378921B2 true JP5378921B2 (ja) | 2013-12-25 |
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JP2005504815A Pending JPWO2004070836A1 (ja) | 2003-02-06 | 2004-02-02 | 気密封止用キャップおよびその製造方法 |
JP2009214707A Expired - Lifetime JP5378921B2 (ja) | 2003-02-06 | 2009-09-16 | 気密封止用キャップの製造方法 |
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JP2005504815A Pending JPWO2004070836A1 (ja) | 2003-02-06 | 2004-02-02 | 気密封止用キャップおよびその製造方法 |
Country Status (5)
Country | Link |
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US (1) | US7173331B2 (ja) |
JP (2) | JPWO2004070836A1 (ja) |
KR (1) | KR101117049B1 (ja) |
CN (1) | CN100365803C (ja) |
WO (1) | WO2004070836A1 (ja) |
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JP2962924B2 (ja) | 1992-03-30 | 1999-10-12 | 京セラ株式会社 | 電子部品収納用パッケージ |
US5578869A (en) * | 1994-03-29 | 1996-11-26 | Olin Corporation | Components for housing an integrated circuit device |
JP3432988B2 (ja) * | 1996-01-18 | 2003-08-04 | 日本特殊陶業株式会社 | 電子部品パッケージ用金属製リッド基板、及び金属製リッドの製造方法 |
JPH11312758A (ja) | 1998-02-27 | 1999-11-09 | Sumitomo Special Metals Co Ltd | はんだバンプシート製造方法およびicパッケージ部品製造方法 |
US6229404B1 (en) * | 1998-08-31 | 2001-05-08 | Kyocera Corporation | Crystal oscillator |
JP2000133734A (ja) * | 1998-10-27 | 2000-05-12 | Tanaka Kikinzoku Kogyo Kk | クラッドリングの製造方法、封止キャップ及びその製造方法 |
JP2000150687A (ja) | 1998-11-18 | 2000-05-30 | Matsushita Electric Ind Co Ltd | 電子部品とその製造方法 |
DE10039646A1 (de) * | 1999-08-18 | 2001-03-08 | Murata Manufacturing Co | Leitende Abdeckung, Elektronisches Bauelement und Verfahren zur Bildung einer isolierenden Schicht der leitenden Abdeckung |
KR100443399B1 (ko) * | 2001-10-25 | 2004-08-09 | 삼성전자주식회사 | 보이드가 형성된 열 매개 물질을 갖는 반도체 패키지 |
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2004
- 2004-02-02 JP JP2005504815A patent/JPWO2004070836A1/ja active Pending
- 2004-02-02 WO PCT/JP2004/000996 patent/WO2004070836A1/ja active Application Filing
- 2004-02-02 CN CNB2004800000491A patent/CN100365803C/zh not_active Expired - Lifetime
- 2004-02-02 KR KR1020047012544A patent/KR101117049B1/ko active IP Right Grant
- 2004-08-26 US US10/926,102 patent/US7173331B2/en active Active
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Publication number | Publication date |
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US20050023661A1 (en) | 2005-02-03 |
JP2010021563A (ja) | 2010-01-28 |
KR101117049B1 (ko) | 2012-03-15 |
US7173331B2 (en) | 2007-02-06 |
KR20050092339A (ko) | 2005-09-21 |
CN1698195A (zh) | 2005-11-16 |
WO2004070836A1 (ja) | 2004-08-19 |
CN100365803C (zh) | 2008-01-30 |
JPWO2004070836A1 (ja) | 2006-06-01 |
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