WO2004070836A1 - 気密封止用キャップおよびその製造方法 - Google Patents
気密封止用キャップおよびその製造方法 Download PDFInfo
- Publication number
- WO2004070836A1 WO2004070836A1 PCT/JP2004/000996 JP2004000996W WO2004070836A1 WO 2004070836 A1 WO2004070836 A1 WO 2004070836A1 JP 2004000996 W JP2004000996 W JP 2004000996W WO 2004070836 A1 WO2004070836 A1 WO 2004070836A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sealing cap
- hermetic sealing
- plating layer
- cap member
- hermetic
- Prior art date
Links
- 238000007789 sealing Methods 0.000 title claims abstract description 214
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- 238000007747 plating Methods 0.000 claims abstract description 158
- 229910000679 solder Inorganic materials 0.000 claims abstract description 107
- 239000003566 sealing material Substances 0.000 claims abstract description 84
- 239000000463 material Substances 0.000 claims abstract description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 74
- 239000010931 gold Substances 0.000 claims description 47
- 239000000919 ceramic Substances 0.000 claims description 44
- 229910052737 gold Inorganic materials 0.000 claims description 43
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 42
- 229910052759 nickel Inorganic materials 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 30
- 238000003860 storage Methods 0.000 claims description 27
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 21
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 239000000956 alloy Substances 0.000 claims description 9
- 229910000531 Co alloy Inorganic materials 0.000 claims description 4
- HQIPIFUXWHMQQW-UHFFFAOYSA-N [Sn].[Sn].[Au] Chemical compound [Sn].[Sn].[Au] HQIPIFUXWHMQQW-UHFFFAOYSA-N 0.000 claims description 3
- 229910017709 Ni Co Inorganic materials 0.000 claims 3
- 229910003267 Ni-Co Inorganic materials 0.000 claims 3
- 229910003262 Ni‐Co Inorganic materials 0.000 claims 3
- 230000006866 deterioration Effects 0.000 abstract description 9
- 239000010410 layer Substances 0.000 description 206
- 229910015363 Au—Sn Inorganic materials 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020836 Sn-Ag Inorganic materials 0.000 description 1
- 229910020888 Sn-Cu Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910020988 Sn—Ag Inorganic materials 0.000 description 1
- 229910019204 Sn—Cu Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- SFOSJWNBROHOFJ-UHFFFAOYSA-N cobalt gold Chemical compound [Co].[Au] SFOSJWNBROHOFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 150000002343 gold Chemical class 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
- H01L2924/1617—Cavity coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/163—Connection portion, e.g. seal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/924—Active solid-state devices, e.g. transistors, solid-state diodes with passive device, e.g. capacitor, or battery, as integral part of housing or housing element, e.g. cap
Definitions
- the present invention relates to a hermetic sealing cap and a method of manufacturing the same, and more particularly to a hermetic sealing cap used for an electronic component storage package for storing an electronic component and a method of manufacturing the same.
- an SMD (Surface Mount Device) package (Surface Mount Device) used for hermetic sealing of electronic components such as SAW filters (surface acoustic wave filters) used for removing noise from mobile phones and quartz oscillators.
- SAW filters surface acoustic wave filters
- packages for storing electronic components such as packages are known.
- This electronic component storage package is disclosed, for example, in Japanese Patent Application Laid-Open No. 2000-150687.
- a hermetic sealing cap is used.
- FIG. 17 is a cross-sectional view showing the entire configuration of an electronic component storage package for storing electronic components according to a conventional example.
- an insulating ceramic frame 102 is formed on an end surface of an insulating ceramic substrate 101 so as to form a housing space.
- An electronic component 105 such as a quartz oscillator is mounted on a ceramic substrate 101 located in a storage space surrounded by a ceramic frame 102 via a bump 104.
- a hermetic sealing cap member 111 is bonded on the ceramic frame 102 via a solder layer 103 as a sealing material.
- a nickel plating layer 112 is formed so as to cover the entire surface of the hermetic sealing cap member 111. Further, a gold plating layer 113 is formed so as to cover the entire surface of the nickel plating layer 112. The gold plating layer 113 is provided to improve the bonding property with the solder layer 103 made of gold-tin solder. The layer 112 is provided as a base plating layer of the gold plating layer 113.
- a hermetic sealing cap member 111 made of a plate-like iron-nickel-cobalt (Fe-Ni-Co) alloy is formed by press working. Then, after forming a nickel plating layer 112 as a base plating layer on the entire surface of the hermetic sealing cap member 111, a gold plating layer 113 is formed so as to cover the entire surface of the nickel plating layer 112. Form.
- the conventional electronic component storage package shown in FIG. 17 has a two-layer structure of the ceramic substrate 101 and the ceramic frame 102 on the substrate side, and thus the number of components increases. There was.
- FIG. 20 is a cross-sectional view showing another conventional electronic component housing package.
- the substrate side is formed of a single-layer insulating ceramic substrate 131.
- an electronic component 134 such as a crystal oscillator is mounted on a predetermined region on the ceramic substrate 131 via a bump 133.
- an airtight having a cavity is provided via a solder layer 132 made of gold-tin (Au-Sn) solder so as to seal the ceramic substrate 13 1.
- a sealing cap member 141 is attached.
- a nickel plating layer 142 as a base plating layer is formed so as to cover the entire surface of the hermetic sealing cap member 141.
- a gold plating layer 144 is formed so as to cover the entire surface of the nickel plating layer 144. .
- the manufacturing process of the electronic component storage package according to another example of the conventional example shown in FIG. 20 is as follows. First, in the first drawing step shown in FIG. 21, the flange portion 14 la and the cavity portion (recess) 16 are formed. A schematic structure of the hermetic sealing cap member 141 having 0 is formed. Then, by performing the second drawing process shown in FIG. 22 and the third drawing process shown in FIG. 23, the flange portion 141 a having the flat portion 141 c as shown in FIG. 23 is obtained. Is formed.
- a nickel plating layer 142 as a base plating layer is formed so as to cover the entire surface of the hermetic sealing cap member 141.
- a gold plating layer 144 is formed so as to cover the entire surface of the nickel plating layer 144.
- a solder layer 13 2 made of gold-tin solder is temporarily provided on the gold plating layer 144 corresponding to the flange portion 141 a of the hermetic sealing cap member 141. Braze.
- the hermetic sealing cap member 14 1 is connected to the upper surface of the ceramic substrate 13 1 on which the electronic component 13 4 is mounted via the bump 13 3
- the temporarily brazed solder layer 1 32 is arranged.
- the hermetic sealing cap member 141 is joined to the upper surface of the ceramic substrate 1331 by melting the solder layer 132. In this way, the electronic component housing package according to another conventional example shown in FIG. 20 is formed.
- a nickel plating layer 112 serving as a base plating layer is provided on the entire surface of the hermetic sealing cap member 111.
- a gold plating layer 113 is formed. Since this gold plated layer 113 has good wettability with the solder layer 103 made of gold-tin solder, it is shown in FIG.
- the solder layer 103 flows into the side where the electronic component 105 is housed.
- the solder layer 103 flows into the inner side in this way, the flowed solder layer 103 scatters to the electronic component 105 side, and the electronic component 105 and the solder layer 103 come into contact with each other. There was a case. In that case, there is a problem that the element characteristics of the electronic component 105 are deteriorated.
- the hermetic sealing cap member 141 having a cavity portion according to another conventional example shown in FIG. 20 also has a gold plating layer on the entire surface via a nickel plating layer 144 as a base plating layer.
- the solder layer 1 3 2 crawls up on the inner surface of the hermetic sealing cap member 14 1.
- the crawled solder layer 13 2 scatters to the electronic component 13 4 side and the solder layer 13
- the element characteristics of the electronic component 134 are deteriorated.
- the hermetic sealing cap member 141 having a cavity portion employs a conventional general drawing process shown in FIGS. 21 to 23. Since the flange portion 141a is formed, the sealing-side inner surface portion 141b of the flange portion 141a has a rounded shape. In other words, since the radius of curvature of the inner side corner portion 141b of the sealing portion of the flange portion 141a increases, the length of the flat portion 141c of the flange portion 141a becomes shorter. there were. When the length of the flat portion 141c of the flange portion 141a is reduced, the length of the sealing surface is reduced, so that there is a problem that the sealing property is deteriorated.
- One object of the present invention is to provide a hermetic sealing key capable of suppressing the deterioration of the characteristics of an electronic component due to the contact of the sealing material such as solder with the electronic component in the package. Is to provide a cap.
- Another object of the present invention is to provide a hermetic sealing cap capable of improving the sealing performance and reducing the size.
- Still another object of the present invention is to easily manufacture a hermetic sealing cap capable of suppressing the deterioration of the characteristics of electronic components due to the contact of the sealing material with the electronic components in the package.
- An object of the present invention is to provide a method for producing a hermetic sealing cap to be obtained.
- Still another object of the present invention is to provide a method for manufacturing a hermetic sealing cap capable of easily manufacturing a hermetic sealing cap capable of improving the sealing performance and achieving downsizing. It is to provide.
- a hermetic sealing cap is a hermetic sealing cap used for an electronic component housing package for housing an electronic component, comprising: a hermetic sealing cap member; A first plating layer formed in a region other than the region where the sealing material of the stopper cap member is formed, and a first plating layer formed in a region where the sealing material of the hermetic sealing cap member is disposed; Also includes a second plating layer containing a material having good wettability with the sealing material.
- the first plating layer is provided at least in a region other than the region where the sealing material of the hermetic sealing cap member is formed, and the hermetic sealing is performed.
- Airtight sealing cap by providing a second plating layer including a material having better wettability with the sealing material than the first plating layer in a region where the sealing material of the sealing cap member is arranged.
- the sealing material such as solder has a wettability lower than that of the second plating layer disposed in a region other than the region where the sealing material is disposed. Since it is difficult for the sealing material to flow into the package, it is possible to suppress the sealing material from flowing into the package.
- the receiving package includes a ceramic substrate and a ceramic frame formed so as to form a receiving space on a predetermined region of the surface of the ceramic substrate, and a sealing material is provided on the surface of the ceramic frame via a sealing material.
- a hermetic sealing cap member is attached. With this configuration, in a structure in which the hermetic sealing cap member is attached to the ceramic frame, it is possible to easily prevent the sealing material from flowing into the package.
- the hermetic sealing cap member includes a concave portion, and flange portions provided at both ends of the concave portion, and a sealing-side inner surface corner of the flange portion.
- the radius of curvature of the part is 0.1 mm or less.
- the length of the sealing surface (flat portion) of the flange portion is increased, so that the sealing performance can be improved.
- the conventional sealing-side inner surface corner has the same flat portion (sealing surface) length as the flange portion having a large radius of curvature, and has a small radius of curvature of 0.1 mm or less according to the present invention.
- the electronic component storage package includes a ceramic substrate, and a hermetic sealing cap member having a concave portion is mounted on the surface of the ceramic substrate via a sealing material.
- the first plating layer is a nickel plating layer
- the second plating layer is a gold plating layer.
- the first plating layer may have a greater thickness than the second plating layer.
- the sealing material includes gold-tin solder.
- the gold plating layer has good wettability,
- a sealing material having poor wettability with respect to the nickel plating layer can be easily obtained.
- the hermetic sealing cap member may be made of an Fe—Ni—Co alloy.
- the hermetic sealing cap according to the second aspect of the present invention is a hermetic sealing cap used for an electronic component housing package for housing an electronic component, the cap being provided at both ends of the recess. And a radius of curvature of the inner corner portion on the sealing side of the flange portion is 0.1 mm or less.
- the radius of curvature of the inner corner portion on the sealing side of the flange portion is set to 0.1 mm or less, whereby the sealing surface (flat portion) of the flange portion is formed. ),
- the sealing property can be improved.
- a seal having a small radius of curvature of 0.1 mm or less according to the present invention having the same flat portion (sealing surface) length as the conventional flange portion having a large radius of curvature at the inner corner portion on the sealing side.
- the content of the concave portion can be made larger than before.
- the outer dimensions of the hermetic sealing cap member can be made smaller than before, so that the package can be downsized.
- the hermetic sealing cap may be made of a Fe—Ni—Co alloy.
- a method for manufacturing a hermetic sealing cap is a method for manufacturing a hermetic sealing cap used for an electronic component storage package for storing electronic components, comprising: A step of forming a cap member, and substantially the entire surface of the hermetic sealing cap member includes a first plating layer, and a first plating layer containing a material having better wettability to the sealing material than the first plating layer. A step of forming a second plating layer; and a step of removing a portion of the second plating layer located in a region other than the region where the sealing material is arranged.
- substantially the entire surface of the hermetic sealing cap member is sealed more than the first plating layer and the first plating layer.
- a second plating layer containing a material having good wettability to the material By removing a portion of the second plating layer located in a region other than the region where the sealing material is disposed, the second plating layer is disposed in a region where the sealing material of the hermetic sealing cap member is disposed.
- the sealing material flows into the first plating layer having poor wettability, which is disposed in a region other than the region where the sealing material is disposed.
- This makes it difficult to prevent the sealing material from flowing into the package.
- it is possible to prevent the disadvantage that the sealing material comes into contact with the electronic components in the package due to the flow of the sealing material into the package.
- it is possible to suppress the deterioration of the characteristics of the electronic component due to the contact of the sealing material with the electronic component in the package.
- the flow of the sealing material to a region other than the sealing surface is suppressed, the amount of the sealing material can be reduced.
- a method for manufacturing a hermetic sealing cap is a method for manufacturing a hermetic sealing cap used for an electronic component storage package for storing electronic components, the method comprising: A step of forming a cap member; a step of forming a first plating layer over substantially the entire surface of the hermetic sealing cap member; and a region where the sealing material of the hermetic sealing cap member is arranged. Forming a second plating layer containing a material having better wettability to the sealing material than the first plating layer.
- the first plating layer is formed on substantially the entire surface of the hermetic sealing cap member, and then the hermetic sealing cap is formed.
- a second plating layer containing a material having better wettability with respect to the sealing material than the first plating layer in a region where the sealing material of the member is disposed, the sealing material of the cap member for hermetic sealing is prevented.
- the second plating layer having good wettability can be formed in a region where the second plating layer is formed in the region other than the region where the second plating layer of the hermetic sealing cap member is formed.
- the first plating layer including a material having poor wettability to the sealing material can be formed.
- the sealing material when the hermetic sealing cap is sealed with the sealing material, the sealing material is disposed in a region other than the region where the sealing material is disposed, and the first plating layer side including the material having poor wettability is disposed. Because it is difficult to flow into It is possible to prevent the stopper from flowing into the package. For this reason, it is possible to prevent the disadvantage that the sealing material comes into contact with the electronic components in the package due to the flow of the sealing material into the package. As a result, it is possible to suppress the deterioration of the characteristics of the electronic component due to the contact of the sealing material with the electronic component in the package. In addition, since the flow of the sealing material to a region other than the sealing surface is suppressed, the amount of the sealing material can be reduced.
- the step of forming the hermetic sealing cap member includes the step of forming a flange portion on the plate-shaped hermetic sealing cap member.
- the sealing-side inner surface corner having a small radius of curvature of lmm or less has the same flat portion (sealing surface) length as the flange portion having the conventional sealing-side inner surface corner having a large radius of curvature.
- the inner volume of the concave portion can be made larger than before.
- the outer dimensions of the hermetic sealing cap member can be made smaller than in the conventional case, so that the package can be downsized.
- the first plating layer is a nickel plating layer
- the second plating layer is a gold plating layer.
- the sealing material includes gold-tin tin solder.
- the hermetic sealing cap member may be made of an Fe—Ni—Co alloy.
- a method for manufacturing a hermetic sealing cap is a method for manufacturing a hermetic sealing cap used for an electronic component storage package for storing electronic components, comprising: A first drawing step of forming a concave portion so that a flange portion is not formed in the hermetic sealing cap member, and a coining process at both ends of the concave portion to form flange portions at both ends of the concave portion and a flange portion. And a second drawing step of reducing the radius of curvature of the inner corner portion on the sealing side to 0.1 mm or less.
- the first and second drawing steps as described above facilitate the hermetic sealing having a flange portion having a long sealing surface. Since the cap member for stopping can be formed, the sealing property can be improved.
- the sealing-side inner surface having a small radius of curvature of 1 mm or less according to the present invention having the same flat portion (sealing surface) as the flange portion having a shape in which the conventional sealing-side inner surface corner has a large radius of curvature.
- the inner volume of the concave portion can be made larger than before.
- the hermetic sealing cap member when storing the same electronic components as before, the outer dimensions of the hermetic sealing cap member can be made smaller than before, so that the size of the package can be reduced.
- the hermetic sealing cap may be made of an Fe—Ni—Co alloy.
- FIG. 1 is a cross-sectional view showing an overall configuration of an electronic component housing package according to a first embodiment of the present invention.
- FIG. 2 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to the first embodiment shown in FIG.
- FIG. 3 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to the first embodiment shown in FIG.
- FIG. 4 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to the first embodiment shown in FIG.
- FIG. 5 is a cross-sectional view showing the overall configuration of the electronic component housing package according to the second embodiment of the present invention.
- FIG. 6 is a cross-sectional view for explaining an example of a manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 7 is a cross-sectional view for explaining an example of a manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 8 is a cross-sectional view for explaining an example of a manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 9 is a cross-sectional view illustrating an example of a manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 10 is a cross-sectional view for explaining an example of a manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 11 is a cross-sectional view for explaining an example of the manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 12 is a cross-sectional view for explaining an example of a manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 13 is a cross-sectional view for explaining another example of the manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 14 is a cross-sectional view for explaining another example of the manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 15 is a cross-sectional view for explaining another example of the manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 16 is a cross-sectional view for explaining another example of the manufacturing process of the electronic component housing package according to the second embodiment shown in FIG.
- FIG. 17 is a cross-sectional view showing the overall configuration of an electronic component storage package according to a conventional example.
- FIG. 18 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to the conventional example shown in FIG.
- Fig. 19 shows the manufacturing of the electronic component storage package according to the conventional example shown in Fig. 17. It is sectional drawing for demonstrating a process.
- FIG. 20 is a cross-sectional view showing the overall configuration of another conventional electronic component storage package.
- FIG. 21 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to another example of the related art shown in FIG.
- FIG. 22 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to another example of the related art shown in FIG.
- FIG. 23 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to another example of the related art shown in FIG.
- FIG. 24 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to another example of the related art shown in FIG.
- FIG. 25 is a cross-sectional view for explaining a manufacturing process of the electronic component housing package according to another example of the related art shown in FIG.
- FIG. 26 is a cross-sectional view for explaining a problem of the electronic component housing package according to the conventional example shown in FIG.
- FIG. 27 is a cross-sectional view for explaining a problem of the electronic component housing package according to another conventional example shown in FIG. BEST MODE FOR CARRYING OUT THE INVENTION
- alumina or the like is formed on a predetermined region of the surface of a ceramic substrate 1 made of an insulating material such as alumina so as to form a housing space.
- a ceramic frame 2 made of an insulating material is formed.
- An electronic component 5 such as a crystal oscillator is mounted via a bump 4 on a ceramic substrate 1 located in a storage space surrounded by a ceramic frame 2.
- a hermetic sealing cap member 11 is joined to the ceramic frame 2 via a solder layer 3 made of gold-tin solder (for example, 2 OAu-Sn solder). This hermetic sealing cap member 11 is made of Fe—Ni—Co (iron Nickel-cobalt) alloy.
- the nickel plating layer 12 is formed with a thickness of about 2 / im so as to cover the entire surface of the hermetic sealing cap member 11.
- a gold plating layer 13 having a thickness of about 0.05 m is formed only on a region where the solder layer 3 is disposed on the surface of the nickel plating layer 12.
- the gold plating layer 13 has good wettability with the solder layer 3 made of gold-tin solder, and the nickel plating layer 12 has a solder layer made of gold-tin solder compared to the gold plating layer 13. Poor wettability with 3.
- the nickel plating layer 12 is an example of the “first plating layer” of the present invention
- the gold plating layer 13 is an example of the “second plating layer” of the present invention
- the solder layer 3 is an example of the “sealing material” of the present invention.
- Another example of the first plating layer is nickel lurin plating.
- Other examples of the second plating layer include gold-cobalt plating and gold-nickel plating.
- Other examples of the sealing material include lead-free solder such as Sn—Ag, Sn—Cu, and Sn—Ag—Cu, and Sn—Pb solder.
- the plating layer may be formed by an electrolytic plating method or an electroless plating method.
- an air-tight sealing cap member 11 made of an iron-nickel-cobalt alloy is formed by stamping out a plate-shaped coil made of an iron-nickel-cobalt alloy by press working.
- a nickel plating layer having a thickness of about 2 m is formed on the entire surface of the hermetic sealing cap member 11.
- a gold plating layer 13 having a thickness of about 0.05 m is formed so as to cover the entire surface of the nickel plating layer 12.
- a solder layer 3 made of gold-tin solder (for example, 20 Au-Sn solder) is arranged in a predetermined region on the surface of the gold plating layer 13. Thereafter, the solder layer 3 is temporarily brazed to the hermetic sealing cap member 11 at about 280 ° C. or higher. Thereafter, using the solder layer 3 as a mask, the Au plating layer 13 located in a region other than the region where the solder layer 3 is formed is removed using an Au stripping solution. As a result, a shape as shown in FIG. 4 is obtained.
- the hermetic sealing key according to the first embodiment is provided. Yap is obtained.
- the hermetic sealing cap member 11 is contacted via the bumps 4 with the upper surface of the ceramic frame 2 on the ceramic substrate 1 on which the electronic component 5 is mounted.
- the temporarily soldered solder layer 3 is arranged.
- the hermetic sealing cap member 11 is joined to the upper surface of the ceramic frame 2 by melting the solder layer 3 at a temperature of about 280 ° C. or higher. In this way, the electronic component housing package according to the first embodiment shown in FIG. 1 is formed.
- the gold-plated layer 13 having good wettability with the solder layer 3 is formed in the region of the hermetic sealing cap member 11 where the solder layer 3 made of gold-tin solder is arranged. And in a region other than the region where the solder layer 3 is arranged, the nickel plating layer 12 having a lower wettability with the solder layer 3 than the gold plating layer 13 is formed so as to be exposed on the surface.
- the solder layer 3 is placed on the nickel plating layer 12, which is less wettable than the gold plating layer 13. Becomes difficult to flow.
- the flow of the solder layer 3 into the package can be suppressed, so that the solder layer 3 comes into contact with the electronic component 5 in the package due to the flow of the solder layer 3 into the package. Can be suppressed from occurring. As a result, the deterioration of the characteristics of the electronic component 5 due to the contact of the solder layer 3 with the electronic component 5 in the package can be suppressed.
- the flow of the solder layer 3 to the region other than the sealing surface is suppressed, so that the amount of the solder layer 3 can be reduced.
- a gold-tin solder for example, 20 Au—Sn solder
- a ceramic substrate 31 made of an insulating material such as alumina.
- An airtight sealing cap member 41 having a cavity portion is joined via a solder layer 32 made of.
- Electronic components 34, such as crystal units, are mounted on the surface of the ceramic substrate 31 in the package via bumps 33. Has been.
- a nickel plating layer 42 having a thickness of about 2 is formed on the entire surface of the hermetic sealing cap member 41 having the cavity portion.
- a gold plating layer 43 having a thickness of about 0.05 zm is formed in a region of the surface of the nickel plating layer 42 where the solder layer 32 is disposed.
- the gold plating layer 43 has good wettability with the solder layer 32 made of gold-tin solder, and the nickel plating layer 42 has a better solderability made of gold-tin solder than the gold plating layer 43. Poor wettability with layer 32.
- the nickel plating layer 42 is an example of the “first plating layer” of the present invention
- the gold plating layer 43 is an example of the “second plating layer” of the present invention
- the solder layer 32 is an example of the “sealing material” of the present invention.
- the sealing-side inner surface corner portion 41 b of the flange portion 41 a of the hermetic sealing cap member 41 is larger than about 0 mm and about 0.1 mm or less. It is formed to have a very small radius of curvature.
- the gold plating layer 43 is formed in the region of the hermetic sealing cap member 41 where the solder layer 32 made of gold-tin solder is arranged, and the other region is formed.
- the hermetic sealing cap member 4 1 is formed using a solder layer 3 2 made of gold-tin solder. At the time of sealing, the solder layer 32 made of gold-tin solder is less likely to flow into the nickel plating layer 42 having poor wettability.
- the solder layer 32 can be prevented from flowing into the package, so that the solder layer 32 contacts the electronic components 34 in the package due to the solder layer 32 flowing into the package. Can be prevented from occurring. As a result, deterioration of the characteristics of the electronic component 34 due to the contact of the solder layer 32 with the electronic component 34 in the package can be suppressed.
- the solder layer 32 can be prevented from flowing out to a region other than the sealing surface, the amount of the solder layer 32 can be reduced. .
- the radius of curvature of the sealing-side inner surface corner portion 41 b of the flange portion 41 a of the hermetic sealing cap member 41 is larger than 0 mm and about 0.1.
- the flat portion (sealing surface) 41 c of the flange portion 41 a becomes longer than the conventional structure shown in FIG. 20, so that the sealing property is improved. be able to.
- the iron constituting the hermetic sealing cap member 41 is formed so that the flange portion is not formed and the cavity portion (recess) 60 is formed.
- the flat portion (sealing surface) 41 c has the conventional structure. It is longer than.
- the length of the flat portion 41c is set to, for example, the same length as the flat portion 141c of the conventional flange portion 141a shown in FIG.
- the hermetic sealing cap member 41 according to the second embodiment shown in FIG. 8 has the same external dimensions as the hermetic sealing cap member 141 having the conventional cavity portion 160 shown in FIG.
- the content area of the cavity section 60 can be made larger than the internal volume of the cavity section 160 shown in FIG. Therefore, when storing the same electronic components as before, a hermetically sealed cap having a small external dimension can be used, so that the size of the package can be reduced.
- a nickel layer 42 having a thickness of about 2 m is formed on the entire surface of the hermetic sealing cap member 41, and then about 0.0 A gold plating layer 43 is formed with a thickness of 5 m.
- the gold plating layer 4 of the hermetic sealing cap member 4 1 is brought into contact with the upper surface of the ceramic substrate 31 to which the electronic component 34 is mounted via the bumps 33.
- the solder layer 3 2 temporarily brazed is placed on 3.
- the hermetic sealing cap member 41 is joined to the upper surface of the ceramic substrate 31 by melting the solder layer 32 at a temperature of about 280 ° C. or higher.
- the electronic component housing package according to the second embodiment shown in FIG. 5 is formed.
- FIGS. 13 to 16 are cross-sectional views for explaining another example of the manufacturing process of the electronic component housing package according to the second embodiment shown in FIG. Next, another example of the manufacturing process of the hermetic sealing cap according to the second embodiment will be described with reference to FIGS.
- a hermetic sealing cap member 41 having the shape shown in FIG. 7 is formed by the first drawing step and the second drawing step shown in FIGS. 6 and 7, and as shown in FIG.
- a nickel plating layer 42 having a thickness of about 2 is formed on the entire surface of the hermetic sealing cap member 41.
- a resist 51 is formed so as to cover the nickel plating layer 42 other than the region where the solder layer 32 is arranged.
- a gold plating layer 43 having a thickness of about 0.05 m is formed in a region where the solder layer 32 is disposed. Thereafter, by removing the resist 51, a shape as shown in FIG. 16 is obtained. Then, similar to the process shown in FIG. 12, after a solder layer 32 made of gold-tin solder (for example, 2081-311 solder) is arranged on the gold plating layer 43, about 28 Temporarily solder the solder layer 32 to the gold plating layer 43 at 0 ° C or more. Then, as shown in FIG. 5, the hermetic sealing cap member 41 and the like are sealed so as to seal the ceramic substrate 31. After the solder layer 32 is disposed, the hermetic sealing is performed by melting the solder layer 32 again at a temperature of about 280 ° C. or more.
- gold-tin solder for example, 2081-311 solder
- a solder layer made of gold-tin-tin (Au—Sn) solder was used as a sealing material, and a nickel plating layer and a gold plating layer were used as plating layers.
- the present invention is not limited to this.
- a sealing material made of other solder or brazing material may be used, and another plating layer may be used.
- the first plating layer is provided at least in a region other than the region where the sealing material of the hermetic sealing cap member is formed, and the region where the sealing material of the hermetic sealing cap member is arranged is provided.
- the second plating layer including a material having better wettability with the sealing material than the first plating layer is provided, the same effect as in the above embodiment can be obtained.
- the sealing-side inner surface corner 41b has a radius of curvature larger than 0 mm and 0.1 mm or less.
- the side inner surface corner portion 41b may be formed so as to be substantially at a right angle (90 °). In this way, by making the corner portion 41b substantially a right angle (90 °), it is possible to prevent the conventional solder layer from creeping up as shown in FIG. Further, by making the corner portion 41b substantially a right angle (90 °), the length of the flat portion of the flange portion can be maximized. Thereby, a small cap member having good sealing properties can be provided.
- the coining process is performed by crushing the inner surface of the flange portion on the sealing side in the second drawing step. It may be formed.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020047012544A KR101117049B1 (ko) | 2003-02-06 | 2004-02-02 | 기밀 밀봉용 캡 및 그 제조 방법 |
JP2005504815A JPWO2004070836A1 (ja) | 2003-02-06 | 2004-02-02 | 気密封止用キャップおよびその製造方法 |
US10/926,102 US7173331B2 (en) | 2003-02-06 | 2004-08-26 | Hermetic sealing cap and method of manufacturing the same |
Applications Claiming Priority (2)
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JP2003-029131 | 2003-02-06 | ||
JP2003029131 | 2003-02-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US10/926,102 Continuation US7173331B2 (en) | 2003-02-06 | 2004-08-26 | Hermetic sealing cap and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
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WO2004070836A1 true WO2004070836A1 (ja) | 2004-08-19 |
Family
ID=32844225
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PCT/JP2004/000996 WO2004070836A1 (ja) | 2003-02-06 | 2004-02-02 | 気密封止用キャップおよびその製造方法 |
Country Status (5)
Country | Link |
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US (1) | US7173331B2 (ja) |
JP (2) | JPWO2004070836A1 (ja) |
KR (1) | KR101117049B1 (ja) |
CN (1) | CN100365803C (ja) |
WO (1) | WO2004070836A1 (ja) |
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JP2017011249A (ja) * | 2015-06-17 | 2017-01-12 | 株式会社ソーデナガノ | 電子部品用パッケージの金属カバー |
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JP6387818B2 (ja) * | 2014-12-11 | 2018-09-12 | 日立金属株式会社 | 気密封止用蓋材の製造方法 |
JP6499886B2 (ja) * | 2015-03-11 | 2019-04-10 | 田中貴金属工業株式会社 | 電子部品封止用キャップ |
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JP2017120865A (ja) * | 2015-12-29 | 2017-07-06 | 日立金属株式会社 | 気密封止用キャップ |
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US20210398871A1 (en) * | 2020-06-18 | 2021-12-23 | Intel Corporation | Integrated circuit heat spreader including sealant interface material |
CN114696777A (zh) * | 2020-12-25 | 2022-07-01 | Ngk电子器件株式会社 | 封装体及其制造方法 |
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KR101133339B1 (ko) * | 2004-11-05 | 2012-04-06 | 가부시키가이샤 네오맥스 마테리아르 | 기밀 밀봉용 캡, 기밀 밀봉용 캡의 제조 방법 및 전자 부품수납용 패키지 |
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US9508676B1 (en) | 2015-08-10 | 2016-11-29 | Chipbond Technology Corporation | Semiconductor package structure having hollow chamber and bottom substrate and package process thereof |
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Also Published As
Publication number | Publication date |
---|---|
KR20050092339A (ko) | 2005-09-21 |
US7173331B2 (en) | 2007-02-06 |
KR101117049B1 (ko) | 2012-03-15 |
CN100365803C (zh) | 2008-01-30 |
US20050023661A1 (en) | 2005-02-03 |
JP5378921B2 (ja) | 2013-12-25 |
CN1698195A (zh) | 2005-11-16 |
JP2010021563A (ja) | 2010-01-28 |
JPWO2004070836A1 (ja) | 2006-06-01 |
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