JP5294192B2 - 半導体装置及びその製造方法 - Google Patents
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- JP5294192B2 JP5294192B2 JP2008033015A JP2008033015A JP5294192B2 JP 5294192 B2 JP5294192 B2 JP 5294192B2 JP 2008033015 A JP2008033015 A JP 2008033015A JP 2008033015 A JP2008033015 A JP 2008033015A JP 5294192 B2 JP5294192 B2 JP 5294192B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 239000012535 impurity Substances 0.000 claims description 272
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 239000012212 insulator Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 4
- 230000005596 ionic collisions Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
2 フィールド酸化膜
3、112 ゲート絶縁膜パターン
4、113 ゲート電極
5、109 第1P型不純物領域
6 第3N型不純物領域
7、114 第2P型不純物領域
8 第2N型不純物領域
9、116 第3P型不純物領域
10、100 半導体装置
101 シリコン−オン−インシュレータ基板
101a 第1シリコン膜
101b シリコン酸化膜
101c 第2シリコン膜
104 予備第1P型不純物領域
105 予備第1水平部
106 予備第2水平部
107 第1水平部
107a 第1側部
107b 第2側部
108 第2水平部
110 フィールド酸化構造物
111 追加N型ドリフト部
115 N型ソース領域
117 P型ドレイン領域
Claims (4)
- 第1シリコン膜、シリコン酸化膜、及び第2シリコン膜が順次に積層されたSOI(シリコン−オン−インシュレータ)基板上に形成された第1不純物濃度を有する第1N型不純物領域、及び該第1N型不純物領域と水平的に離隔される第1P型不純物領域と、
前記第1不純物領域が形成されない部分に第2不純物濃度を有して前記第1P型不純物領域と接する第1水平部、及び前記第1N型不純物領域の上部に前記第1及び第2不純物濃度より大きい第3不純物濃度を有する第2水平部を含むドリフト領域と、
前記ドリフト領域上の前記第1水平部と前記第2水平部との間の境界上部に形成されたフィールド酸化膜構造物と、
前記第2水平部のうちの前記フィールド酸化構造物でカバーされない部分に形成された前記第3不純物濃度より大きい第4不純物濃度を有する追加N型ドリフト部と、
前記第1水平部上で前記フィールド酸化構造物から所定の長さまで延長されて形成されたゲート絶縁膜パターン、及び該ゲート絶縁膜パターン及び前記フィールド酸化膜構造物の一部上に形成されたゲート電極を含むゲート構造物と、
前記第1水平部のうちの前記ゲート構造物でカバーされない部分に形成された前記第1P型不純物領域と接する第2P型不純物領域と、
前記第2P型不純物領域の露出した表面のうちのゲート構造物と隣接する部分に形成されたN型ソース領域、及び該N型ソース領域と隣接する部分に形成された第3P型不純物領域を含むソースと、
前記追加N型ドリフト部の露出した表面に形成されたP型ドレイン領域を含むドレインと、を有することを特徴とする半導体装置。 - 前記第3不純物濃度は、前記第2不純物濃度より少なくとも2倍以上であることを特徴とする請求項1記載の半導体装置。
- 前記第2及び第3不純物は、それぞれN型不純物であることを特徴とする請求項1記載の半導体装置。
- シリコン膜に該シリコン膜の表面から所定の深さまで延長して第1不純物濃度を有する第1N型不純物領域を形成する段階と、
前記シリコン膜の内部に前記第1N型不純物領域と水平的に離隔される第1P型不純物領域を形成する段階と、
前記シリコン膜の全表面にN型不純物を注入し、前記シリコン膜のうち前記第1不純物領域が形成されない部分に第2不純物濃度を有して前記第1P型不純物領域と接する第1水平部、及び前記第1N型不純物領域の上部に前記第1及び第2不純物濃度より大きい第3不純物濃度を有する第2水平部を含むドリフト領域を形成する段階と、
前記シリコン膜の表面中の前記第1水平部及び前記第2水平部が接する部分にフィールド酸化構造物を形成する段階と、
前記第2水平部のうち、前記フィールド酸化構造物でカバーされない部分に前記第3不純物濃度より大きい第4不純物濃度を有する追加N型ドリフト部を形成する段階と、
前記第1水平部上で前記フィールド酸化構造物から所定の長さまで延長されるゲート絶縁膜パターン、及び該ゲート絶縁膜パターン及び前記フィールド酸化構造物上に形成されるゲート電極を含むゲート構造物を形成する段階と、
前記第1水平部のうち、前記ゲート構造物でカバーされない部分に前記第1P型不純物領域と接する第2P型不純物領域を形成する段階と、
前記第2P型不純物領域の露出した表面のうち、ゲート構造物と隣接した部分にN型ソース領域を形成する段階と、
前記第2P型不純物領域の露出した表面のうち、前記N型ソース領域と隣接する部分及び前記追加N型ドリフト部の露出した表面にそれぞれ第3P型不純物領域及びP型ドレイン領域を形成する段階と、を有することを特徴とする半導体装置の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070015390A KR100847306B1 (ko) | 2007-02-14 | 2007-02-14 | 반도체 장치 및 이의 제조 방법 |
KR10-2007-0015390 | 2007-02-14 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008199029A JP2008199029A (ja) | 2008-08-28 |
JP2008199029A5 JP2008199029A5 (ja) | 2011-03-24 |
JP5294192B2 true JP5294192B2 (ja) | 2013-09-18 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008033015A Expired - Fee Related JP5294192B2 (ja) | 2007-02-14 | 2008-02-14 | 半導体装置及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8058703B2 (ja) |
JP (1) | JP5294192B2 (ja) |
KR (1) | KR100847306B1 (ja) |
CN (2) | CN102938412A (ja) |
DE (1) | DE102008008867A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI387106B (zh) * | 2008-10-16 | 2013-02-21 | Vanguard Int Semiconduct Corp | 閘極絕緣雙接面電晶體(igbt)靜電放電防護元件 |
TWI503893B (zh) * | 2008-12-30 | 2015-10-11 | Vanguard Int Semiconduct Corp | 半導體結構及其製作方法 |
US8049307B2 (en) | 2009-01-23 | 2011-11-01 | Vanguard International Semiconductor Corporation | Insulated gate bipolar transistor (IGBT) electrostatic discharge (ESD) protection devices |
CN101958344B (zh) * | 2009-07-16 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 绿色场效应晶体管及其制造方法 |
CN105097903B (zh) * | 2009-11-09 | 2020-07-03 | 苏州博创集成电路设计有限公司 | 绝缘体上硅的横向n型绝缘栅双极晶体管 |
CN201708157U (zh) * | 2010-06-30 | 2011-01-12 | 四川和芯微电子股份有限公司 | 结型场效应晶体管结构 |
US8735937B2 (en) * | 2012-05-31 | 2014-05-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fully isolated LIGBT and methods for forming the same |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
CN104882476B (zh) * | 2015-05-25 | 2018-09-25 | 上海先进半导体制造股份有限公司 | 横向igbt及其制作方法 |
Family Cites Families (11)
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US5132753A (en) * | 1990-03-23 | 1992-07-21 | Siliconix Incorporated | Optimization of BV and RDS-on by graded doping in LDD and other high voltage ICs |
JPH08227999A (ja) * | 1994-12-21 | 1996-09-03 | Mitsubishi Electric Corp | 絶縁ゲート型バイポーラトランジスタ及びその製造方法並びに半導体集積回路及びその製造方法 |
JP3222380B2 (ja) | 1996-04-25 | 2001-10-29 | シャープ株式会社 | 電界効果トランジスタ、および、cmosトランジスタ |
JPH10242456A (ja) * | 1997-02-28 | 1998-09-11 | Toshiba Corp | 横型絶縁ゲートバイポーラトランジスタ |
KR100244282B1 (ko) * | 1997-08-25 | 2000-02-01 | 김영환 | 고전압 트랜지스터의 구조 및 제조 방법 |
US6117738A (en) * | 1998-11-20 | 2000-09-12 | United Microelectronics Corp. | Method for fabricating a high-bias semiconductor device |
JP2000332247A (ja) * | 1999-03-15 | 2000-11-30 | Toshiba Corp | 半導体装置 |
US6191453B1 (en) | 1999-12-13 | 2001-02-20 | Philips Electronics North America Corporation | Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology |
JP3831615B2 (ja) * | 2001-01-16 | 2006-10-11 | 三洋電機株式会社 | 半導体装置とその製造方法 |
JP2002270844A (ja) * | 2001-03-07 | 2002-09-20 | Toshiba Corp | 半導体装置及びその製造方法 |
TW200602758A (en) | 2004-03-03 | 2006-01-16 | Kimoto Kk | Light control film and backlight device using it |
-
2007
- 2007-02-14 KR KR1020070015390A patent/KR100847306B1/ko not_active IP Right Cessation
-
2008
- 2008-02-13 CN CN2012104543756A patent/CN102938412A/zh active Pending
- 2008-02-13 CN CN2008100099100A patent/CN101246901B/zh not_active Expired - Fee Related
- 2008-02-13 DE DE102008008867A patent/DE102008008867A1/de not_active Withdrawn
- 2008-02-14 JP JP2008033015A patent/JP5294192B2/ja not_active Expired - Fee Related
- 2008-02-14 US US12/070,096 patent/US8058703B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN102938412A (zh) | 2013-02-20 |
DE102008008867A1 (de) | 2008-08-21 |
KR100847306B1 (ko) | 2008-07-21 |
CN101246901A (zh) | 2008-08-20 |
CN101246901B (zh) | 2013-01-02 |
US20080191316A1 (en) | 2008-08-14 |
JP2008199029A (ja) | 2008-08-28 |
US8058703B2 (en) | 2011-11-15 |
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