JP5268626B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5268626B2
JP5268626B2 JP2008331822A JP2008331822A JP5268626B2 JP 5268626 B2 JP5268626 B2 JP 5268626B2 JP 2008331822 A JP2008331822 A JP 2008331822A JP 2008331822 A JP2008331822 A JP 2008331822A JP 5268626 B2 JP5268626 B2 JP 5268626B2
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JP
Japan
Prior art keywords
sample
gas
processed
diameter
gas supply
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Expired - Fee Related
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JP2008331822A
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English (en)
Japanese (ja)
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JP2010153680A5 (OSRAM
JP2010153680A (ja
Inventor
賢悦 横川
貴雅 一野
一幸 廣實
任光 金清
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
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Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2008331822A priority Critical patent/JP5268626B2/ja
Priority to KR1020090006817A priority patent/KR101039087B1/ko
Priority to US12/392,237 priority patent/US20100163187A1/en
Publication of JP2010153680A publication Critical patent/JP2010153680A/ja
Publication of JP2010153680A5 publication Critical patent/JP2010153680A5/ja
Application granted granted Critical
Publication of JP5268626B2 publication Critical patent/JP5268626B2/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2008331822A 2008-12-26 2008-12-26 プラズマ処理装置 Expired - Fee Related JP5268626B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008331822A JP5268626B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置
KR1020090006817A KR101039087B1 (ko) 2008-12-26 2009-01-29 플라즈마처리장치
US12/392,237 US20100163187A1 (en) 2008-12-26 2009-02-25 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008331822A JP5268626B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2010153680A JP2010153680A (ja) 2010-07-08
JP2010153680A5 JP2010153680A5 (OSRAM) 2012-02-16
JP5268626B2 true JP5268626B2 (ja) 2013-08-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008331822A Expired - Fee Related JP5268626B2 (ja) 2008-12-26 2008-12-26 プラズマ処理装置

Country Status (3)

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US (1) US20100163187A1 (OSRAM)
JP (1) JP5268626B2 (OSRAM)
KR (1) KR101039087B1 (OSRAM)

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* Cited by examiner, † Cited by third party
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