JP5254220B2 - 中間層を有する半導体素子の形成方法 - Google Patents

中間層を有する半導体素子の形成方法 Download PDF

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Publication number
JP5254220B2
JP5254220B2 JP2009513345A JP2009513345A JP5254220B2 JP 5254220 B2 JP5254220 B2 JP 5254220B2 JP 2009513345 A JP2009513345 A JP 2009513345A JP 2009513345 A JP2009513345 A JP 2009513345A JP 5254220 B2 JP5254220 B2 JP 5254220B2
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Japan
Prior art keywords
intermediate layer
metal
forming
layer
dielectric
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Expired - Fee Related
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JP2009513345A
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English (en)
Japanese (ja)
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JP2009538542A5 (enExample
JP2009538542A (ja
Inventor
ケイ． シェーファー、ジェームス
アイ． ヘグデ、ラーマ
ビー． サーマヴェーダム、スリカント
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NXP USA Inc
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NXP USA Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/667—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN workfunction layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0135—Manufacturing their gate conductors
    • H10D84/014—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0144—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
JP2009513345A 2006-05-26 2007-03-21 中間層を有する半導体素子の形成方法 Expired - Fee Related JP5254220B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/420,525 US7445976B2 (en) 2006-05-26 2006-05-26 Method of forming a semiconductor device having an interlayer and structure therefor
US11/420,525 2006-05-26
PCT/US2007/064482 WO2007140037A2 (en) 2006-05-26 2007-03-21 Method of forming a semiconductor device having an interlayer and structure thereof

Publications (3)

Publication Number Publication Date
JP2009538542A JP2009538542A (ja) 2009-11-05
JP2009538542A5 JP2009538542A5 (enExample) 2010-04-22
JP5254220B2 true JP5254220B2 (ja) 2013-08-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009513345A Expired - Fee Related JP5254220B2 (ja) 2006-05-26 2007-03-21 中間層を有する半導体素子の形成方法

Country Status (5)

Country Link
US (1) US7445976B2 (enExample)
JP (1) JP5254220B2 (enExample)
CN (1) CN101569005B (enExample)
TW (1) TWI415255B (enExample)
WO (1) WO2007140037A2 (enExample)

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US7445976B2 (en) * 2006-05-26 2008-11-04 Freescale Semiconductor, Inc. Method of forming a semiconductor device having an interlayer and structure therefor
JP4271230B2 (ja) * 2006-12-06 2009-06-03 株式会社東芝 半導体装置
KR100954107B1 (ko) * 2006-12-27 2010-04-23 주식회사 하이닉스반도체 반도체 소자의 제조방법
US7612422B2 (en) * 2006-12-29 2009-11-03 Texas Instruments Incorporated Structure for dual work function metal gate electrodes by control of interface dipoles
US7812414B2 (en) * 2007-01-23 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid process for forming metal gates
US7842977B2 (en) * 2007-02-15 2010-11-30 Qimonda Ag Gate electrode structure, MOS field effect transistors and methods of manufacturing the same
US7435652B1 (en) * 2007-03-30 2008-10-14 International Business Machines Corporation Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET
US8734440B2 (en) * 2007-07-03 2014-05-27 St. Jude Medical, Atrial Fibrillation Division, Inc. Magnetically guided catheter
US20090008725A1 (en) * 2007-07-03 2009-01-08 International Business Machines Corporation Method for deposition of an ultra-thin electropositive metal-containing cap layer
US7625791B2 (en) * 2007-10-29 2009-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. High-k dielectric metal gate device structure and method for forming the same
US20090152636A1 (en) * 2007-12-12 2009-06-18 International Business Machines Corporation High-k/metal gate stack using capping layer methods, ic and related transistors
US8030709B2 (en) * 2007-12-12 2011-10-04 International Business Machines Corporation Metal gate stack and semiconductor gate stack for CMOS devices
US8536660B2 (en) * 2008-03-12 2013-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid process for forming metal gates of MOS devices
EP2112687B1 (en) * 2008-04-22 2012-09-19 Imec Method for fabricating a dual workfunction semiconductor device and the device made thereof
US20090267130A1 (en) * 2008-04-28 2009-10-29 International Business Machines Corporation Structure and process integration for flash storage element and dual conductor complementary mosfets
US7821081B2 (en) * 2008-06-05 2010-10-26 International Business Machines Corporation Method and apparatus for flatband voltage tuning of high-k field effect transistors
US20110042759A1 (en) 2009-08-21 2011-02-24 International Business Machines Corporation Switching device having a molybdenum oxynitride metal gate
US8399344B2 (en) * 2009-10-07 2013-03-19 Asm International N.V. Method for adjusting the threshold voltage of a gate stack of a PMOS device
US8304842B2 (en) * 2010-07-14 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnection structure for N/P metal gates
US20120018813A1 (en) * 2010-07-22 2012-01-26 International Business Machines Corporation BARRIER COAT FOR ELIMINATION OF RESIST RESIDUES ON HIGH k/METAL GATE STACKS
US8691638B2 (en) * 2010-12-10 2014-04-08 Globalfoundries Singapore Pte. Ltd. High-K metal gate device
US9006092B2 (en) * 2011-11-03 2015-04-14 United Microelectronics Corp. Semiconductor structure having fluoride metal layer and process thereof
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
TWI625792B (zh) * 2014-06-09 2018-06-01 聯華電子股份有限公司 半導體元件及其製作方法
US9837487B2 (en) * 2015-11-30 2017-12-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with gate stack
US9666574B1 (en) * 2015-11-30 2017-05-30 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device structure and manufacturing method thereof
US10686050B2 (en) 2018-09-26 2020-06-16 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device

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Also Published As

Publication number Publication date
TWI415255B (zh) 2013-11-11
WO2007140037A2 (en) 2007-12-06
US20070272975A1 (en) 2007-11-29
US7445976B2 (en) 2008-11-04
JP2009538542A (ja) 2009-11-05
CN101569005B (zh) 2012-07-04
TW200746413A (en) 2007-12-16
CN101569005A (zh) 2009-10-28
WO2007140037A3 (en) 2008-12-24

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