JP5254220B2 - 中間層を有する半導体素子の形成方法 - Google Patents
中間層を有する半導体素子の形成方法 Download PDFInfo
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- JP5254220B2 JP5254220B2 JP2009513345A JP2009513345A JP5254220B2 JP 5254220 B2 JP5254220 B2 JP 5254220B2 JP 2009513345 A JP2009513345 A JP 2009513345A JP 2009513345 A JP2009513345 A JP 2009513345A JP 5254220 B2 JP5254220 B2 JP 5254220B2
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- intermediate layer
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- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 58
- 239000002184 metal Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 16
- -1 tungsten nitride Chemical class 0.000 claims description 7
- 229910001507 metal halide Inorganic materials 0.000 claims description 5
- 150000005309 metal halides Chemical class 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 claims description 2
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000457 iridium oxide Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 96
- 230000008569 process Effects 0.000 description 13
- 229910016569 AlF 3 Inorganic materials 0.000 description 12
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 10
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 9
- 229910052731 fluorine Inorganic materials 0.000 description 9
- 239000011737 fluorine Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000000231 atomic layer deposition Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910001512 metal fluoride Inorganic materials 0.000 description 5
- OEKDNFRQVZLFBZ-UHFFFAOYSA-K scandium fluoride Chemical compound F[Sc](F)F OEKDNFRQVZLFBZ-UHFFFAOYSA-K 0.000 description 5
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 5
- 229910001637 strontium fluoride Inorganic materials 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052736 halogen Inorganic materials 0.000 description 4
- 150000002367 halogens Chemical class 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- AHLATJUETSFVIM-UHFFFAOYSA-M rubidium fluoride Chemical compound [F-].[Rb+] AHLATJUETSFVIM-UHFFFAOYSA-M 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 241000252506 Characiformes Species 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910026551 ZrC Inorganic materials 0.000 description 1
- OTCHGXYCWNXDOA-UHFFFAOYSA-N [C].[Zr] Chemical compound [C].[Zr] OTCHGXYCWNXDOA-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000003682 fluorination reaction Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- XUIMIQQOPSSXEZ-IGMARMGPSA-N silicon-28 atom Chemical compound [28Si] XUIMIQQOPSSXEZ-IGMARMGPSA-N 0.000 description 1
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/82345—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823462—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Description
当業者であれば、図中の構成要素が簡潔性と明瞭性のために示されており、必ずしも実寸に基づいて示されていないことは明らかである。例えば、図中の構成要素のいくつかは、本発明の実施形態を理解し易くするため、他の構成要素よりも誇張して示されている。
利点、長所、及び課題の解決策を特定の実施形態を参照して説明した。但し、利点、長所、及び課題の解決策、及び、利点、長所、又は解決策をもたらすか、或いはより顕著にする構成要素は、請求項の一部又は全てにとって極めて重要な、必須の、又は不可欠な特徴であるものと解釈すべきではない。本明細書において使用されるように、「備える」との用語や他の変形は非限定的な包括を目的としているため、挙げられた構成要素を備える工程、方法、物品、又は装置は、それらの構成要素のみを含むのではなく、上記工程、方法、物品、又は装置に明確には挙げられていないか、或いは内在する他の構成要素を含むことができる。本明細書で使用される「一つ」は、1又は2以上として定義される。更に、明細書及び請求項内の「前」、「後」、「上側」、「下側」、「上」、「下」等の用語は、仮に記載されていれば、説明のためであって、必ずしも永久的な相対位置を示すために使用されているものではない。そのように使用されている用語は、本明細書に記載の本発明の実施形態が、例えば、本明細書にて説明したか、或いはそれとは別に説明しない別の向きでも取り扱えるように、適切な状況の下で置き換えてもよい。
Claims (3)
- 半導体素子の形成方法であって、
基板を設けるステップと、
前記基板上に、誘電体層を形成するステップと、
前記誘電体層上に、金属ハロゲン化物からなる第1の中間層を形成するステップと、
前記第1の中間層上に、第1の金属電極を形成するステップと、
前記第1の金属電極上であって前記半導体素子の第1の領域と対応する部分にパターンマスクを形成するステップと、
前記パターンマスクにより覆われていない前記第1の金属電極及び前記第1の中間層の露出部分をエッチングするステップであって、前記露出部分は、前記半導体素子の第2の領域と対応するステップと、
前記第1の領域において前記第1の金属電極を覆うと共に前記第2の領域において前記誘電体層を覆うように、金属ハロゲン化物からなる第2の中間層を形成するステップと、
前記第2の中間層上に、第2の金属電極を形成するステップと
を備える方法。 - 請求項1記載の方法において、
前記基板は半導体材料を含む方法。 - 請求項2記載の方法において、
前記第1の金属電極を形成するステップは、窒化モリブデン、酸窒化モリブデン、窒化タングステン、酸化ルテニウム、ルテニウム、窒化チタン、及び酸化イリジウムからなる群より選択される少なくとも一つの材料を含む金属層を形成するステップを含む方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/420,525 US7445976B2 (en) | 2006-05-26 | 2006-05-26 | Method of forming a semiconductor device having an interlayer and structure therefor |
US11/420,525 | 2006-05-26 | ||
PCT/US2007/064482 WO2007140037A2 (en) | 2006-05-26 | 2007-03-21 | Method of forming a semiconductor device having an interlayer and structure thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009538542A JP2009538542A (ja) | 2009-11-05 |
JP2009538542A5 JP2009538542A5 (ja) | 2010-04-22 |
JP5254220B2 true JP5254220B2 (ja) | 2013-08-07 |
Family
ID=38748748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009513345A Expired - Fee Related JP5254220B2 (ja) | 2006-05-26 | 2007-03-21 | 中間層を有する半導体素子の形成方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7445976B2 (ja) |
JP (1) | JP5254220B2 (ja) |
CN (1) | CN101569005B (ja) |
TW (1) | TWI415255B (ja) |
WO (1) | WO2007140037A2 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7445976B2 (en) * | 2006-05-26 | 2008-11-04 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having an interlayer and structure therefor |
JP4271230B2 (ja) * | 2006-12-06 | 2009-06-03 | 株式会社東芝 | 半導体装置 |
KR100954107B1 (ko) * | 2006-12-27 | 2010-04-23 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US7612422B2 (en) * | 2006-12-29 | 2009-11-03 | Texas Instruments Incorporated | Structure for dual work function metal gate electrodes by control of interface dipoles |
US7812414B2 (en) * | 2007-01-23 | 2010-10-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid process for forming metal gates |
US7842977B2 (en) * | 2007-02-15 | 2010-11-30 | Qimonda Ag | Gate electrode structure, MOS field effect transistors and methods of manufacturing the same |
US7435652B1 (en) * | 2007-03-30 | 2008-10-14 | International Business Machines Corporation | Integration schemes for fabricating polysilicon gate MOSFET and high-K dielectric metal gate MOSFET |
US8734440B2 (en) * | 2007-07-03 | 2014-05-27 | St. Jude Medical, Atrial Fibrillation Division, Inc. | Magnetically guided catheter |
US20090008725A1 (en) * | 2007-07-03 | 2009-01-08 | International Business Machines Corporation | Method for deposition of an ultra-thin electropositive metal-containing cap layer |
US7625791B2 (en) * | 2007-10-29 | 2009-12-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | High-k dielectric metal gate device structure and method for forming the same |
US8030709B2 (en) * | 2007-12-12 | 2011-10-04 | International Business Machines Corporation | Metal gate stack and semiconductor gate stack for CMOS devices |
US20090152636A1 (en) * | 2007-12-12 | 2009-06-18 | International Business Machines Corporation | High-k/metal gate stack using capping layer methods, ic and related transistors |
US8536660B2 (en) * | 2008-03-12 | 2013-09-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Hybrid process for forming metal gates of MOS devices |
EP2112687B1 (en) * | 2008-04-22 | 2012-09-19 | Imec | Method for fabricating a dual workfunction semiconductor device and the device made thereof |
US20090267130A1 (en) * | 2008-04-28 | 2009-10-29 | International Business Machines Corporation | Structure and process integration for flash storage element and dual conductor complementary mosfets |
US7821081B2 (en) * | 2008-06-05 | 2010-10-26 | International Business Machines Corporation | Method and apparatus for flatband voltage tuning of high-k field effect transistors |
US20110042759A1 (en) * | 2009-08-21 | 2011-02-24 | International Business Machines Corporation | Switching device having a molybdenum oxynitride metal gate |
US8399344B2 (en) * | 2009-10-07 | 2013-03-19 | Asm International N.V. | Method for adjusting the threshold voltage of a gate stack of a PMOS device |
US8304842B2 (en) | 2010-07-14 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnection structure for N/P metal gates |
US20120018813A1 (en) * | 2010-07-22 | 2012-01-26 | International Business Machines Corporation | BARRIER COAT FOR ELIMINATION OF RESIST RESIDUES ON HIGH k/METAL GATE STACKS |
US8691638B2 (en) * | 2010-12-10 | 2014-04-08 | Globalfoundries Singapore Pte. Ltd. | High-K metal gate device |
US9006092B2 (en) * | 2011-11-03 | 2015-04-14 | United Microelectronics Corp. | Semiconductor structure having fluoride metal layer and process thereof |
US9394609B2 (en) | 2014-02-13 | 2016-07-19 | Asm Ip Holding B.V. | Atomic layer deposition of aluminum fluoride thin films |
TWI625792B (zh) * | 2014-06-09 | 2018-06-01 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
US9666574B1 (en) * | 2015-11-30 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device structure and manufacturing method thereof |
US9837487B2 (en) | 2015-11-30 | 2017-12-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device structure with gate stack |
US10686050B2 (en) * | 2018-09-26 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US675097A (en) * | 1901-01-03 | 1901-05-28 | Mortimer G Lewis | Bench-vise. |
CA2017284C (en) * | 1989-07-04 | 1995-10-03 | Kazutomi Suzuki | Optical recording medium |
JP2746289B2 (ja) * | 1989-09-09 | 1998-05-06 | 忠弘 大見 | 素子の作製方法並びに半導体素子およびその作製方法 |
JPH0464226A (ja) * | 1990-07-04 | 1992-02-28 | Tadahiro Omi | 金属フッ化膜を備えた電子装置 |
JP3689524B2 (ja) * | 1996-03-22 | 2005-08-31 | キヤノン株式会社 | 酸化アルミニウム膜及びその形成方法 |
KR100278190B1 (ko) * | 1997-02-19 | 2001-01-15 | 미다라이 후지오 | 박막형성장치및이를이용한박막형성방법 |
TW396510B (en) * | 1998-06-03 | 2000-07-01 | United Microelectronics Corp | Shallow trench isolation formed by chemical mechanical polishing |
JP2001257344A (ja) * | 2000-03-10 | 2001-09-21 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
EP1134303B1 (en) * | 2000-03-13 | 2010-06-09 | Canon Kabushiki Kaisha | Thin film production process |
US6808806B2 (en) | 2001-05-07 | 2004-10-26 | Flex Products, Inc. | Methods for producing imaged coated articles by using magnetic pigments |
JP5118276B2 (ja) * | 2001-09-05 | 2013-01-16 | Jx日鉱日石金属株式会社 | 半導体装置用ゲート絶縁膜形成用スパッタリングターゲット、同製造方法及び半導体装置用ゲート絶縁膜 |
JP2003273350A (ja) * | 2002-03-15 | 2003-09-26 | Nec Corp | 半導体装置及びその製造方法 |
US7087480B1 (en) * | 2002-04-18 | 2006-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process to make high-k transistor dielectrics |
JP4154578B2 (ja) * | 2002-12-06 | 2008-09-24 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP4524995B2 (ja) * | 2003-03-25 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US6972224B2 (en) * | 2003-03-27 | 2005-12-06 | Freescale Semiconductor, Inc. | Method for fabricating dual-metal gate device |
US6890807B2 (en) * | 2003-05-06 | 2005-05-10 | Intel Corporation | Method for making a semiconductor device having a metal gate electrode |
US7030430B2 (en) * | 2003-08-15 | 2006-04-18 | Intel Corporation | Transition metal alloys for use as a gate electrode and devices incorporating these alloys |
US7030001B2 (en) * | 2004-04-19 | 2006-04-18 | Freescale Semiconductor, Inc. | Method for forming a gate electrode having a metal |
KR100741983B1 (ko) * | 2004-07-05 | 2007-07-23 | 삼성전자주식회사 | 고유전율의 게이트 절연막을 갖는 반도체 장치 및 그 제조방법 |
US7514310B2 (en) * | 2004-12-01 | 2009-04-07 | Samsung Electronics Co., Ltd. | Dual work function metal gate structure and related method of manufacture |
US7745887B2 (en) * | 2005-02-22 | 2010-06-29 | Samsung Electronics Co., Ltd. | Dual work function metal gate structure and related method of manufacture |
US7332433B2 (en) * | 2005-09-22 | 2008-02-19 | Sematech Inc. | Methods of modulating the work functions of film layers |
US7445976B2 (en) * | 2006-05-26 | 2008-11-04 | Freescale Semiconductor, Inc. | Method of forming a semiconductor device having an interlayer and structure therefor |
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US7445976B2 (en) | 2008-11-04 |
CN101569005B (zh) | 2012-07-04 |
TW200746413A (en) | 2007-12-16 |
WO2007140037A3 (en) | 2008-12-24 |
US20070272975A1 (en) | 2007-11-29 |
JP2009538542A (ja) | 2009-11-05 |
CN101569005A (zh) | 2009-10-28 |
TWI415255B (zh) | 2013-11-11 |
WO2007140037A2 (en) | 2007-12-06 |
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