JP5230955B2 - 抵抗性メモリ素子 - Google Patents
抵抗性メモリ素子 Download PDFInfo
- Publication number
- JP5230955B2 JP5230955B2 JP2007050627A JP2007050627A JP5230955B2 JP 5230955 B2 JP5230955 B2 JP 5230955B2 JP 2007050627 A JP2007050627 A JP 2007050627A JP 2007050627 A JP2007050627 A JP 2007050627A JP 5230955 B2 JP5230955 B2 JP 5230955B2
- Authority
- JP
- Japan
- Prior art keywords
- current control
- resistance
- doped
- control layer
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 claims description 13
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910019897 RuOx Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910003134 ZrOx Inorganic materials 0.000 claims description 3
- 229910005855 NiOx Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 230000008859 change Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000006399 behavior Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/32—Material having simple binary metal oxide structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/56—Structure including two electrodes, a memory active layer and a so called passive or source or reservoir layer which is NOT an electrode, wherein the passive or source or reservoir layer is a source of ions which migrate afterwards in the memory active layer to be only trapped there, to form conductive filaments there or to react with the material of the memory active layer in redox way
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Description
Memory:以下、RRAMと称する)は、主に遷移金属酸化物の電圧によって抵抗値が変化する特性(抵抗変化特性)を利用したものであって、中央の酸化物層及び上下電極を備えた構造を有する。
ングされたZnOxもしくはRuOx、または、金属がドーピングされたSiO2もしくはZrリッチのZrO2から形成されうる。
を示すグラフである。
21 下部電極、
22 第1酸化物層、
23 電流制御層、
24 上部電極。
Claims (2)
- 第1電極と、
前記第1電極上にNiOx,ZrOx,Nb2O5−x,HfO,ZnO,WO3,CoO,CuO2,及びTiO2からなる群から選択された何れか1つから形成され、印加された電圧に応じて生じた2つの抵抗状態を利用して情報を保存する第1酸化物層と、
前記第1酸化物層上に形成される第2酸化物材料からなる電流制御層と、
前記電流制御層上に形成される第2電極と、を備え、
前記電流制御層は前記第1電極と前記第2電極との間を流れるオン電流を減少させる層であり、
前記電流制御層は、遷移金属がドーピングされたRuOx、AlとInのうちいずれか一つがドーピングされたRuOx、金属がドーピングされたSiO2及び金属がドーピングされたZrリッチのZrO2の中から選択されたいずれか1つの物質から形成されることを特徴とする抵抗性ランダムアクセスメモリ素子。 - 前記電流制御層は、10Ω〜10kΩの範囲の抵抗を有することを特徴とする請求項1に記載の抵抗性ランダムアクセスメモリ素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060022728A KR101176543B1 (ko) | 2006-03-10 | 2006-03-10 | 저항성 메모리소자 |
KR10-2006-0022728 | 2006-03-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007243183A JP2007243183A (ja) | 2007-09-20 |
JP5230955B2 true JP5230955B2 (ja) | 2013-07-10 |
Family
ID=38516928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007050627A Active JP5230955B2 (ja) | 2006-03-10 | 2007-02-28 | 抵抗性メモリ素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8009454B2 (ja) |
JP (1) | JP5230955B2 (ja) |
KR (1) | KR101176543B1 (ja) |
CN (1) | CN101034732B (ja) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7777215B2 (en) * | 2007-07-20 | 2010-08-17 | Macronix International Co., Ltd. | Resistive memory structure with buffer layer |
WO2009038032A1 (ja) * | 2007-09-18 | 2009-03-26 | Nec Corporation | 抵抗変化素子および半導体記憶装置 |
US7790497B2 (en) * | 2007-12-20 | 2010-09-07 | Spansion Llc | Method to prevent alloy formation when forming layered metal oxides by metal oxidation |
US7768812B2 (en) | 2008-01-15 | 2010-08-03 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
WO2009122568A1 (ja) | 2008-04-01 | 2009-10-08 | 株式会社 東芝 | 情報記録再生装置 |
US8034655B2 (en) | 2008-04-08 | 2011-10-11 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays |
US8211743B2 (en) | 2008-05-02 | 2012-07-03 | Micron Technology, Inc. | Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes |
US8134865B2 (en) * | 2008-05-06 | 2012-03-13 | Macronix International Co., Ltd. | Operating method of electrical pulse voltage for RRAM application |
US20100188884A1 (en) * | 2008-05-08 | 2010-07-29 | Satoru Mitani | Nonvolatile memory element, nonvolatile memory apparatus, and method of writing data to nonvolatile memory element |
JP5244454B2 (ja) | 2008-05-19 | 2013-07-24 | 株式会社東芝 | 不揮発性記憶装置及びその製造方法 |
WO2009142165A1 (ja) * | 2008-05-20 | 2009-11-26 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US8134137B2 (en) | 2008-06-18 | 2012-03-13 | Micron Technology, Inc. | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods |
US9343665B2 (en) | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
KR100983175B1 (ko) * | 2008-07-03 | 2010-09-20 | 광주과학기술원 | 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법 |
TWI497492B (zh) * | 2012-05-30 | 2015-08-21 | Ind Tech Res Inst | 電阻式隨機存取記憶體之記憶胞及其製造方法 |
US9385314B2 (en) | 2008-08-12 | 2016-07-05 | Industrial Technology Research Institute | Memory cell of resistive random access memory and manufacturing method thereof |
US8362454B2 (en) | 2008-08-12 | 2013-01-29 | Industrial Technology Research Institute | Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the same |
KR100965772B1 (ko) * | 2008-08-13 | 2010-06-24 | 주식회사 하이닉스반도체 | 저항성 메모리 소자 및 그 제조 방법 |
KR20100062570A (ko) * | 2008-12-02 | 2010-06-10 | 삼성전자주식회사 | 저항성 메모리 소자 |
CN101958335B (zh) * | 2009-07-16 | 2013-05-29 | 中芯国际集成电路制造(上海)有限公司 | 相变随机存取存储器及制造方法、编程方法 |
KR101133707B1 (ko) | 2009-09-02 | 2012-04-13 | 에스케이하이닉스 주식회사 | 저항성 메모리 장치 및 그 제조방법 |
JPWO2011043448A1 (ja) * | 2009-10-09 | 2013-03-04 | 日本電気株式会社 | 半導体装置及びその製造方法 |
KR101055748B1 (ko) | 2009-10-23 | 2011-08-11 | 주식회사 하이닉스반도체 | 저항 변화 장치 및 그 제조방법 |
US8411477B2 (en) | 2010-04-22 | 2013-04-02 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8427859B2 (en) | 2010-04-22 | 2013-04-23 | Micron Technology, Inc. | Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells |
US8289763B2 (en) | 2010-06-07 | 2012-10-16 | Micron Technology, Inc. | Memory arrays |
US8351242B2 (en) | 2010-09-29 | 2013-01-08 | Micron Technology, Inc. | Electronic devices, memory devices and memory arrays |
US8759809B2 (en) | 2010-10-21 | 2014-06-24 | Micron Technology, Inc. | Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer |
US8796661B2 (en) | 2010-11-01 | 2014-08-05 | Micron Technology, Inc. | Nonvolatile memory cells and methods of forming nonvolatile memory cell |
US8526213B2 (en) | 2010-11-01 | 2013-09-03 | Micron Technology, Inc. | Memory cells, methods of programming memory cells, and methods of forming memory cells |
US9454997B2 (en) | 2010-12-02 | 2016-09-27 | Micron Technology, Inc. | Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells |
US8431458B2 (en) | 2010-12-27 | 2013-04-30 | Micron Technology, Inc. | Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells |
US8791447B2 (en) | 2011-01-20 | 2014-07-29 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8488365B2 (en) | 2011-02-24 | 2013-07-16 | Micron Technology, Inc. | Memory cells |
US8537592B2 (en) | 2011-04-15 | 2013-09-17 | Micron Technology, Inc. | Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells |
US8519375B2 (en) | 2011-04-19 | 2013-08-27 | Winbond Electronics Corp. | Non-volatile memory with oxygen vacancy barrier layer |
CN102208532A (zh) * | 2011-05-27 | 2011-10-05 | 复旦大学 | 一种采用电场增强层的阻变存储器及其制备方法 |
CN102214674B (zh) * | 2011-06-10 | 2013-02-13 | 清华大学 | 一种基于soi材料的具有自整流效应的阻变存储器 |
US8791444B2 (en) * | 2011-11-23 | 2014-07-29 | National Chiao Tung University | Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same |
WO2013125421A1 (ja) * | 2012-02-21 | 2013-08-29 | 株式会社村田製作所 | 抵抗スイッチングデバイスおよびその製造方法 |
US9680091B2 (en) | 2012-06-15 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a complimentary resistive switching random access memory for high density application |
US9053781B2 (en) * | 2012-06-15 | 2015-06-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for a forming free resistive random access memory with multi-level cell |
US9583556B2 (en) | 2012-07-19 | 2017-02-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process-compatible decoupling capacitor and method for making the same |
US8896096B2 (en) | 2012-07-19 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Process-compatible decoupling capacitor and method for making the same |
US8916846B2 (en) | 2012-09-05 | 2014-12-23 | Kabushiki Kaisha Toshiba | Nonvolatile memory device |
KR101607820B1 (ko) * | 2012-09-05 | 2016-03-30 | 가부시키가이샤 아루박 | 저항 변화 소자 및 그 제조 방법 |
US9847480B2 (en) | 2012-09-28 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
US9231197B2 (en) | 2012-11-12 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Logic compatible RRAM structure and process |
US8742390B1 (en) | 2012-11-12 | 2014-06-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Logic compatible RRAM structure and process |
US9019743B2 (en) | 2012-11-29 | 2015-04-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and structure for resistive switching random access memory with high reliable and high density |
US9431604B2 (en) | 2012-12-14 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive random access memory (RRAM) and method of making |
US9130162B2 (en) | 2012-12-20 | 2015-09-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
US9023699B2 (en) | 2012-12-20 | 2015-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive random access memory (RRAM) structure and method of making the RRAM structure |
US9331277B2 (en) | 2013-01-21 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | One transistor and one resistive random access memory (RRAM) structure with spacer |
US8908415B2 (en) | 2013-03-01 | 2014-12-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive memory reset |
US8963114B2 (en) | 2013-03-06 | 2015-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | One transistor and one resistive (1T1R) random access memory (RRAM) structure with dual spacers |
US9424917B2 (en) | 2013-03-07 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for operating RRAM memory |
US8952347B2 (en) | 2013-03-08 | 2015-02-10 | Taiwan Semiconductor Manfacturing Company, Ltd. | Resistive memory cell array with top electrode bit line |
US9478638B2 (en) | 2013-03-12 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive switching random access memory with asymmetric source and drain |
US9231205B2 (en) | 2013-03-13 | 2016-01-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Low form voltage resistive random access memory (RRAM) |
US9349953B2 (en) | 2013-03-15 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
US9076522B2 (en) | 2013-09-30 | 2015-07-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory cells breakdown protection |
US9286974B2 (en) | 2013-10-23 | 2016-03-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory devices |
US9172036B2 (en) | 2013-11-22 | 2015-10-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Top electrode blocking layer for RRAM device |
US9230647B2 (en) | 2013-12-27 | 2016-01-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereof |
US9385316B2 (en) | 2014-01-07 | 2016-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM retention by depositing Ti capping layer before HK HfO |
US10003022B2 (en) | 2014-03-04 | 2018-06-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM cell structure with conductive etch-stop layer |
US9728719B2 (en) | 2014-04-25 | 2017-08-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Leakage resistant RRAM/MIM structure |
US9224470B1 (en) | 2014-08-05 | 2015-12-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Memory circuit and method of programming memory circuit |
TWI553636B (zh) | 2014-10-27 | 2016-10-11 | 國立中山大學 | 電阻式記憶體及其製作方法 |
TWI565046B (zh) * | 2014-12-02 | 2017-01-01 | 國立中山大學 | 電阻式記憶體及其製作方法 |
KR20170106974A (ko) | 2015-01-29 | 2017-09-22 | 휴렛 팩커드 엔터프라이즈 디벨롭먼트 엘피 | 저항성 메모리 장치 및 어레이 |
CN105390611B (zh) * | 2015-10-16 | 2019-01-18 | 福州大学 | 一种基于双存储介质层的低功耗阻变存储器及其制备方法 |
CN108682739A (zh) * | 2018-05-03 | 2018-10-19 | 五邑大学 | 一种金属量子点增强ZnO阻变存贮器及其制备方法 |
WO2020109991A1 (en) | 2018-11-27 | 2020-06-04 | University Of South Africa | Non-volatile resistive random access memory and a manufacturing method therefor |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4843034A (en) * | 1987-06-12 | 1989-06-27 | Massachusetts Institute Of Technology | Fabrication of interlayer conductive paths in integrated circuits |
US6136161A (en) * | 1993-11-12 | 2000-10-24 | Ppg Industries Ohio, Inc. | Fabrication of electrochromic device with plastic substrates |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
US6806526B2 (en) * | 2001-08-13 | 2004-10-19 | Advanced Micro Devices, Inc. | Memory device |
US6859382B2 (en) * | 2002-08-02 | 2005-02-22 | Unity Semiconductor Corporation | Memory array of a non-volatile ram |
JP4036073B2 (ja) * | 2002-10-21 | 2008-01-23 | 住友金属工業株式会社 | 薄膜付き石英基板 |
JP4137691B2 (ja) * | 2003-04-30 | 2008-08-20 | 株式会社リコー | 光記録媒体 |
US7141489B2 (en) * | 2003-05-20 | 2006-11-28 | Burgener Ii Robert H | Fabrication of p-type group II-VI semiconductors |
JP4082274B2 (ja) | 2003-05-22 | 2008-04-30 | 株式会社日立製作所 | 磁気センサ及びそれを備える磁気ヘッド |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
US7029924B2 (en) * | 2003-09-05 | 2006-04-18 | Sharp Laboratories Of America, Inc. | Buffered-layer memory cell |
JP2005123361A (ja) | 2003-10-16 | 2005-05-12 | Sony Corp | 抵抗変化型不揮発性メモリおよびその製造方法ならびに抵抗変化層の形成方法 |
JP4128938B2 (ja) | 2003-10-28 | 2008-07-30 | 株式会社日立製作所 | 磁気ヘッド及び磁気記録再生装置 |
KR100552704B1 (ko) * | 2003-12-17 | 2006-02-20 | 삼성전자주식회사 | 반도체 장치의 불휘발성 커패시터, 이를 포함하는 반도체메모리 소자 및 그 동작방법 |
US7085151B2 (en) * | 2004-01-13 | 2006-08-01 | Hewlett-Packard Development Company, L.P. | Storage device having a resistance measurement system |
KR101051704B1 (ko) | 2004-04-28 | 2011-07-25 | 삼성전자주식회사 | 저항 구배를 지닌 다층막을 이용한 메모리 소자 |
JP4568531B2 (ja) * | 2004-05-07 | 2010-10-27 | 三菱重工業株式会社 | 集積型太陽電池及び集積型太陽電池の製造方法 |
US7357995B2 (en) * | 2004-07-02 | 2008-04-15 | International Business Machines Corporation | Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance |
KR100781737B1 (ko) * | 2004-07-22 | 2007-12-03 | 니폰덴신뎅와 가부시키가이샤 | 쌍안정 저항값 취득장치 및 그 제조방법과 금속 산화물박막 및 그 제조방법 |
KR100657897B1 (ko) * | 2004-08-21 | 2006-12-14 | 삼성전자주식회사 | 전압 제어층을 포함하는 메모리 소자 |
JP4550552B2 (ja) * | 2004-11-02 | 2010-09-22 | 株式会社東芝 | 磁気抵抗効果素子、磁気ランダムアクセスメモリ、磁気抵抗効果素子の製造方法 |
KR100651656B1 (ko) * | 2004-11-29 | 2006-12-01 | 한국과학기술연구원 | 투명전도성 산화물 전극 접촉 재료를 갖는 상변화 메모리 셀 |
US7154769B2 (en) * | 2005-02-07 | 2006-12-26 | Spansion Llc | Memory device including barrier layer for improved switching speed and data retention |
JP4575837B2 (ja) * | 2005-05-19 | 2010-11-04 | シャープ株式会社 | 不揮発性記憶素子及びその製造方法 |
US20070069883A1 (en) * | 2005-09-23 | 2007-03-29 | Collier Bill G Jr | Product display system and container |
-
2006
- 2006-03-10 KR KR1020060022728A patent/KR101176543B1/ko active IP Right Grant
- 2006-12-18 CN CN2006101701004A patent/CN101034732B/zh active Active
-
2007
- 2007-01-17 US US11/654,003 patent/US8009454B2/en active Active
- 2007-02-28 JP JP2007050627A patent/JP5230955B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101034732B (zh) | 2011-06-01 |
KR20070092502A (ko) | 2007-09-13 |
US8009454B2 (en) | 2011-08-30 |
KR101176543B1 (ko) | 2012-08-28 |
CN101034732A (zh) | 2007-09-12 |
JP2007243183A (ja) | 2007-09-20 |
US20070215977A1 (en) | 2007-09-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5230955B2 (ja) | 抵抗性メモリ素子 | |
JP4698630B2 (ja) | 下部電極上に形成されたバッファ層を備える可変抵抗メモリ素子 | |
JP5154138B2 (ja) | n+界面層を備えた可変抵抗ランダムアクセスメモリ素子 | |
JP4938493B2 (ja) | 二つの酸化層を利用した不揮発性メモリ素子 | |
CN101106171B (zh) | 包括可变电阻材料的非易失存储器 | |
JP5213370B2 (ja) | 可変抵抗物質を含む不揮発性メモリ素子 | |
KR20090126530A (ko) | 저항성 메모리 소자 | |
KR100668348B1 (ko) | 비휘발성 메모리 소자 및 그 제조방법 | |
US8791444B2 (en) | Resistive random access memory (RRAM) using stacked dielectrics and method for manufacturing the same | |
JP2007300100A (ja) | 可変抵抗物質を含む不揮発性メモリ素子 | |
CN102412309A (zh) | 开关器件和包括所述开关器件的存储器件 | |
KR102464065B1 (ko) | 스위칭 소자, 이의 제조 방법, 스위칭 소자를 선택 소자로서 포함하는 저항 변화 메모리 장치 | |
KR20100062570A (ko) | 저항성 메모리 소자 | |
JP2007335869A (ja) | Cu2Oを含む不揮発性可変抵抗メモリ素子 | |
JP5374865B2 (ja) | 抵抗変化素子、これを用いた記憶装置、及びそれらの作製方法 | |
KR100989180B1 (ko) | 저항변화기록소자 및 그 제조방법 | |
KR20100034635A (ko) | 저항성 메모리 소자 | |
JP5215741B2 (ja) | 可変抵抗素子 | |
TWI492371B (zh) | 電阻式隨存記憶體之製作方法 | |
KR101179133B1 (ko) | 전하 충전층을 구비하는 비휘발성 저항 변화 메모리 소자 및 그 제조 방법 | |
JP2014086692A (ja) | 不揮発性記憶素子及び不揮発性記憶素子の駆動方法 | |
KR101149436B1 (ko) | 고효율 저항 변화 기억 소자용 다층 금속 산화물 박막 구조물 및 그 제조방법 | |
JP2007273517A (ja) | 電気素子およびその製造方法 | |
KR20090041794A (ko) | 상온 공정에 의한 저항 변화 기억 소자용 박막 구조물의제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20090824 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090908 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091203 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20101228 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110322 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120314 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20120322 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20120601 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130131 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130321 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160329 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5230955 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |