JP5219346B2 - イメージセンサ - Google Patents
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- JP5219346B2 JP5219346B2 JP2006187045A JP2006187045A JP5219346B2 JP 5219346 B2 JP5219346 B2 JP 5219346B2 JP 2006187045 A JP2006187045 A JP 2006187045A JP 2006187045 A JP2006187045 A JP 2006187045A JP 5219346 B2 JP5219346 B2 JP 5219346B2
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- 238000009792 diffusion process Methods 0.000 description 17
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- 150000002500 ions Chemical class 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 229910052785 arsenic Inorganic materials 0.000 description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 6
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- 229910015900 BF3 Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- 230000014509 gene expression Effects 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14689—MOS based technologies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
Chin−Chun Wang、MIT、"The Effect of Hot Carrier on the operation of CMOS Active Pixel Sensor"、(米国)、IEDM Technical Digest、2001年、p.563−566
図3乃至図8は本発明の実施形態1に係るイメージセンサを製造する方法を説明するために図2のA-A'に沿って切断した断面図である。
図10は本発明の第2実施形態に係るイメージセンサを製造する方法を説明するために図2のA-A'に沿って切断した断面図である。
200 半導体基板
200A、200B アクティブパターン
210 フィールド酸化膜
220 ゲート絶縁膜
230 トランスファゲート(Tg)
240 フローティングディフュージョン領域(FD)
250 リセットゲート(Rg)
260 ソースフォロワーゲート(Dg)
270 セレクトゲート(Sg)
300 第1イオン注入マスク
310、410、610、810 不純物イオン
320 フォトダイオード
330 イオン
340 HAD領域
400 第2イオン注入マスク
420tr、420rd、420ds、420so 低濃度領域
500t、500r1、500r2、500d1、500d2、500s1、500s2 スペーサ
510 ブロッキング層
600A、600B、600C、800A、800B 第3イオン注入マスク
620TR、620RD、620DS、620SO、820TR、820RD、820DS、820SO 高濃度領域
720 層間絶縁膜
740、742、744、746、748 金属配線
Claims (3)
- 光感知素子と、
ゲート、及び、その片側が前記光感知素子に連結され、他の片側に前記ゲートに近接した低濃度領域と前記低濃度領域の外側に配置された高濃度領域からなる不純物領域を有し、前記他の片側のゲート側壁にスペーサが形成されたトランスファトランジスタと、
前記トランスファトランジスタに連結され、各々がゲート及びその両側に前記ゲートに近接した低濃度領域と前記低濃度領域の外側に配置された高濃度領域からなる不純物領域を有し、ゲート側壁にスペーサが形成された、リセットトランジスタ、ソースフォロワートランジスタ及びセレクトトランジスタを含み、
前記トランスファトランジスタのゲート片側の高濃度領域、及び、前記リセットトランジスタ及びセレクトトランジスタのゲート両側の高濃度領域はスペーサに自己整列され、
前記ソースフォロワートランジスタはそのゲート両側に互いに幅が異なる低濃度領域を備え、幅が狭い低濃度領域に結合した高濃度領域はスペーサに自己整列され、幅が広い低濃度領域に結合した高濃度領域はそのゲート側壁のスペーサから離隔されて形成され、
前記高濃度領域に配線が接続されることを特徴とするイメージセンサ。 - 前記ソースフォロワートランジスタのゲート両側の前記低濃度領域のうち相対的に高い電圧が印加される低濃度領域の幅が大きいことを特徴とする請求項1に記載のイメージセンサ。
- 前記低濃度領域の各々は前記ゲートに自己整列されて形成されたことを特徴とする請求項1または2に記載のイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050063392A KR100660549B1 (ko) | 2005-07-13 | 2005-07-13 | 이미지 센서 및 그 제조 방법 |
KR10-2005-0063392 | 2005-07-13 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2007027714A JP2007027714A (ja) | 2007-02-01 |
JP2007027714A5 JP2007027714A5 (ja) | 2009-08-20 |
JP5219346B2 true JP5219346B2 (ja) | 2013-06-26 |
Family
ID=37660894
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006187045A Active JP5219346B2 (ja) | 2005-07-13 | 2006-07-06 | イメージセンサ |
Country Status (3)
Country | Link |
---|---|
US (1) | US7772624B2 (ja) |
JP (1) | JP5219346B2 (ja) |
KR (1) | KR100660549B1 (ja) |
Families Citing this family (21)
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US9398152B2 (en) * | 2004-02-25 | 2016-07-19 | Avaya Inc. | Using business rules for determining presence |
KR20080008719A (ko) * | 2006-07-21 | 2008-01-24 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서 및 그 제조 방법 |
US7795655B2 (en) * | 2006-10-04 | 2010-09-14 | Sony Corporation | Solid-state imaging device and electronic device |
JP2008166361A (ja) * | 2006-12-27 | 2008-07-17 | Sony Corp | 半導体素子及び固体撮像装置並びに撮像装置 |
KR100832721B1 (ko) * | 2006-12-27 | 2008-05-28 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR100929349B1 (ko) * | 2007-01-30 | 2009-12-03 | 삼성전자주식회사 | 유기물 컬러 필터를 포함하지 않는 컬러 픽셀, 이미지 센서, 및 컬러 보간방법 |
US7858914B2 (en) | 2007-11-20 | 2010-12-28 | Aptina Imaging Corporation | Method and apparatus for reducing dark current and hot pixels in CMOS image sensors |
KR20100036034A (ko) * | 2008-09-29 | 2010-04-07 | 크로스텍 캐피탈, 엘엘씨 | 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법 |
JP5444694B2 (ja) | 2008-11-12 | 2014-03-19 | ソニー株式会社 | 固体撮像装置、その製造方法および撮像装置 |
CN102136483A (zh) * | 2010-01-22 | 2011-07-27 | 中芯国际集成电路制造(上海)有限公司 | Cmos图像传感器的制作方法 |
JP5651976B2 (ja) | 2010-03-26 | 2015-01-14 | ソニー株式会社 | 固体撮像素子およびその製造方法、並びに電子機器 |
JP5960961B2 (ja) * | 2010-11-16 | 2016-08-02 | キヤノン株式会社 | 固体撮像素子及び撮像システム |
US8946795B2 (en) * | 2011-03-17 | 2015-02-03 | Omnivision Technologies, Inc. | Backside-illuminated (BSI) image sensor with reduced blooming and electrical shutter |
JP2015130447A (ja) * | 2014-01-08 | 2015-07-16 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP2015130446A (ja) * | 2014-01-08 | 2015-07-16 | キヤノン株式会社 | 固体撮像装置の製造方法 |
US9853148B2 (en) * | 2016-02-02 | 2017-12-26 | Taiwan Semiconductor Manufacturing Company Ltd. | Power MOSFETs and methods for manufacturing the same |
JP7013119B2 (ja) * | 2016-07-21 | 2022-01-31 | キヤノン株式会社 | 固体撮像素子、固体撮像素子の製造方法、及び撮像システム |
KR20230111786A (ko) | 2022-01-19 | 2023-07-26 | 주식회사 디비하이텍 | 후면조사형 이미지 센서 및 제조방법 |
KR20240046947A (ko) | 2022-10-04 | 2024-04-12 | 주식회사 디비하이텍 | 후면조사형 이미지 센서 및 제조방법 |
KR20240047586A (ko) | 2022-10-05 | 2024-04-12 | 주식회사 디비하이텍 | 전면조사형 이미지 센서 및 제조방법 |
KR20240047587A (ko) | 2022-10-05 | 2024-04-12 | 주식회사 디비하이텍 | 후면조사형 이미지 센서 및 제조방법 |
Family Cites Families (16)
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JPH05291550A (ja) | 1992-04-08 | 1993-11-05 | Fujitsu Ltd | 固体撮像装置及びその製造方法 |
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JPH09266255A (ja) * | 1996-03-28 | 1997-10-07 | Sony Corp | 半導体装置の製造方法 |
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-
2005
- 2005-07-13 KR KR1020050063392A patent/KR100660549B1/ko active IP Right Grant
-
2006
- 2006-06-28 US US11/426,974 patent/US7772624B2/en active Active
- 2006-07-06 JP JP2006187045A patent/JP5219346B2/ja active Active
Also Published As
Publication number | Publication date |
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US7772624B2 (en) | 2010-08-10 |
JP2007027714A (ja) | 2007-02-01 |
KR100660549B1 (ko) | 2006-12-22 |
US20070012966A1 (en) | 2007-01-18 |
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