JP5217239B2 - 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 - Google Patents
露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 Download PDFInfo
- Publication number
- JP5217239B2 JP5217239B2 JP2007132800A JP2007132800A JP5217239B2 JP 5217239 B2 JP5217239 B2 JP 5217239B2 JP 2007132800 A JP2007132800 A JP 2007132800A JP 2007132800 A JP2007132800 A JP 2007132800A JP 5217239 B2 JP5217239 B2 JP 5217239B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid
- substrate
- exposure
- cleaning
- during
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007132800A JP5217239B2 (ja) | 2006-05-18 | 2007-05-18 | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006139614 | 2006-05-18 | ||
| JP2006139614 | 2006-05-18 | ||
| JP2006140957 | 2006-05-19 | ||
| JP2006140957 | 2006-05-19 | ||
| JP2007103343 | 2007-04-10 | ||
| JP2007103343 | 2007-04-10 | ||
| JP2007132800A JP5217239B2 (ja) | 2006-05-18 | 2007-05-18 | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012080199A Division JP2012164992A (ja) | 2006-05-18 | 2012-03-30 | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008283156A JP2008283156A (ja) | 2008-11-20 |
| JP5217239B2 true JP5217239B2 (ja) | 2013-06-19 |
Family
ID=38723302
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007132800A Expired - Fee Related JP5217239B2 (ja) | 2006-05-18 | 2007-05-18 | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
| JP2012080199A Pending JP2012164992A (ja) | 2006-05-18 | 2012-03-30 | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012080199A Pending JP2012164992A (ja) | 2006-05-18 | 2012-03-30 | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8514366B2 (enExample) |
| EP (1) | EP2037486A4 (enExample) |
| JP (2) | JP5217239B2 (enExample) |
| KR (1) | KR20090018024A (enExample) |
| CN (2) | CN102298274A (enExample) |
| SG (1) | SG175671A1 (enExample) |
| TW (1) | TW200805000A (enExample) |
| WO (1) | WO2007135990A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11667125B2 (en) | 2018-07-13 | 2023-06-06 | Hewlett-Packard Development Company, L.P. | Print liquid supply |
| US11981143B2 (en) | 2018-07-13 | 2024-05-14 | Hewlett-Packard Development Company, L.P. | Print liquid supply |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US8125610B2 (en) | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| WO2007066692A1 (ja) * | 2005-12-06 | 2007-06-14 | Nikon Corporation | 露光方法、露光装置、及びデバイス製造方法 |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| KR20090033170A (ko) * | 2006-06-30 | 2009-04-01 | 가부시키가이샤 니콘 | 메인터넌스 방법, 노광 방법 및 장치 및 디바이스 제조 방법 |
| US9013672B2 (en) | 2007-05-04 | 2015-04-21 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
| US9019466B2 (en) | 2007-07-24 | 2015-04-28 | Asml Netherlands B.V. | Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system |
| US7916269B2 (en) | 2007-07-24 | 2011-03-29 | Asml Netherlands B.V. | Lithographic apparatus and contamination removal or prevention method |
| NL1035942A1 (nl) | 2007-09-27 | 2009-03-30 | Asml Netherlands Bv | Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus. |
| SG151198A1 (en) | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
| NL1036273A1 (nl) | 2007-12-18 | 2009-06-19 | Asml Netherlands Bv | Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus. |
| NL1036306A1 (nl) | 2007-12-20 | 2009-06-23 | Asml Netherlands Bv | Lithographic apparatus and in-line cleaning apparatus. |
| US8339572B2 (en) | 2008-01-25 | 2012-12-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2009182110A (ja) * | 2008-01-30 | 2009-08-13 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
| JP2009295933A (ja) | 2008-06-09 | 2009-12-17 | Canon Inc | ダミー露光基板及びその製造方法、液浸露光装置、並びに、デバイス製造方法 |
| JP2010103363A (ja) * | 2008-10-24 | 2010-05-06 | Nec Electronics Corp | 液浸露光装置の洗浄方法、ダミーウェハ、及び液浸露光装置 |
| JPWO2010050240A1 (ja) * | 2008-10-31 | 2012-03-29 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| NL2004540A (en) * | 2009-05-14 | 2010-11-18 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| JP2010278299A (ja) * | 2009-05-29 | 2010-12-09 | Nikon Corp | 露光装置、露光方法、及びデバイス製造方法 |
| NL2005167A (en) * | 2009-10-02 | 2011-04-05 | Asml Netherlands Bv | Lithographic apparatus and a method of operating the apparatus. |
| NL2005610A (en) | 2009-12-02 | 2011-06-06 | Asml Netherlands Bv | Lithographic apparatus and surface cleaning method. |
| KR101591138B1 (ko) * | 2009-12-18 | 2016-02-02 | 가부시키가이샤 니콘 | 기판 처리 장치의 메인터넌스 방법 및 안전 장치 |
| KR20130083901A (ko) * | 2010-07-20 | 2013-07-23 | 가부시키가이샤 니콘 | 노광 방법, 노광 장치 및 세정 방법 |
| US20120057139A1 (en) * | 2010-08-04 | 2012-03-08 | Nikon Corporation | Cleaning method, device manufacturing method, cleaning substrate, liquid immersion member, liquid immersion exposure apparatus, and dummy substrate |
| US20120188521A1 (en) * | 2010-12-27 | 2012-07-26 | Nikon Corporation | Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium |
| NL2008183A (en) * | 2011-02-25 | 2012-08-28 | Asml Netherlands Bv | A lithographic apparatus, a method of controlling the apparatus and a device manufacturing method. |
| US20130057837A1 (en) * | 2011-04-06 | 2013-03-07 | Nikon Corporation | Exposure apparatus, exposure method, device-manufacturing method, program, and recording medium |
| TWI503553B (zh) * | 2011-10-19 | 2015-10-11 | Johnstech Int Corp | 用於微電路測試器的導電開爾文接觸件 |
| KR102071873B1 (ko) * | 2012-12-27 | 2020-02-03 | 삼성디스플레이 주식회사 | 용매 제거장치 및 이를 포함하는 포토리소그래피 장치 |
| KR101573450B1 (ko) * | 2014-07-17 | 2015-12-11 | 주식회사 아이에스시 | 테스트용 소켓 |
| JP6456476B2 (ja) | 2014-08-07 | 2019-01-23 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及びデバイスを製造する方法 |
| WO2017084797A1 (en) * | 2015-11-20 | 2017-05-26 | Asml Netherlands B.V. | Lithographic apparatus and method of operating a lithographic apparatus |
| KR102614546B1 (ko) | 2018-11-09 | 2023-12-14 | 에이에스엠엘 홀딩 엔.브이. | 리소그래피 장치 내의 지지부를 청결하게 하는 장치 및 방법 |
Family Cites Families (81)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57117238A (en) | 1981-01-14 | 1982-07-21 | Nippon Kogaku Kk <Nikon> | Exposing and baking device for manufacturing integrated circuit with illuminometer |
| US4780617A (en) | 1984-08-09 | 1988-10-25 | Nippon Kogaku K.K. | Method for successive alignment of chip patterns on a substrate |
| JPS6144429A (ja) | 1984-08-09 | 1986-03-04 | Nippon Kogaku Kk <Nikon> | 位置合わせ方法、及び位置合せ装置 |
| JP3200874B2 (ja) | 1991-07-10 | 2001-08-20 | 株式会社ニコン | 投影露光装置 |
| US5243195A (en) | 1991-04-25 | 1993-09-07 | Nikon Corporation | Projection exposure apparatus having an off-axis alignment system and method of alignment therefor |
| US5559582A (en) * | 1992-08-28 | 1996-09-24 | Nikon Corporation | Exposure apparatus |
| JPH08313842A (ja) | 1995-05-15 | 1996-11-29 | Nikon Corp | 照明光学系および該光学系を備えた露光装置 |
| JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
| AU5067898A (en) | 1996-11-28 | 1998-06-22 | Nikon Corporation | Aligner and method for exposure |
| JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
| WO1998028665A1 (en) | 1996-12-24 | 1998-07-02 | Koninklijke Philips Electronics N.V. | Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device |
| JPH1116816A (ja) | 1997-06-25 | 1999-01-22 | Nikon Corp | 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法 |
| JPH1123692A (ja) | 1997-06-30 | 1999-01-29 | Sekisui Chem Co Ltd | 地中探査用アンテナ |
| JPH1128790A (ja) | 1997-07-09 | 1999-02-02 | Asahi Chem Ind Co Ltd | 紫外線遮蔽用熱可塑性樹脂板 |
| JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
| US6020964A (en) | 1997-12-02 | 2000-02-01 | Asm Lithography B.V. | Interferometer system and lithograph apparatus including an interferometer system |
| US6897963B1 (en) | 1997-12-18 | 2005-05-24 | Nikon Corporation | Stage device and exposure apparatus |
| JP4264676B2 (ja) | 1998-11-30 | 2009-05-20 | 株式会社ニコン | 露光装置及び露光方法 |
| US6208407B1 (en) | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
| IL138374A (en) | 1998-03-11 | 2004-07-25 | Nikon Corp | An ultraviolet laser device and an exposure device that includes such a device |
| AU2747999A (en) | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| AU3849199A (en) | 1998-05-19 | 1999-12-06 | Nikon Corporation | Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method |
| WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
| US20020041377A1 (en) | 2000-04-25 | 2002-04-11 | Nikon Corporation | Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method |
| JP2002014005A (ja) | 2000-04-25 | 2002-01-18 | Nikon Corp | 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置 |
| US6611316B2 (en) | 2001-02-27 | 2003-08-26 | Asml Holding N.V. | Method and system for dual reticle image exposure |
| TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
| EP1437408A4 (en) | 2001-09-17 | 2006-08-23 | Takeshi Imanishi | NOVEL ANTISENSE OLIGONUCLEOTIDE DERIVATIVES AGAINST HEPATITIS C VIRUS |
| JP2005508178A (ja) | 2001-11-08 | 2005-03-31 | デヴェロゲン アクチエンゲゼルシャフト フュア エントヴィックルングスビオローギッシェ フォルシュング | エネルギー恒常性の調節に関与するMenタンパク質、GST2、Rab−RP1、Csp、F−ボックスタンパク質Lilina/FBL7、ABC50、コロニン、Sec61α、またはVhaPPA1−1、または相同性タンパク質 |
| JP4214729B2 (ja) | 2002-07-25 | 2009-01-28 | コニカミノルタホールディングス株式会社 | 硬化性白インク組成物 |
| JP2005536775A (ja) | 2002-08-23 | 2005-12-02 | 株式会社ニコン | 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法 |
| US6893629B2 (en) | 2002-10-30 | 2005-05-17 | Isp Investments Inc. | Delivery system for a tooth whitener |
| EP2495613B1 (en) | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
| TWI232357B (en) | 2002-11-12 | 2005-05-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| AU2003289271A1 (en) * | 2002-12-10 | 2004-06-30 | Nikon Corporation | Exposure apparatus, exposure method and method for manufacturing device |
| WO2004055803A1 (en) | 2002-12-13 | 2004-07-01 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
| DE60314668T2 (de) | 2002-12-19 | 2008-03-06 | Koninklijke Philips Electronics N.V. | Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts |
| ES2268450T3 (es) | 2002-12-19 | 2007-03-16 | Koninklijke Philips Electronics N.V. | Metodo y dispositivo para irradiar puntos en una capa. |
| SG183572A1 (en) | 2003-02-26 | 2012-09-27 | Nikon Corp | Exposure apparatus, exposure method, and method for producing device |
| JP2004304135A (ja) | 2003-04-01 | 2004-10-28 | Nikon Corp | 露光装置、露光方法及びマイクロデバイスの製造方法 |
| KR20190007532A (ko) | 2003-04-11 | 2019-01-22 | 가부시키가이샤 니콘 | 액침 리소그래피에 의한 광학기기의 세정방법 |
| TWI616932B (zh) | 2003-05-23 | 2018-03-01 | Nikon Corp | Exposure device and component manufacturing method |
| JP2005277363A (ja) * | 2003-05-23 | 2005-10-06 | Nikon Corp | 露光装置及びデバイス製造方法 |
| EP2261742A3 (en) * | 2003-06-11 | 2011-05-25 | ASML Netherlands BV | Lithographic apparatus and device manufacturing method. |
| KR101520591B1 (ko) * | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| US7370659B2 (en) * | 2003-08-06 | 2008-05-13 | Micron Technology, Inc. | Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines |
| JP4305095B2 (ja) * | 2003-08-29 | 2009-07-29 | 株式会社ニコン | 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法 |
| JP4444920B2 (ja) | 2003-09-19 | 2010-03-31 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| EP1672682A4 (en) * | 2003-10-08 | 2008-10-15 | Zao Nikon Co Ltd | SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD |
| US20050122218A1 (en) | 2003-12-06 | 2005-06-09 | Goggin Christopher M. | Ranging and warning device using emitted and reflected wave energy |
| KR101200654B1 (ko) | 2003-12-15 | 2012-11-12 | 칼 짜이스 에스엠티 게엠베하 | 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈 |
| WO2005059645A2 (en) | 2003-12-19 | 2005-06-30 | Carl Zeiss Smt Ag | Microlithography projection objective with crystal elements |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| WO2005076323A1 (ja) * | 2004-02-10 | 2005-08-18 | Nikon Corporation | 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法 |
| US7898642B2 (en) | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US7616383B2 (en) * | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| WO2005119742A1 (ja) * | 2004-06-04 | 2005-12-15 | Nikon Corporation | 露光装置、露光方法及びデバイス製造方法 |
| CN103439863B (zh) * | 2004-06-09 | 2016-01-06 | 株式会社尼康 | 曝光装置、曝光方法、元件制造方法及维护方法 |
| KR101245070B1 (ko) * | 2004-06-21 | 2013-03-18 | 가부시키가이샤 니콘 | 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법 |
| JP2006013806A (ja) | 2004-06-24 | 2006-01-12 | Maspro Denkoh Corp | 信号処理装置及びcatv用ヘッドエンド装置 |
| US7463330B2 (en) * | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP2006032750A (ja) * | 2004-07-20 | 2006-02-02 | Canon Inc | 液浸型投影露光装置、及びデバイス製造方法 |
| US7224427B2 (en) * | 2004-08-03 | 2007-05-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Megasonic immersion lithography exposure apparatus and method |
| JP4534651B2 (ja) * | 2004-08-03 | 2010-09-01 | 株式会社ニコン | 露光装置、デバイス製造方法及び液体回収方法 |
| KR101337007B1 (ko) | 2004-08-03 | 2013-12-06 | 가부시키가이샤 니콘 | 노광 장치, 노광 방법 및 디바이스 제조 방법 |
| US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP4772306B2 (ja) * | 2004-09-06 | 2011-09-14 | 株式会社東芝 | 液浸光学装置及び洗浄方法 |
| JP4656448B2 (ja) | 2004-09-30 | 2011-03-23 | 株式会社ニコン | 投影光学装置及び露光装置 |
| TWI436403B (zh) * | 2004-10-26 | 2014-05-01 | 尼康股份有限公司 | A cleaning method, a substrate processing method, an exposure apparatus, and an element manufacturing method |
| US8330939B2 (en) * | 2004-11-01 | 2012-12-11 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method with a liquid recovery port provided on at least one of a first stage and second stage |
| US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
| US7732123B2 (en) * | 2004-11-23 | 2010-06-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion photolithography with megasonic rinse |
| JP4784513B2 (ja) * | 2004-12-06 | 2011-10-05 | 株式会社ニコン | メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法 |
| JP4752473B2 (ja) * | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| US7880860B2 (en) * | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| US20060250588A1 (en) * | 2005-05-03 | 2006-11-09 | Stefan Brandl | Immersion exposure tool cleaning system and method |
| WO2006122578A1 (en) | 2005-05-17 | 2006-11-23 | Freescale Semiconductor, Inc. | Contaminant removal apparatus and method therefor |
| US7986395B2 (en) * | 2005-10-24 | 2011-07-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion lithography apparatus and methods |
| US8125610B2 (en) * | 2005-12-02 | 2012-02-28 | ASML Metherlands B.V. | Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus |
| US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
| US8564759B2 (en) * | 2006-06-29 | 2013-10-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for immersion lithography |
-
2007
- 2007-05-18 CN CN2011102517818A patent/CN102298274A/zh active Pending
- 2007-05-18 CN CN200780011033.4A patent/CN101410948B/zh not_active Expired - Fee Related
- 2007-05-18 EP EP07743663A patent/EP2037486A4/en not_active Withdrawn
- 2007-05-18 SG SG2011077435A patent/SG175671A1/en unknown
- 2007-05-18 KR KR1020087024125A patent/KR20090018024A/ko not_active Ceased
- 2007-05-18 TW TW096117939A patent/TW200805000A/zh unknown
- 2007-05-18 WO PCT/JP2007/060228 patent/WO2007135990A1/ja not_active Ceased
- 2007-05-18 JP JP2007132800A patent/JP5217239B2/ja not_active Expired - Fee Related
-
2008
- 2008-10-21 US US12/289,148 patent/US8514366B2/en not_active Expired - Fee Related
-
2012
- 2012-03-30 JP JP2012080199A patent/JP2012164992A/ja active Pending
-
2013
- 2013-07-16 US US13/943,207 patent/US20130301019A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11667125B2 (en) | 2018-07-13 | 2023-06-06 | Hewlett-Packard Development Company, L.P. | Print liquid supply |
| US11981143B2 (en) | 2018-07-13 | 2024-05-14 | Hewlett-Packard Development Company, L.P. | Print liquid supply |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012164992A (ja) | 2012-08-30 |
| KR20090018024A (ko) | 2009-02-19 |
| US20090066922A1 (en) | 2009-03-12 |
| CN102298274A (zh) | 2011-12-28 |
| TW200805000A (en) | 2008-01-16 |
| EP2037486A1 (en) | 2009-03-18 |
| SG175671A1 (en) | 2011-11-28 |
| CN101410948A (zh) | 2009-04-15 |
| EP2037486A4 (en) | 2012-01-11 |
| CN101410948B (zh) | 2011-10-26 |
| JP2008283156A (ja) | 2008-11-20 |
| US8514366B2 (en) | 2013-08-20 |
| WO2007135990A1 (ja) | 2007-11-29 |
| US20130301019A1 (en) | 2013-11-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5217239B2 (ja) | 露光方法及び装置、メンテナンス方法、並びにデバイス製造方法 | |
| JP5019170B2 (ja) | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 | |
| JP5245825B2 (ja) | メンテナンス方法、露光方法及び装置、並びにデバイス製造方法 | |
| EP1670039B1 (en) | Exposure apparatus and device producing method | |
| KR101169288B1 (ko) | 노광 장치, 노광 방법 및 디바이스 제조 방법 | |
| JP2018049295A (ja) | 露光装置及びデバイス製造方法 | |
| WO2007066758A1 (ja) | 基板保持装置、露光装置、露光方法、及びデバイス製造方法 | |
| JPWO2011046174A1 (ja) | 露光装置、露光方法、メンテナンス方法、及びデバイス製造方法 | |
| JP2011029326A (ja) | 露光装置、メンテナンス方法、及びデバイス製造方法 | |
| HK1128826A (en) | Exposure method and apparatus, maintenance method and device manufacturing method | |
| JP2013045924A (ja) | 露光装置、クリーニング方法、デバイス製造方法、プログラム、及び記録媒体 | |
| JP2011018743A (ja) | 露光装置、クリーニング方法、及びデバイス製造方法 | |
| HK1124458A (en) | Maintenance method, exposure method and apparatus and device manufacturing method | |
| HK1129494A (en) | Maintenance method, exposure method and apparatus, and device manufacturing method | |
| JP2011108735A (ja) | 洗浄部材、露光装置、洗浄方法、及びデバイス製造方法 | |
| JP2011071253A (ja) | 露光装置、クリーニング方法、及びデバイス製造方法 | |
| JP2007311671A (ja) | 露光方法及び装置、並びにデバイス製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100325 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110301 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120313 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120508 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130205 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130218 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160315 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 5217239 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |