KR20090018024A - 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 - Google Patents

노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 Download PDF

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KR20090018024A
KR20090018024A KR1020087024125A KR20087024125A KR20090018024A KR 20090018024 A KR20090018024 A KR 20090018024A KR 1020087024125 A KR1020087024125 A KR 1020087024125A KR 20087024125 A KR20087024125 A KR 20087024125A KR 20090018024 A KR20090018024 A KR 20090018024A
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liquid
substrate
cleaning
exposure
stage
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Korean (ko)
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가츠시 나카노
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가부시키가이샤 니콘
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020087024125A 2006-05-18 2007-05-18 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법 Ceased KR20090018024A (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JPJP-P-2006-139614 2006-05-18
JP2006139614 2006-05-18
JP2006140957 2006-05-19
JPJP-P-2006-140957 2006-05-19
JPJP-P-2007-103343 2007-04-10
JP2007103343 2007-04-10

Publications (1)

Publication Number Publication Date
KR20090018024A true KR20090018024A (ko) 2009-02-19

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KR1020087024125A Ceased KR20090018024A (ko) 2006-05-18 2007-05-18 노광 방법 및 장치, 메인터넌스 방법, 그리고 디바이스 제조 방법

Country Status (8)

Country Link
US (2) US8514366B2 (enExample)
EP (1) EP2037486A4 (enExample)
JP (2) JP5217239B2 (enExample)
KR (1) KR20090018024A (enExample)
CN (2) CN102298274A (enExample)
SG (1) SG175671A1 (enExample)
TW (1) TW200805000A (enExample)
WO (1) WO2007135990A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101476347B1 (ko) * 2011-02-25 2014-12-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 리소그래피 장치를 제어하는 방법 및 디바이스 제조 방법

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
KR20080071552A (ko) * 2005-12-06 2008-08-04 가부시키가이샤 니콘 노광 방법, 노광 장치 및 디바이스 제조 방법
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
WO2008001871A1 (en) * 2006-06-30 2008-01-03 Nikon Corporation Maintenance method, exposure method and apparatus and device manufacturing method
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9013672B2 (en) 2007-05-04 2015-04-21 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7916269B2 (en) 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US20090025753A1 (en) 2007-07-24 2009-01-29 Asml Netherlands B.V. Lithographic Apparatus And Contamination Removal Or Prevention Method
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
NL1035942A1 (nl) 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009182110A (ja) * 2008-01-30 2009-08-13 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
JP2009295933A (ja) * 2008-06-09 2009-12-17 Canon Inc ダミー露光基板及びその製造方法、液浸露光装置、並びに、デバイス製造方法
JP2010103363A (ja) * 2008-10-24 2010-05-06 Nec Electronics Corp 液浸露光装置の洗浄方法、ダミーウェハ、及び液浸露光装置
US20100283979A1 (en) * 2008-10-31 2010-11-11 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
NL2004540A (en) 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
JP2010278299A (ja) * 2009-05-29 2010-12-09 Nikon Corp 露光装置、露光方法、及びデバイス製造方法
NL2005167A (en) 2009-10-02 2011-04-05 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
WO2011074649A1 (ja) * 2009-12-18 2011-06-23 株式会社ニコン 基板処理装置のメンテナンス方法および安全装置
KR20130083901A (ko) * 2010-07-20 2013-07-23 가부시키가이샤 니콘 노광 방법, 노광 장치 및 세정 방법
US20120057139A1 (en) * 2010-08-04 2012-03-08 Nikon Corporation Cleaning method, device manufacturing method, cleaning substrate, liquid immersion member, liquid immersion exposure apparatus, and dummy substrate
US20120188521A1 (en) * 2010-12-27 2012-07-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium
US20130057837A1 (en) * 2011-04-06 2013-03-07 Nikon Corporation Exposure apparatus, exposure method, device-manufacturing method, program, and recording medium
TWI503553B (zh) * 2011-10-19 2015-10-11 Johnstech Int Corp 用於微電路測試器的導電開爾文接觸件
KR102071873B1 (ko) * 2012-12-27 2020-02-03 삼성디스플레이 주식회사 용매 제거장치 및 이를 포함하는 포토리소그래피 장치
KR101573450B1 (ko) * 2014-07-17 2015-12-11 주식회사 아이에스시 테스트용 소켓
NL2015049A (en) 2014-08-07 2016-07-08 Asml Netherlands Bv A lithography apparatus, a method of manufacturing a device and a control program.
SG11201804115UA (en) * 2015-11-20 2018-06-28 Asml Netherlands Bv Lithographic apparatus and method of operating a lithographic apparatus
CN111629905A (zh) 2018-07-13 2020-09-04 惠普发展公司,有限责任合伙企业 打印液体供应
ES2937063T3 (es) 2018-07-13 2023-03-23 Hewlett Packard Development Co Suministro de líquido de impresión
US11480885B2 (en) 2018-11-09 2022-10-25 Asml Holding N. V. Apparatus for and method cleaning a support inside a lithography apparatus

Family Cites Families (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
US4780617A (en) 1984-08-09 1988-10-25 Nippon Kogaku K.K. Method for successive alignment of chip patterns on a substrate
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JP3200874B2 (ja) 1991-07-10 2001-08-20 株式会社ニコン 投影露光装置
US5243195A (en) 1991-04-25 1993-09-07 Nikon Corporation Projection exposure apparatus having an off-axis alignment system and method of alignment therefor
US5559582A (en) * 1992-08-28 1996-09-24 Nikon Corporation Exposure apparatus
JPH08313842A (ja) 1995-05-15 1996-11-29 Nikon Corp 照明光学系および該光学系を備えた露光装置
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH1123692A (ja) 1997-06-30 1999-01-29 Sekisui Chem Co Ltd 地中探査用アンテナ
JPH1128790A (ja) 1997-07-09 1999-02-02 Asahi Chem Ind Co Ltd 紫外線遮蔽用熱可塑性樹脂板
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
US6020964A (en) 1997-12-02 2000-02-01 Asm Lithography B.V. Interferometer system and lithograph apparatus including an interferometer system
JP4264676B2 (ja) 1998-11-30 2009-05-20 株式会社ニコン 露光装置及び露光方法
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
EP1063742A4 (en) 1998-03-11 2005-04-20 Nikon Corp ULTRAVIOLET LASER DEVICE AND EXPOSURE APPARATUS COMPRISING SUCH A ULTRAVIOLET LASER DEVICE
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
AU3849199A (en) 1998-05-19 1999-12-06 Nikon Corporation Aberration measuring instrument and measuring method, projection exposure apparatus provided with the instrument and device-manufacturing method using the measuring method, and exposure method
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
WO2002069049A2 (en) 2001-02-27 2002-09-06 Asml Us, Inc. Simultaneous imaging of two reticles
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JPWO2003025173A1 (ja) 2001-09-17 2004-12-24 武 今西 C型肝炎ウイルスに対する新規なアンチセンスオリゴヌクレオチド誘導体
JP2005508178A (ja) 2001-11-08 2005-03-31 デヴェロゲン アクチエンゲゼルシャフト フュア エントヴィックルングスビオローギッシェ フォルシュング エネルギー恒常性の調節に関与するMenタンパク質、GST2、Rab−RP1、Csp、F−ボックスタンパク質Lilina/FBL7、ABC50、コロニン、Sec61α、またはVhaPPA1−1、または相同性タンパク質
JP4214729B2 (ja) 2002-07-25 2009-01-28 コニカミノルタホールディングス株式会社 硬化性白インク組成物
TWI249082B (en) 2002-08-23 2006-02-11 Nikon Corp Projection optical system and method for photolithography and exposure apparatus and method using same
US6893629B2 (en) 2002-10-30 2005-05-17 Isp Investments Inc. Delivery system for a tooth whitener
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
TWI232357B (en) 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004053956A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 露光装置及び露光方法、デバイス製造方法
ATE424026T1 (de) 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
ATE335272T1 (de) 2002-12-19 2006-08-15 Koninkl Philips Electronics Nv Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
KR101921572B1 (ko) 2003-02-26 2018-11-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2004304135A (ja) 2003-04-01 2004-10-28 Nikon Corp 露光装置、露光方法及びマイクロデバイスの製造方法
CN101825847B (zh) 2003-04-11 2013-10-16 株式会社尼康 用于沉浸式光刻光学系统的清洗方法
JP2005277363A (ja) * 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
TWI612556B (zh) 2003-05-23 2018-01-21 Nikon Corp 曝光裝置、曝光方法及元件製造方法
EP1486827B1 (en) * 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101528089B1 (ko) * 2003-06-13 2015-06-11 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US7370659B2 (en) * 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
JP4305095B2 (ja) * 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
EP1672682A4 (en) 2003-10-08 2008-10-15 Zao Nikon Co Ltd SUBSTRATE TRANSPORT DEVICE AND METHOD, EXPOSURE DEVICE AND METHOD AND COMPONENT MANUFACTURING METHOD
US20050122218A1 (en) 2003-12-06 2005-06-09 Goggin Christopher M. Ranging and warning device using emitted and reflected wave energy
EP1697798A2 (en) 2003-12-15 2006-09-06 Carl Zeiss SMT AG Projection objective having a high aperture and a planar end surface
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005076323A1 (ja) * 2004-02-10 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1954408B (zh) * 2004-06-04 2012-07-04 尼康股份有限公司 曝光装置、曝光方法及元件制造方法
KR101162128B1 (ko) 2004-06-09 2012-07-03 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101245070B1 (ko) * 2004-06-21 2013-03-18 가부시키가이샤 니콘 노광 장치 및 그 부재의 세정 방법, 노광 장치의 메인터넌스 방법, 메인터넌스 기기, 그리고 디바이스 제조 방법
JP2006013806A (ja) 2004-06-24 2006-01-12 Maspro Denkoh Corp 信号処理装置及びcatv用ヘッドエンド装置
US7463330B2 (en) * 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US8169591B2 (en) 2004-08-03 2012-05-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP4534651B2 (ja) * 2004-08-03 2010-09-01 株式会社ニコン 露光装置、デバイス製造方法及び液体回収方法
US7701550B2 (en) * 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
CN101052916B (zh) 2004-09-30 2010-05-12 株式会社尼康 投影光学设备和曝光装置
JP4665712B2 (ja) * 2004-10-26 2011-04-06 株式会社ニコン 基板処理方法、露光装置及びデバイス製造方法
KR101318037B1 (ko) * 2004-11-01 2013-10-14 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7362412B2 (en) * 2004-11-18 2008-04-22 International Business Machines Corporation Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
WO2006062065A1 (ja) * 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
WO2006122578A1 (en) 2005-05-17 2006-11-23 Freescale Semiconductor, Inc. Contaminant removal apparatus and method therefor
US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101476347B1 (ko) * 2011-02-25 2014-12-24 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 리소그래피 장치를 제어하는 방법 및 디바이스 제조 방법

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JP2012164992A (ja) 2012-08-30
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EP2037486A1 (en) 2009-03-18
US20090066922A1 (en) 2009-03-12
SG175671A1 (en) 2011-11-28
US8514366B2 (en) 2013-08-20
CN101410948B (zh) 2011-10-26
TW200805000A (en) 2008-01-16
US20130301019A1 (en) 2013-11-14

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