JP5216446B2 - プラズマｃｖｄ装置及び表示装置の作製方法 - Google Patents

プラズマｃｖｄ装置及び表示装置の作製方法 Download PDF

Info

Publication number
JP5216446B2
JP5216446B2 JP2008172141A JP2008172141A JP5216446B2 JP 5216446 B2 JP5216446 B2 JP 5216446B2 JP 2008172141 A JP2008172141 A JP 2008172141A JP 2008172141 A JP2008172141 A JP 2008172141A JP 5216446 B2 JP5216446 B2 JP 5216446B2
Authority
JP
Japan
Prior art keywords
plasma
layer
semiconductor layer
gas
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008172141A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009054996A (ja
JP2009054996A5 (enExample
Inventor
舜平 山崎
康行 荒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008172141A priority Critical patent/JP5216446B2/ja
Publication of JP2009054996A publication Critical patent/JP2009054996A/ja
Publication of JP2009054996A5 publication Critical patent/JP2009054996A5/ja
Application granted granted Critical
Publication of JP5216446B2 publication Critical patent/JP5216446B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Nonlinear Science (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Plasma Technology (AREA)
  • Electroluminescent Light Sources (AREA)
JP2008172141A 2007-07-27 2008-07-01 プラズマｃｖｄ装置及び表示装置の作製方法 Expired - Fee Related JP5216446B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008172141A JP5216446B2 (ja) 2007-07-27 2008-07-01 プラズマｃｖｄ装置及び表示装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007196189 2007-07-27
JP2007196189 2007-07-27
JP2008172141A JP5216446B2 (ja) 2007-07-27 2008-07-01 プラズマｃｖｄ装置及び表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2009054996A JP2009054996A (ja) 2009-03-12
JP2009054996A5 JP2009054996A5 (enExample) 2011-08-04
JP5216446B2 true JP5216446B2 (ja) 2013-06-19

Family

ID=40295760

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008172141A Expired - Fee Related JP5216446B2 (ja) 2007-07-27 2008-07-01 プラズマｃｖｄ装置及び表示装置の作製方法

Country Status (3)

Country Link
US (1) US8178398B2 (enExample)
JP (1) JP5216446B2 (enExample)
KR (1) KR101512758B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4719184B2 (ja) * 2007-06-01 2011-07-06 株式会社サイアン 大気圧プラズマ発生装置およびそれを用いるワーク処理装置
JP5058084B2 (ja) * 2007-07-27 2012-10-24 株式会社半導体エネルギー研究所 光電変換装置の作製方法及びマイクロ波プラズマｃｖｄ装置
JP5572307B2 (ja) 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
US8803245B2 (en) * 2008-06-30 2014-08-12 Mcafee, Inc. Method of forming stacked trench contacts and structures formed thereby
JP5632654B2 (ja) * 2009-05-29 2014-11-26 株式会社半導体エネルギー研究所 表示装置
JP5752447B2 (ja) * 2010-03-15 2015-07-22 株式会社半導体エネルギー研究所 半導体装置
US8440548B2 (en) 2010-08-06 2013-05-14 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of microcrystalline silicon film and manufacturing method of thin film transistor
US9553195B2 (en) * 2011-06-30 2017-01-24 Applied Materials, Inc. Method of IGZO and ZNO TFT fabrication with PECVD SiO2 passivation
US20120175667A1 (en) * 2011-10-03 2012-07-12 Golle Aaron J Led light disposed on a flexible substrate and connected with a printed 3d conductor
KR102377794B1 (ko) * 2015-07-06 2022-03-23 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
JP6899693B2 (ja) * 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
JP7724661B2 (ja) * 2021-08-30 2025-08-18 東京エレクトロン株式会社 成膜方法および成膜装置

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6029295B2 (ja) 1979-08-16 1985-07-10 舜平 山崎 非単結晶被膜形成法
JPS56122123A (en) 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5771126A (en) 1980-10-21 1982-05-01 Semiconductor Energy Lab Co Ltd Semiamorhous semiconductor
JPS5972781A (ja) 1982-10-20 1984-04-24 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS61241921A (ja) * 1985-04-19 1986-10-28 Hitachi Ltd プラズマ処理装置
JPS6262073A (ja) 1985-09-11 1987-03-18 Ishikawajima Harima Heavy Ind Co Ltd ポペツト弁の温度制御装置
US4760008A (en) 1986-01-24 1988-07-26 Semiconductor Energy Laboratory Co., Ltd. Electrophotographic photosensitive members and methods for manufacturing the same using microwave radiation in magnetic field
US4988642A (en) 1988-05-25 1991-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
JPH0253941A (ja) 1988-08-17 1990-02-22 Tsudakoma Corp 織機の運転装置
JP2876318B2 (ja) * 1989-01-20 1999-03-31 三洋電機株式会社 薄膜形成方法
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
US7576360B2 (en) 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
JPH0613329A (ja) * 1992-06-25 1994-01-21 Canon Inc 半導体装置及び半導体製造装置及び製造方法
US5946587A (en) 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
US6835523B1 (en) * 1993-05-09 2004-12-28 Semiconductor Energy Laboratory Co., Ltd. Apparatus for fabricating coating and method of fabricating the coating
US6183816B1 (en) 1993-07-20 2001-02-06 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the coating
JPH11103082A (ja) 1997-09-26 1999-04-13 Canon Inc 光起電力素子及びその作製方法
JP2000277439A (ja) 1999-03-25 2000-10-06 Kanegafuchi Chem Ind Co Ltd 結晶質シリコン系薄膜のプラズマｃｖｄ方法およびシリコン系薄膜光電変換装置の製造方法
EP1879213B1 (en) 1999-05-26 2012-03-14 Tokyo Electron Limited Plasma processing apparatus
JP2000353666A (ja) 1999-06-11 2000-12-19 Matsushita Electric Ind Co Ltd 半導体薄膜およびその製造方法
JP2001313257A (ja) * 2000-04-28 2001-11-09 Mitsubishi Heavy Ind Ltd 高品質シリコン系薄膜の製造方法
JP2002033307A (ja) 2000-07-17 2002-01-31 Shibaura Mechatronics Corp プラズマ発生装置及び同装置を備えたプラズマ処理装置
JP2002371357A (ja) 2001-06-14 2002-12-26 Canon Inc シリコン系薄膜の形成方法、シリコン系薄膜及び半導体素子並びにシリコン系薄膜の形成装置
TW521540B (en) 2001-10-03 2003-02-21 Hau-Ran Ni An ECR plasma reactor system with multiple exciters
JP4173679B2 (ja) * 2002-04-09 2008-10-29 エム・イー・エス・アフティ株式会社 Ｅｃｒプラズマ源およびｅｃｒプラズマ装置
JP2004014958A (ja) 2002-06-11 2004-01-15 Fuji Electric Holdings Co Ltd 薄膜多結晶太陽電池とその製造方法
JP2004336019A (ja) * 2003-04-18 2004-11-25 Advanced Lcd Technologies Development Center Co Ltd 成膜方法、半導体素子の形成方法、半導体素子、表示装置の形成方法及び表示装置
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
JP4480968B2 (ja) * 2003-07-18 2010-06-16 株式会社半導体エネルギー研究所 表示装置
TWI336921B (en) 2003-07-18 2011-02-01 Semiconductor Energy Lab Method for manufacturing semiconductor device
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
JP2005050905A (ja) 2003-07-30 2005-02-24 Sharp Corp シリコン薄膜太陽電池の製造方法
CN101452893B (zh) 2003-11-14 2011-04-13 株式会社半导体能源研究所 显示装置及其制造法
JP4393844B2 (ja) 2003-11-19 2010-01-06 東京エレクトロン株式会社 プラズマ成膜装置及びプラズマ成膜方法
JP4659377B2 (ja) 2004-03-19 2011-03-30 株式会社 液晶先端技術開発センター 絶縁膜の形成方法
JP5013393B2 (ja) 2005-03-30 2012-08-29 東京エレクトロン株式会社 プラズマ処理装置と方法
JP2006294422A (ja) * 2005-04-11 2006-10-26 Tokyo Electron Ltd プラズマ処理装置およびスロットアンテナおよびプラズマ処理方法
TWI408734B (zh) 2005-04-28 2013-09-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US7608490B2 (en) * 2005-06-02 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP4597792B2 (ja) 2005-06-27 2010-12-15 東京エレクトロン株式会社 処理ガス供給構造およびプラズマ処理装置
JP4777717B2 (ja) 2005-08-10 2011-09-21 東京エレクトロン株式会社 成膜方法、プラズマ処理装置および記録媒体
US7301215B2 (en) 2005-08-22 2007-11-27 Canon Kabushiki Kaisha Photovoltaic device
US7692610B2 (en) 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5068458B2 (ja) 2006-01-18 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP4978985B2 (ja) 2006-03-30 2012-07-18 東京エレクトロン株式会社 プラズマ処理方法
JP5364293B2 (ja) 2007-06-01 2013-12-11 株式会社半導体エネルギー研究所 表示装置の作製方法およびプラズマｃｖｄ装置
US8207010B2 (en) 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device

Also Published As

Publication number Publication date
JP2009054996A (ja) 2009-03-12
US20090029498A1 (en) 2009-01-29
KR101512758B1 (ko) 2015-04-16
KR20090012094A (ko) 2009-02-02
US8178398B2 (en) 2012-05-15

Similar Documents

Publication Publication Date Title
JP2009054996A (ja) 表示装置の作製方法
US8368075B2 (en) Plasma CVD apparatus
TWI793890B (zh) 液晶顯示裝置
TWI447915B (zh) 半導體裝置的製造方法
TWI601188B (zh) 製造微晶半導體膜的方法及製造半導體裝置的方法
JP5542277B2 (ja) 微結晶半導体膜及び薄膜トランジスタの作製方法
US7446060B2 (en) Thin-film forming method using silane and an oxidizing gas
TWI437642B (zh) 半導體裝置的製造方法
US8525170B2 (en) Thin film transistor and manufacturing method thereof
US9935183B2 (en) Multilayer passivation or etch stop TFT
CN101928935B (zh) 等离子体处理装置、薄膜制造方法和薄膜晶体管制造方法
JP4018625B2 (ja) 薄膜トランジスタのための多段階ｃｖｄ法
TWI497724B (zh) 薄膜電晶體及其製造方法
KR20090054902A (ko) 반도체장치의 제조 방법
KR101752646B1 (ko) 미결정 반도체막 및 박막 트랜지스터의 제작 방법
US20090233425A1 (en) Plasma processing apparatus and method for manufacturing semiconductor device
JP2005252012A (ja) 成膜方法、半導体素子の形成方法、半導体装置、及び表示装置
CN111883582B (zh) 一种栅极、薄膜晶体管的制作方法和显示面板
WO2013132937A1 (ja) 薄膜トランジスタの製造方法、及び表示装置の製造方法
JPH104062A (ja) 高周波プラズマｃｖｄ装置
WO2012176410A1 (ja) 薄膜トランジスタ基板の製造方法及びその製造方法により製造された薄膜トランジスタ基板、並びに半導体膜の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110616

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120127

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130108

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130207

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130226

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130304

R150 Certificate of patent or registration of utility model

Ref document number: 5216446

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160308

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160308

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees