JP2011054950A - 微結晶半導体膜及び薄膜トランジスタの作製方法 - Google Patents
微結晶半導体膜及び薄膜トランジスタの作製方法 Download PDFInfo
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- JP2011054950A JP2011054950A JP2010175049A JP2010175049A JP2011054950A JP 2011054950 A JP2011054950 A JP 2011054950A JP 2010175049 A JP2010175049 A JP 2010175049A JP 2010175049 A JP2010175049 A JP 2010175049A JP 2011054950 A JP2011054950 A JP 2011054950A
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- microcrystalline semiconductor
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02595—Microstructure polycrystalline
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
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Abstract
【解決手段】プラズマCVD装置の処理室に設けられた複数の凸部を備える電極から、シリコンまたはゲルマニウムを含む堆積性気体を導入し、高周波電力を供給し、グロー放電を発生させて、基板上に結晶粒子を形成し、該結晶粒子上にプラズマCVD法により微結晶半導体膜を形成する。
【選択図】図1
Description
本実施の形態では、結晶性の高い微結晶半導体膜の形成方法について、図1乃至図5を用いて説明する。
本実施の形態では、実施の形態1で示す形成方法を用いた微結晶半導体膜を有する薄膜トランジスタの構造について、図6を用いて説明する。
本実施の形態では、実施の形態2に示す薄膜トランジスタの一形態である図6(C)に示す薄膜トランジスタの作製方法について図7乃至図11を参照して説明する。
本実施の形態では、実施の形態1乃至実施の形態3で示す薄膜トランジスタを用いることが可能な素子基板、及び当該素子基板を有する表示装置について、以下に示す。表示装置としては、液晶表示装置、発光表示装置、電子ペーパー等があるが、上記実施の形態の薄膜トランジスタは他の表示装置の素子基板にも用いることができる。ここでは、上記実施の形態3で示す薄膜トランジスタを有する液晶表示装置、代表的には、VA(Vertical Alignment)型の液晶表示装置について、図12及び図13を用いて説明する。
実施の形態4で示す素子基板413、455において、配向膜411を形成せず、発光素子を設けることにより、当該素子基板を発光表示装置や、発光装置に用いることができる。発光表示装置や発光装置は、発光素子として代表的には、エレクトロルミネッセンスを利用する発光素子がある。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって大別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
上記実施の形態に係る薄膜トランジスタを有する表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、電子ペーパー、デジタルカメラやデジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。特に、実施の形態4及び実施の形態5で示したように、上記実施の形態に係る薄膜トランジスタを液晶表示装置、発光装置、電気泳動方式表示装置などに適用することにより、電子機器の表示部に用いることができる。以下に具体的に例示する。
(kは解離反応速度定数、Ngasはシラン分子密度、Neは電子密度)
Claims (7)
- プラズマCVD装置の処理室に備えられ、且つ複数の凸部を有する電極の前記複数の凸部からシリコンまたはゲルマニウムを含む堆積性気体を前記処理室に導入し、高周波電力を供給して、基板上に結晶粒子を形成し、
前記結晶粒子上にプラズマCVD法により微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法。 - プラズマCVD装置の処理室に備えられ、且つ複数の凸部を有する電極の前記複数の凸部からシリコンまたはゲルマニウムを含む堆積性気体を前記処理室に導入し、高周波電力を供給し、前記複数の凸部において電子密度の高いプラズマを発生させて、基板上に結晶粒子を形成し、
前記結晶粒子上にプラズマCVD法により微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法。 - プラズマCVD装置の処理室に備えられ、且つ複数の凸部を有する電極の前記複数の凸部からシリコンまたはゲルマニウムを含む堆積性気体を前記処理室に導入し、高周波電力を供給して、基板上に結晶粒子を形成し、
前記複数の凸部の間から、シリコンまたはゲルマニウムを含む堆積性気体を前記処理室に導入し、高周波電力を供給して、前記結晶粒子上に微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法。 - プラズマCVD装置の処理室に備えられ、且つ複数の凸部を有する電極の前記複数の凸部からシリコンまたはゲルマニウムを含む堆積性気体を前記処理室に導入し、高周波電力を供給し、前記複数の凸部において電子密度の高いプラズマを発生させて、基板上に結晶粒子を形成し、
前記複数の凸部の間から、シリコンまたはゲルマニウムを含む堆積性気体を前記処理室に導入し、高周波電力を供給して、前記結晶粒子上に微結晶半導体膜を形成することを特徴とする微結晶半導体膜の作製方法。 - 請求項3または4において、前記複数の凸部の間から、シリコンまたはゲルマニウムを含む堆積性気体と共に、水素を前記処理室に導入することを特徴とする微結晶半導体膜の作製方法。
- 請求項3または4において、前記複数の凸部の間から、シリコンまたはゲルマニウムを含む堆積性気体と共に、水素及び希ガスを前記処理室に導入することを特徴とする微結晶半導体膜の作製方法。
- 請求項1乃至6のいずれか一に記載の微結晶半導体膜の作製方法を用いて、ゲート電極上に形成されたゲート絶縁膜上に微結晶半導体膜を形成し、
前記微結晶半導体膜に接続される配線を形成することを特徴とする薄膜トランジスタの作製方法。
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