JP5490515B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5490515B2 JP5490515B2 JP2009291547A JP2009291547A JP5490515B2 JP 5490515 B2 JP5490515 B2 JP 5490515B2 JP 2009291547 A JP2009291547 A JP 2009291547A JP 2009291547 A JP2009291547 A JP 2009291547A JP 5490515 B2 JP5490515 B2 JP 5490515B2
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- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Electroluminescent Light Sources (AREA)
Description
本実施の形態では、薄膜トランジスタの作製方法について、図1乃至図9を用いて示す。薄膜トランジスタは、p型よりもn型の方が、キャリアの移動度が高い。また、同一の基板上に形成する薄膜トランジスタを全て同じ極性に統一すると、工程数を抑えることができ、好ましい。そのため、本実施の形態では、n型の薄膜トランジスタの作製方法について説明する。
本実施の形態では、窒素を含む絶縁層104、酸化シリコン層105、第1の半導体層106、第2の半導体層、及び不純物半導体層109の形成に用いることが可能なプラズマCVD装置の一形態について詳細に説明する。
本実施の形態では、実施の形態1に適用可能な第2の半導体層の形成工程について説明する。
本実施の形態では、実施の形態1に適用可能な第2の半導体層の形成工程について説明する。
実施の形態1において、第2の半導体層の作製方法について、図13を用いて示す。
実施の形態1とは異なる薄膜トランジスタの作製方法について、図14及び図15を用いて示す。
本実施の形態では、実施の形態1乃至6と比較して、半導体層の積層構造の異なる逆スタガ型薄膜トランジスタの作製工程について、以下に示す。
本実施の形態では、チャネル長が10μm以下と短い薄膜トランジスタにおいて、ソース領域及びドレイン領域の抵抗を低減することが可能な形態について、以下に示す。ここでは、実施の形態1及び実施の形態6を用いて説明するが、適宜他の実施の形態に適用可能である。
本実施の形態では、実施の形態1乃至実施の形態8で示す薄膜トランジスタを用いることが可能な、素子基板、及び当該素子基板を有する表示装置について、以下に示す。表示装置としては、液晶表示装置、発光表示装置、電子ペーパー等があるが、上記実施の形態の薄膜トランジスタは他の表示装置の素子基板にも用いることができる。ここでは、上記実施の形態1で示す薄膜トランジスタを有する液晶表示装置、代表的には、VA(Vertical Alignment)型の液晶表示装置について、図17及び図18を用いて説明する。
実施の形態9で示す素子基板313において、配向膜311を形成せず、発光素子を設けることにより、当該素子基板を発光表示装置や、発光装置に用いることができる。発光表示装置や発光装置は、発光素子として代表的には、エレクトロルミネッセンスを利用する発光素子がある。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって大別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
上記実施の形態に係る薄膜トランジスタを有する表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、電子ペーパー、デジタルカメラやデジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。特に、実施の形態9及び実施の形態10で示したように、上記実施の形態に係る薄膜トランジスタを液晶表示装置、発光装置、電気泳動方式表示装置などに適用することにより、電子機器の表示部に用いることができる。以下に具体的に例示する。
Claims (2)
- 基板上にトランジスタを有する半導体装置であって、
前記トランジスタは、導電層と、第1の絶縁層と、第2の絶縁層と、半導体層と、を有し、
前記導電層は、前記第1の絶縁層と前記第2の絶縁層とを介して、前記半導体層と重なる領域を有し、
前記第1の絶縁層は、窒素と珪素とを含み、
前記第2の絶縁層は、酸素と珪素とを含み、
前記半導体層は、
前記基板表面の法線方向に沿って成長した結晶を有する第1の領域と、
非晶質を有する第2の領域と、
前記第1の領域と前記第2の領域の間に設けられ、前記結晶と非晶質とが混在した第3の領域と、を有し、
前記第3の領域において、二次イオン質量分析法によって計測される窒素濃度は、1×10 20 atoms/cm 3 以上1×10 21 atoms/cm 3 以下であり、
前記半導体層において、二次イオン質量分析法によって計測される窒素濃度は、前記第1の領域と前記第3の領域との界面近傍においてピークを有することを特徴とする半導体装置。 - 請求項1において、
前記第2の領域において、二次イオン質量分析法によって計測される窒素濃度は、1×10 20 atoms/cm 3 以上1×10 21 atoms/cm 3 以下であることを特徴とする半導体装置。
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JP2009291547A JP5490515B2 (ja) | 2009-01-21 | 2009-12-23 | 半導体装置 |
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JP2009291547A JP5490515B2 (ja) | 2009-01-21 | 2009-12-23 | 半導体装置 |
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JP2010192877A JP2010192877A (ja) | 2010-09-02 |
JP2010192877A5 JP2010192877A5 (ja) | 2012-11-08 |
JP5490515B2 true JP5490515B2 (ja) | 2014-05-14 |
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JP5848918B2 (ja) | 2010-09-03 | 2016-01-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR102088462B1 (ko) | 2013-07-03 | 2020-05-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 이의 제조 방법 |
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GB0017471D0 (en) * | 2000-07-18 | 2000-08-30 | Koninkl Philips Electronics Nv | Thin film transistors and their manufacture |
JP2004146691A (ja) * | 2002-10-25 | 2004-05-20 | Chi Mei Electronics Corp | 微結晶薄膜の成膜方法、薄膜トランジスタの製造方法、薄膜トランジスタおよび薄膜トランジスタを用いた画像表示装置 |
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