JP5185404B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5185404B2
JP5185404B2 JP2011041618A JP2011041618A JP5185404B2 JP 5185404 B2 JP5185404 B2 JP 5185404B2 JP 2011041618 A JP2011041618 A JP 2011041618A JP 2011041618 A JP2011041618 A JP 2011041618A JP 5185404 B2 JP5185404 B2 JP 5185404B2
Authority
JP
Japan
Prior art keywords
oxide semiconductor
transistor
insulating layer
electrode
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2011041618A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011205078A (ja
JP2011205078A5 (https=
Inventor
舜平 山崎
邦彦 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011041618A priority Critical patent/JP5185404B2/ja
Publication of JP2011205078A publication Critical patent/JP2011205078A/ja
Publication of JP2011205078A5 publication Critical patent/JP2011205078A5/ja
Application granted granted Critical
Publication of JP5185404B2 publication Critical patent/JP5185404B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/408—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of Group III-V semiconductors, e.g. to render them semi-insulating

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Dram (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2011041618A 2010-03-05 2011-02-28 半導体装置の作製方法 Expired - Fee Related JP5185404B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011041618A JP5185404B2 (ja) 2010-03-05 2011-02-28 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010049602 2010-03-05
JP2010049602 2010-03-05
JP2011041618A JP5185404B2 (ja) 2010-03-05 2011-02-28 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013005977A Division JP5730337B2 (ja) 2010-03-05 2013-01-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2011205078A JP2011205078A (ja) 2011-10-13
JP2011205078A5 JP2011205078A5 (https=) 2012-10-25
JP5185404B2 true JP5185404B2 (ja) 2013-04-17

Family

ID=44530521

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2011041618A Expired - Fee Related JP5185404B2 (ja) 2010-03-05 2011-02-28 半導体装置の作製方法
JP2013005977A Active JP5730337B2 (ja) 2010-03-05 2013-01-17 半導体装置の作製方法
JP2015078462A Expired - Fee Related JP6007278B2 (ja) 2010-03-05 2015-04-07 半導体装置の作製方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013005977A Active JP5730337B2 (ja) 2010-03-05 2013-01-17 半導体装置の作製方法
JP2015078462A Expired - Fee Related JP6007278B2 (ja) 2010-03-05 2015-04-07 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US20110215325A1 (https=)
JP (3) JP5185404B2 (https=)
KR (1) KR20130008037A (https=)
TW (1) TWI597782B (https=)
WO (1) WO2011108382A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119189A (ja) * 2010-02-12 2015-06-25 株式会社半導体エネルギー研究所 半導体装置の作製方法

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9720501B2 (en) 2008-01-04 2017-08-01 Tactus Technology, Inc. Dynamic tactile interface
US9588683B2 (en) 2008-01-04 2017-03-07 Tactus Technology, Inc. Dynamic tactile interface
US9430074B2 (en) 2008-01-04 2016-08-30 Tactus Technology, Inc. Dynamic tactile interface
US9063627B2 (en) 2008-01-04 2015-06-23 Tactus Technology, Inc. User interface and methods
US9274612B2 (en) 2008-01-04 2016-03-01 Tactus Technology, Inc. User interface system
US9557915B2 (en) 2008-01-04 2017-01-31 Tactus Technology, Inc. Dynamic tactile interface
US20160187981A1 (en) 2008-01-04 2016-06-30 Tactus Technology, Inc. Manual fluid actuator
US9588684B2 (en) 2009-01-05 2017-03-07 Tactus Technology, Inc. Tactile interface for a computing device
WO2011001881A1 (en) * 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20130141344A (ko) 2010-04-19 2013-12-26 택투스 테크놀로지, 아이엔씨. 촉각 인터페이스층의 구동 방법
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN103124946B (zh) 2010-10-20 2016-06-29 泰克图斯科技公司 用户接口系统及方法
TWI624878B (zh) 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP6023994B2 (ja) * 2011-08-15 2016-11-09 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
KR20130043063A (ko) 2011-10-19 2013-04-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
WO2013058226A1 (ja) * 2011-10-21 2013-04-25 シャープ株式会社 半導体装置およびその製造方法
KR101976212B1 (ko) * 2011-10-24 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR102067051B1 (ko) * 2011-10-24 2020-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP5933895B2 (ja) * 2011-11-10 2016-06-15 株式会社半導体エネルギー研究所 半導体装置および半導体装置の作製方法
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI621185B (zh) 2011-12-01 2018-04-11 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102084274B1 (ko) * 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP6053490B2 (ja) * 2011-12-23 2016-12-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8796683B2 (en) * 2011-12-23 2014-08-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6220597B2 (ja) * 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
US9405417B2 (en) 2012-09-24 2016-08-02 Tactus Technology, Inc. Dynamic tactile interface and methods
TWI522714B (zh) * 2013-11-15 2016-02-21 群創光電股份有限公司 顯示面板及顯示裝置
WO2015097586A1 (en) * 2013-12-25 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6331052B2 (ja) * 2014-06-20 2018-05-30 株式会社Ｊｏｌｅｄ 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機ｅｌ表示装置
US10008611B2 (en) * 2014-06-26 2018-06-26 Joled Inc. Thin film transistor and organic EL display device
WO2016063159A1 (en) 2014-10-20 2016-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof, module, and electronic device
JP6358596B2 (ja) * 2014-11-27 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板の製造方法
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
KR102865410B1 (ko) * 2015-02-06 2025-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US10192995B2 (en) 2015-04-28 2019-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2017013691A1 (ja) * 2015-07-17 2017-01-26 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及び薄膜トランジスタの製造方法
CN107851669A (zh) * 2015-07-27 2018-03-27 夏普株式会社 半导体装置及其制造方法
KR102367216B1 (ko) * 2015-09-25 2022-02-25 엘지디스플레이 주식회사 표시장치와 그 구동 방법
KR102453950B1 (ko) * 2015-09-30 2022-10-17 엘지디스플레이 주식회사 표시장치와 그 구동 방법
CN108418575B (zh) * 2018-06-08 2024-12-17 上海科世达-华阳汽车电器有限公司 一种触控压力传感器及触控压力开关
KR102145387B1 (ko) * 2019-01-07 2020-08-18 한양대학교 산학협력단 박막 트랜지스터 및 그 제조방법

Family Cites Families (137)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5171710A (en) * 1985-08-02 1992-12-15 Semiconductor Energy Laboratory Co., Ltd. Method for photo annealing non-single crystalline semiconductor films
JP2506961B2 (ja) * 1988-07-25 1996-06-12 松下電器産業株式会社 薄膜トランジスタの製造方法
TW237562B (https=) * 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
US5124180A (en) * 1991-03-11 1992-06-23 Btu Engineering Corporation Method for the formation of fluorine doped metal oxide films
JP3071851B2 (ja) * 1991-03-25 2000-07-31 株式会社半導体エネルギー研究所 電気光学装置
JP3168655B2 (ja) * 1992-01-07 2001-05-21 富士通株式会社 多結晶シリコン薄膜の製造方法
KR0143873B1 (ko) * 1993-02-19 1998-08-17 순페이 야마자끼 절연막 및 반도체장치 및 반도체 장치 제조방법
US5316697A (en) * 1993-03-24 1994-05-31 Kerr-Mcgee Corporation Conductive, particulate, fluorine-doped zinc oxide
TW529773U (en) * 1995-06-01 2003-04-21 Semiconductor Energy L B Semiconductor device
WO1997006554A2 (en) * 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
US6100562A (en) * 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6071561A (en) * 1997-08-13 2000-06-06 President And Fellows Of Harvard College Chemical vapor deposition of fluorine-doped zinc oxide
US5983667A (en) * 1997-10-31 1999-11-16 Praxair Technology, Inc. Cryogenic system for producing ultra-high purity nitrogen
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW469465B (en) * 1998-12-10 2001-12-21 Mitsubishi Materials Corp Protective film for FPD and manufacture thereof, and FPD using the same
FR2787940B1 (fr) * 1998-12-24 2001-01-26 Air Liquide Methode de remplissage gazeux de lignes de transport de courant electrique a isolation gazeuse et procede de fabrication de lignes integrant une telle methode de remplissage
JP2001326175A (ja) * 2000-05-12 2001-11-22 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
TW577813B (en) * 2000-07-10 2004-03-01 Semiconductor Energy Lab Film forming apparatus and method of manufacturing light emitting device
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
EP1399382B1 (en) * 2001-06-29 2011-04-13 Showa Denko K.K. Production of high-purity fluorine gas and method for analyzing trace impurities in high-purity fluorine gas
US20030015220A1 (en) * 2001-07-18 2003-01-23 Pennington Michael A. Gas dilution method and apparatus
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4050503B2 (ja) * 2001-11-29 2008-02-20 株式会社日立製作所 表示装置
JP4310984B2 (ja) * 2002-02-06 2009-08-12 株式会社日立製作所 有機発光表示装置
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) * 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP2003297753A (ja) * 2003-02-14 2003-10-17 Semiconductor Energy Lab Co Ltd 半導体膜の作製方法
JP5176274B2 (ja) * 2003-05-19 2013-04-03 住友電気工業株式会社 光ファイバとその製造方法
JP4108633B2 (ja) * 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
JP4479381B2 (ja) * 2003-09-24 2010-06-09 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、及び電子機器
WO2005048222A1 (en) * 2003-11-14 2005-05-26 Semiconductor Energy Laboratory Co., Ltd. Light emitting display device, method for manufacturing the same, and tv set
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR20070116888A (ko) * 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
CN100573833C (zh) * 2004-03-25 2009-12-23 株式会社半导体能源研究所 用于制造薄膜晶体管的方法
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US8158517B2 (en) * 2004-06-28 2012-04-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing wiring substrate, thin film transistor, display device and television device
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
EP2453481B1 (en) * 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7863611B2 (en) * 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
CA2585063C (en) * 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
BRPI0517560B8 (pt) * 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7608531B2 (en) * 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) * 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) * 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) * 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) * 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
EP3614442A3 (en) * 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090115222A (ko) * 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US8197914B2 (en) * 2005-11-21 2012-06-12 Air Products And Chemicals, Inc. Method for depositing zinc oxide at low temperatures and products formed thereby
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP2007250982A (ja) * 2006-03-17 2007-09-27 Canon Inc 酸化物半導体を用いた薄膜トランジスタ及び表示装置
KR20070101595A (ko) * 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
JP4153961B2 (ja) * 2006-04-25 2008-09-24 積水化学工業株式会社 シリコンのエッチング方法
US20070252928A1 (en) * 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
CN101356652B (zh) * 2006-06-02 2012-04-18 日本财团法人高知县产业振兴中心 包括由氧化锌构成的氧化物半导体薄膜层的半导体器件及其制造方法
JP5028033B2 (ja) * 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
JP5116290B2 (ja) * 2006-11-21 2013-01-09 キヤノン株式会社 薄膜トランジスタの製造方法
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
JP4950673B2 (ja) * 2007-01-10 2012-06-13 キヤノン株式会社 有機ｅｌ表示装置
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
CA2677312C (en) * 2007-02-05 2015-08-04 Universidade Nova De Lisboa Electronic semiconductor device based on copper nickel and gallium-tin-zinc-copper-titanium p and n-type oxides, their applications and corresponding manufacture process
TWI478347B (zh) * 2007-02-09 2015-03-21 出光興產股份有限公司 A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
JP4947051B2 (ja) * 2007-02-26 2012-06-06 株式会社村田製作所 導電膜および導電膜の製造方法
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
KR100982395B1 (ko) * 2007-04-25 2010-09-14 주식회사 엘지화학 박막 트랜지스터 및 이의 제조방법
CN101663762B (zh) * 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
US8381587B2 (en) * 2007-05-08 2013-02-26 Ideal Star Inc. Gas sensor, gas measuring system using the gas sensor, and gas detection module for the gas sensor
US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008311385A (ja) * 2007-06-14 2008-12-25 Hitachi High-Technologies Corp 基板処理装置
US7682882B2 (en) * 2007-06-20 2010-03-23 Samsung Electronics Co., Ltd. Method of manufacturing ZnO-based thin film transistor
WO2009031423A1 (ja) * 2007-09-03 2009-03-12 Konica Minolta Holdings, Inc. 金属酸化物半導体薄膜の製造方法、これを用いた薄膜トランジスタ
JP2009123957A (ja) * 2007-11-15 2009-06-04 Sumitomo Chemical Co Ltd 酸化物半導体材料及びその製造方法、電子デバイス及び電界効果トランジスタ
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
JP5213422B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
JP5215158B2 (ja) * 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
GB0803702D0 (en) * 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
JP2009231664A (ja) * 2008-03-25 2009-10-08 Idemitsu Kosan Co Ltd 電界効果トランジスタ及びその製造方法
JP2009253204A (ja) * 2008-04-10 2009-10-29 Idemitsu Kosan Co Ltd 酸化物半導体を用いた電界効果型トランジスタ及びその製造方法
US9041202B2 (en) * 2008-05-16 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
EP2629590A1 (en) * 2008-06-17 2013-08-21 Hitachi Ltd. An organic light-emitting device
JP5510767B2 (ja) * 2008-06-19 2014-06-04 出光興産株式会社 薄膜トランジスタおよびその製造方法
US8822263B2 (en) * 2008-06-30 2014-09-02 National University Corporation Tokyo University Of Agriculture And Technology Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor device
TWI495108B (zh) * 2008-07-31 2015-08-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI770659B (zh) * 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
TWI518800B (zh) * 2008-08-08 2016-01-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5627071B2 (ja) * 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4623179B2 (ja) * 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
JP5451280B2 (ja) * 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5615540B2 (ja) * 2008-12-19 2014-10-29 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100993416B1 (ko) * 2009-01-20 2010-11-09 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를 구비하는 평판 표시 장치
KR101608887B1 (ko) * 2009-04-17 2016-04-05 삼성전자주식회사 인버터와 그 제조방법 및 인버터를 포함하는 논리회로
TWI397184B (zh) * 2009-04-29 2013-05-21 Ind Tech Res Inst 氧化物半導體薄膜電晶體
JP4415062B1 (ja) * 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
KR101782176B1 (ko) * 2009-07-18 2017-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
CN102484140B (zh) * 2009-09-04 2015-04-22 株式会社半导体能源研究所 半导体器件的制造方法
KR102295450B1 (ko) * 2009-10-09 2021-08-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
WO2011048959A1 (en) * 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN103151266B (zh) * 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
JP5731244B2 (ja) * 2010-03-26 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8207025B2 (en) * 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TWI521612B (zh) * 2011-03-11 2016-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015119189A (ja) * 2010-02-12 2015-06-25 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2011205078A (ja) 2011-10-13
JP2015156504A (ja) 2015-08-27
KR20130008037A (ko) 2013-01-21
WO2011108382A1 (en) 2011-09-09
TW201203381A (en) 2012-01-16
JP6007278B2 (ja) 2016-10-12
JP2013123064A (ja) 2013-06-20
US20110215325A1 (en) 2011-09-08
JP5730337B2 (ja) 2015-06-10
TWI597782B (zh) 2017-09-01

Similar Documents

Publication Publication Date Title
JP5185404B2 (ja) 半導体装置の作製方法
JP7610674B2 (ja) 半導体装置
KR102234337B1 (ko) 반도체 장치 및 그의 제작 방법
JP6001697B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120911

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120911

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20120911

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20121016

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121106

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121220

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130115

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130117

R150 Certificate of patent or registration of utility model

Ref document number: 5185404

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160125

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160125

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees