JP5168990B2 - 半導体基板の製造方法 - Google Patents
半導体基板の製造方法Info
- Publication number
- JP5168990B2 JP5168990B2 JP2007104039A JP2007104039A JP5168990B2 JP 5168990 B2 JP5168990 B2 JP 5168990B2 JP 2007104039 A JP2007104039 A JP 2007104039A JP 2007104039 A JP2007104039 A JP 2007104039A JP 5168990 B2 JP5168990 B2 JP 5168990B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- semiconductor single
- semiconductor
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 108
- 239000000758 substrate Substances 0.000 title claims description 96
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000013078 crystal Substances 0.000 claims description 95
- 238000000034 method Methods 0.000 claims description 21
- 230000003647 oxidation Effects 0.000 claims description 21
- 238000007254 oxidation reaction Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 78
- 239000010408 film Substances 0.000 description 73
- 239000007789 gas Substances 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104039A JP5168990B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104039A JP5168990B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008263025A JP2008263025A (ja) | 2008-10-30 |
| JP2008263025A5 JP2008263025A5 (enrdf_load_stackoverflow) | 2010-02-04 |
| JP5168990B2 true JP5168990B2 (ja) | 2013-03-27 |
Family
ID=39985291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007104039A Active JP5168990B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5168990B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021079745A1 (ja) | 2019-10-24 | 2021-04-29 | 信越半導体株式会社 | 半導体基板の製造方法及び半導体基板 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5205840B2 (ja) * | 2007-07-06 | 2013-06-05 | 信越半導体株式会社 | 半導体基板の製造方法 |
| JP7247902B2 (ja) | 2020-01-10 | 2023-03-29 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| EP4283024A4 (en) | 2021-01-25 | 2024-12-04 | Shin-Etsu Handotai Co., Ltd. | EPITAXIAL WAFER MANUFACTURING PROCESS |
| CN114005753B (zh) * | 2021-10-29 | 2023-07-11 | 西安微电子技术研究所 | 一种igbt产品的氧化工艺方法及氧化后igbt产品 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04311029A (ja) * | 1991-04-09 | 1992-11-02 | Seiko Epson Corp | 半導体薄膜の製造方法 |
| JPH09162088A (ja) * | 1995-12-13 | 1997-06-20 | Asahi Chem Ind Co Ltd | 半導体基板とその製造方法 |
| JP2003303971A (ja) * | 2002-04-09 | 2003-10-24 | Matsushita Electric Ind Co Ltd | 半導体基板及び半導体装置 |
| JP3604018B2 (ja) * | 2002-05-24 | 2004-12-22 | 独立行政法人科学技術振興機構 | シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法 |
| US7045432B2 (en) * | 2004-02-04 | 2006-05-16 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
| JP4095615B2 (ja) * | 2004-02-16 | 2008-06-04 | 光 小林 | 酸化膜の形成方法、半導体装置、半導体装置の製造方法 |
-
2007
- 2007-04-11 JP JP2007104039A patent/JP5168990B2/ja active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021079745A1 (ja) | 2019-10-24 | 2021-04-29 | 信越半導体株式会社 | 半導体基板の製造方法及び半導体基板 |
| KR20220090506A (ko) | 2019-10-24 | 2022-06-29 | 신에쯔 한도타이 가부시키가이샤 | 반도체기판의 제조방법 및 반도체기판 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008263025A (ja) | 2008-10-30 |
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