JP2008263025A5 - - Google Patents
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- Publication number
- JP2008263025A5 JP2008263025A5 JP2007104039A JP2007104039A JP2008263025A5 JP 2008263025 A5 JP2008263025 A5 JP 2008263025A5 JP 2007104039 A JP2007104039 A JP 2007104039A JP 2007104039 A JP2007104039 A JP 2007104039A JP 2008263025 A5 JP2008263025 A5 JP 2008263025A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- semiconductor single
- semiconductor
- manufacturing
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 19
- 239000013078 crystal Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 6
- 230000003647 oxidation Effects 0.000 claims 5
- 238000007254 oxidation reaction Methods 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104039A JP5168990B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007104039A JP5168990B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008263025A JP2008263025A (ja) | 2008-10-30 |
| JP2008263025A5 true JP2008263025A5 (enrdf_load_stackoverflow) | 2010-02-04 |
| JP5168990B2 JP5168990B2 (ja) | 2013-03-27 |
Family
ID=39985291
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007104039A Active JP5168990B2 (ja) | 2007-04-11 | 2007-04-11 | 半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5168990B2 (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5205840B2 (ja) * | 2007-07-06 | 2013-06-05 | 信越半導体株式会社 | 半導体基板の製造方法 |
| WO2021079745A1 (ja) | 2019-10-24 | 2021-04-29 | 信越半導体株式会社 | 半導体基板の製造方法及び半導体基板 |
| JP7247902B2 (ja) | 2020-01-10 | 2023-03-29 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| EP4283024A4 (en) | 2021-01-25 | 2024-12-04 | Shin-Etsu Handotai Co., Ltd. | EPITAXIAL WAFER MANUFACTURING PROCESS |
| CN114005753B (zh) * | 2021-10-29 | 2023-07-11 | 西安微电子技术研究所 | 一种igbt产品的氧化工艺方法及氧化后igbt产品 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04311029A (ja) * | 1991-04-09 | 1992-11-02 | Seiko Epson Corp | 半導体薄膜の製造方法 |
| JPH09162088A (ja) * | 1995-12-13 | 1997-06-20 | Asahi Chem Ind Co Ltd | 半導体基板とその製造方法 |
| JP2003303971A (ja) * | 2002-04-09 | 2003-10-24 | Matsushita Electric Ind Co Ltd | 半導体基板及び半導体装置 |
| JP3604018B2 (ja) * | 2002-05-24 | 2004-12-22 | 独立行政法人科学技術振興機構 | シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法 |
| US7045432B2 (en) * | 2004-02-04 | 2006-05-16 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
| JP4095615B2 (ja) * | 2004-02-16 | 2008-06-04 | 光 小林 | 酸化膜の形成方法、半導体装置、半導体装置の製造方法 |
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2007
- 2007-04-11 JP JP2007104039A patent/JP5168990B2/ja active Active