JP2014144880A5 - - Google Patents
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- Publication number
- JP2014144880A5 JP2014144880A5 JP2013012793A JP2013012793A JP2014144880A5 JP 2014144880 A5 JP2014144880 A5 JP 2014144880A5 JP 2013012793 A JP2013012793 A JP 2013012793A JP 2013012793 A JP2013012793 A JP 2013012793A JP 2014144880 A5 JP2014144880 A5 JP 2014144880A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- substrate
- manufacturing apparatus
- insulating material
- heat insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000013078 crystal Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 11
- 229910010271 silicon carbide Inorganic materials 0.000 claims 6
- 239000011810 insulating material Substances 0.000 claims 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013012793A JP5805115B2 (ja) | 2013-01-28 | 2013-01-28 | 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013012793A JP5805115B2 (ja) | 2013-01-28 | 2013-01-28 | 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014144880A JP2014144880A (ja) | 2014-08-14 |
| JP2014144880A5 true JP2014144880A5 (enrdf_load_stackoverflow) | 2014-11-27 |
| JP5805115B2 JP5805115B2 (ja) | 2015-11-04 |
Family
ID=51425456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013012793A Active JP5805115B2 (ja) | 2013-01-28 | 2013-01-28 | 単結晶の製造装置およびそれを用いた炭化珪素単結晶の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5805115B2 (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI533401B (zh) | 2013-08-29 | 2016-05-11 | Bridgestone Corp | 晶座 |
| JP6393161B2 (ja) * | 2014-11-21 | 2018-09-19 | 東京エレクトロン株式会社 | 成膜装置 |
| JP6468291B2 (ja) * | 2015-09-11 | 2019-02-13 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法 |
| JP6671161B2 (ja) * | 2015-11-30 | 2020-03-25 | 昭和電工株式会社 | 炭化珪素エピタキシャル成長用基板ホルダー及びエピタキシャル炭化珪素単結晶ウェハの製造方法 |
| CN108242387B (zh) * | 2016-12-23 | 2021-03-05 | 财团法人工业技术研究院 | 半导体基板结构 |
| WO2023101613A2 (en) * | 2021-12-03 | 2023-06-08 | Agency For Science, Technology And Research | Method of forming silicon carbide epitaxial wafer and silicon carbide substrate |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3603216B2 (ja) * | 1997-06-17 | 2004-12-22 | 株式会社日鉱マテリアルズ | 薄膜成長装置 |
| JP5169097B2 (ja) * | 2007-09-14 | 2013-03-27 | 住友電気工業株式会社 | 半導体装置の製造装置および製造方法 |
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2013
- 2013-01-28 JP JP2013012793A patent/JP5805115B2/ja active Active