JP2010228924A5 - - Google Patents
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- Publication number
- JP2010228924A5 JP2010228924A5 JP2009074836A JP2009074836A JP2010228924A5 JP 2010228924 A5 JP2010228924 A5 JP 2010228924A5 JP 2009074836 A JP2009074836 A JP 2009074836A JP 2009074836 A JP2009074836 A JP 2009074836A JP 2010228924 A5 JP2010228924 A5 JP 2010228924A5
- Authority
- JP
- Japan
- Prior art keywords
- sec
- silicon
- epitaxial wafer
- heat treatment
- treatment step
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 16
- 229910052710 silicon Inorganic materials 0.000 claims 16
- 239000010703 silicon Substances 0.000 claims 16
- 238000004519 manufacturing process Methods 0.000 claims 15
- 238000010438 heat treatment Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 238000002844 melting Methods 0.000 claims 5
- 238000004090 dissolution Methods 0.000 claims 4
- 230000008018 melting Effects 0.000 claims 4
- 238000001556 precipitation Methods 0.000 claims 4
- 230000000630 rising effect Effects 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 238000001816 cooling Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 claims 2
- 230000001590 oxidative effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009074836A JP5504664B2 (ja) | 2009-03-25 | 2009-03-25 | シリコンエピタキシャルウェーハおよびその製造方法 |
| EP10755675.5A EP2412849B1 (en) | 2009-03-25 | 2010-03-25 | Silicon wafer and method for manufacturing same |
| KR1020147011599A KR101507360B1 (ko) | 2009-03-25 | 2010-03-25 | 실리콘 웨이퍼 및 그 제조방법 |
| EP14151040.4A EP2722423B1 (en) | 2009-03-25 | 2010-03-25 | Method of manufacturing a silicon wafer |
| US13/258,962 US8890291B2 (en) | 2009-03-25 | 2010-03-25 | Silicon wafer and manufacturing method thereof |
| KR1020117025002A KR101389058B1 (ko) | 2009-03-25 | 2010-03-25 | 실리콘 웨이퍼 및 그 제조방법 |
| KR1020137013027A KR101422713B1 (ko) | 2009-03-25 | 2010-03-25 | 실리콘 웨이퍼 및 그 제조방법 |
| PCT/JP2010/002117 WO2010109873A1 (ja) | 2009-03-25 | 2010-03-25 | シリコンウェーハおよびその製造方法 |
| US14/518,594 US9243345B2 (en) | 2009-03-25 | 2014-10-20 | Silicon wafer and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009074836A JP5504664B2 (ja) | 2009-03-25 | 2009-03-25 | シリコンエピタキシャルウェーハおよびその製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014055512A Division JP5811218B2 (ja) | 2014-03-18 | 2014-03-18 | シリコンエピタキシャルウェーハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010228924A JP2010228924A (ja) | 2010-10-14 |
| JP2010228924A5 true JP2010228924A5 (enrdf_load_stackoverflow) | 2012-03-01 |
| JP5504664B2 JP5504664B2 (ja) | 2014-05-28 |
Family
ID=43045104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009074836A Expired - Fee Related JP5504664B2 (ja) | 2009-03-25 | 2009-03-25 | シリコンエピタキシャルウェーハおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5504664B2 (enrdf_load_stackoverflow) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5471359B2 (ja) * | 2009-11-26 | 2014-04-16 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
| JP5782323B2 (ja) * | 2011-07-22 | 2015-09-24 | グローバルウェーハズ・ジャパン株式会社 | 単結晶引上方法 |
| JP2013239474A (ja) * | 2012-05-11 | 2013-11-28 | Sanken Electric Co Ltd | エピタキシャル基板、半導体装置及び半導体装置の製造方法 |
| JP6136346B2 (ja) * | 2013-02-21 | 2017-05-31 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
| JP6260100B2 (ja) | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
| JP6610056B2 (ja) | 2015-07-28 | 2019-11-27 | 株式会社Ｓｕｍｃｏ | エピタキシャルシリコンウェーハの製造方法 |
| JP7384264B1 (ja) * | 2022-11-10 | 2023-11-21 | 信越半導体株式会社 | エピタキシャル成長用シリコンウェーハ及びエピタキシャルウェーハ |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3711199B2 (ja) * | 1998-07-07 | 2005-10-26 | 信越半導体株式会社 | シリコン基板の熱処理方法 |
| JP5239155B2 (ja) * | 2006-06-20 | 2013-07-17 | 信越半導体株式会社 | シリコンウエーハの製造方法 |
| JP2008066357A (ja) * | 2006-09-05 | 2008-03-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
| JP4760822B2 (ja) * | 2007-12-14 | 2011-08-31 | 株式会社Ｓｕｍｃｏ | エピタキシャルウェーハの製造方法 |
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2009
- 2009-03-25 JP JP2009074836A patent/JP5504664B2/ja not_active Expired - Fee Related