JP2008294256A5 - - Google Patents
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- Publication number
- JP2008294256A5 JP2008294256A5 JP2007138652A JP2007138652A JP2008294256A5 JP 2008294256 A5 JP2008294256 A5 JP 2008294256A5 JP 2007138652 A JP2007138652 A JP 2007138652A JP 2007138652 A JP2007138652 A JP 2007138652A JP 2008294256 A5 JP2008294256 A5 JP 2008294256A5
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- single crystal
- silicon single
- wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 235000012431 wafers Nutrition 0.000 claims 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 12
- 229910052710 silicon Inorganic materials 0.000 claims 12
- 239000010703 silicon Substances 0.000 claims 12
- 239000013078 crystal Substances 0.000 claims 10
- 238000010438 heat treatment Methods 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- 238000005498 polishing Methods 0.000 claims 5
- 238000000137 annealing Methods 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000005247 gettering Methods 0.000 claims 1
- 238000002844 melting Methods 0.000 claims 1
- 230000008018 melting Effects 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007138652A JP5211550B2 (ja) | 2007-05-25 | 2007-05-25 | シリコン単結晶ウェーハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007138652A JP5211550B2 (ja) | 2007-05-25 | 2007-05-25 | シリコン単結晶ウェーハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008294256A JP2008294256A (ja) | 2008-12-04 |
| JP2008294256A5 true JP2008294256A5 (enrdf_load_stackoverflow) | 2011-01-13 |
| JP5211550B2 JP5211550B2 (ja) | 2013-06-12 |
Family
ID=40168663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007138652A Active JP5211550B2 (ja) | 2007-05-25 | 2007-05-25 | シリコン単結晶ウェーハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5211550B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011083041B4 (de) * | 2010-10-20 | 2018-06-07 | Siltronic Ag | Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung und Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe unter Verwendung eines solchen Stützrings |
| JP6044660B2 (ja) * | 2015-02-19 | 2016-12-14 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5974638A (ja) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | 半導体ウエ−ハの製法 |
| JPS63166237A (ja) * | 1986-12-27 | 1988-07-09 | Fujitsu Ltd | 半導体基板の処理方法 |
| JP2003257981A (ja) * | 2002-02-27 | 2003-09-12 | Toshiba Ceramics Co Ltd | シリコンウェーハの製造方法 |
| JP4432317B2 (ja) * | 2002-12-11 | 2010-03-17 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
| JP4854936B2 (ja) * | 2004-06-15 | 2012-01-18 | 信越半導体株式会社 | シリコンウエーハの製造方法及びシリコンウエーハ |
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2007
- 2007-05-25 JP JP2007138652A patent/JP5211550B2/ja active Active