JP5211550B2 - シリコン単結晶ウェーハの製造方法 - Google Patents
シリコン単結晶ウェーハの製造方法 Download PDFInfo
- Publication number
- JP5211550B2 JP5211550B2 JP2007138652A JP2007138652A JP5211550B2 JP 5211550 B2 JP5211550 B2 JP 5211550B2 JP 2007138652 A JP2007138652 A JP 2007138652A JP 2007138652 A JP2007138652 A JP 2007138652A JP 5211550 B2 JP5211550 B2 JP 5211550B2
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- Prior art keywords
- wafer
- heat treatment
- layer
- silicon
- single crystal
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 41
- 229910052710 silicon Inorganic materials 0.000 title claims description 41
- 239000010703 silicon Substances 0.000 title claims description 41
- 239000013078 crystal Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 235000012431 wafers Nutrition 0.000 claims description 79
- 238000010438 heat treatment Methods 0.000 claims description 50
- 238000000034 method Methods 0.000 claims description 30
- 238000005498 polishing Methods 0.000 claims description 27
- 238000005247 gettering Methods 0.000 claims description 21
- 239000012298 atmosphere Substances 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 66
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 28
- 239000001301 oxygen Substances 0.000 description 28
- 229910052760 oxygen Inorganic materials 0.000 description 28
- 239000000523 sample Substances 0.000 description 22
- 239000002244 precipitate Substances 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 238000001556 precipitation Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 5
- 239000013074 reference sample Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000003776 cleavage reaction Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007017 scission Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- -1 carbon ions Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007138652A JP5211550B2 (ja) | 2007-05-25 | 2007-05-25 | シリコン単結晶ウェーハの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007138652A JP5211550B2 (ja) | 2007-05-25 | 2007-05-25 | シリコン単結晶ウェーハの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008294256A JP2008294256A (ja) | 2008-12-04 |
| JP2008294256A5 JP2008294256A5 (enrdf_load_stackoverflow) | 2011-01-13 |
| JP5211550B2 true JP5211550B2 (ja) | 2013-06-12 |
Family
ID=40168663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007138652A Active JP5211550B2 (ja) | 2007-05-25 | 2007-05-25 | シリコン単結晶ウェーハの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5211550B2 (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102011083041B4 (de) * | 2010-10-20 | 2018-06-07 | Siltronic Ag | Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung und Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe unter Verwendung eines solchen Stützrings |
| JP6044660B2 (ja) * | 2015-02-19 | 2016-12-14 | 信越半導体株式会社 | シリコンウェーハの製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5974638A (ja) * | 1982-10-22 | 1984-04-27 | Hitachi Ltd | 半導体ウエ−ハの製法 |
| JPS63166237A (ja) * | 1986-12-27 | 1988-07-09 | Fujitsu Ltd | 半導体基板の処理方法 |
| JP2003257981A (ja) * | 2002-02-27 | 2003-09-12 | Toshiba Ceramics Co Ltd | シリコンウェーハの製造方法 |
| JP4432317B2 (ja) * | 2002-12-11 | 2010-03-17 | 信越半導体株式会社 | シリコンウエーハの熱処理方法 |
| JP4854936B2 (ja) * | 2004-06-15 | 2012-01-18 | 信越半導体株式会社 | シリコンウエーハの製造方法及びシリコンウエーハ |
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2007
- 2007-05-25 JP JP2007138652A patent/JP5211550B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008294256A (ja) | 2008-12-04 |
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