JP5504664B2 - シリコンエピタキシャルウェーハおよびその製造方法 - Google Patents

シリコンエピタキシャルウェーハおよびその製造方法 Download PDF

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Publication number
JP5504664B2
JP5504664B2 JP2009074836A JP2009074836A JP5504664B2 JP 5504664 B2 JP5504664 B2 JP 5504664B2 JP 2009074836 A JP2009074836 A JP 2009074836A JP 2009074836 A JP2009074836 A JP 2009074836A JP 5504664 B2 JP5504664 B2 JP 5504664B2
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JP
Japan
Prior art keywords
wafer
heat treatment
silicon
range
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009074836A
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English (en)
Japanese (ja)
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JP2010228924A (ja
JP2010228924A5 (enrdf_load_stackoverflow
Inventor
敏昭 小野
亘 伊藤
淳 藤瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
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Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2009074836A priority Critical patent/JP5504664B2/ja
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to KR1020117025002A priority patent/KR101389058B1/ko
Priority to US13/258,962 priority patent/US8890291B2/en
Priority to EP14151040.4A priority patent/EP2722423B1/en
Priority to EP10755675.5A priority patent/EP2412849B1/en
Priority to PCT/JP2010/002117 priority patent/WO2010109873A1/ja
Priority to KR1020137013027A priority patent/KR101422713B1/ko
Priority to KR1020147011599A priority patent/KR101507360B1/ko
Publication of JP2010228924A publication Critical patent/JP2010228924A/ja
Publication of JP2010228924A5 publication Critical patent/JP2010228924A5/ja
Application granted granted Critical
Publication of JP5504664B2 publication Critical patent/JP5504664B2/ja
Priority to US14/518,594 priority patent/US9243345B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2009074836A 2009-03-25 2009-03-25 シリコンエピタキシャルウェーハおよびその製造方法 Expired - Fee Related JP5504664B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2009074836A JP5504664B2 (ja) 2009-03-25 2009-03-25 シリコンエピタキシャルウェーハおよびその製造方法
KR1020147011599A KR101507360B1 (ko) 2009-03-25 2010-03-25 실리콘 웨이퍼 및 그 제조방법
EP14151040.4A EP2722423B1 (en) 2009-03-25 2010-03-25 Method of manufacturing a silicon wafer
EP10755675.5A EP2412849B1 (en) 2009-03-25 2010-03-25 Silicon wafer and method for manufacturing same
PCT/JP2010/002117 WO2010109873A1 (ja) 2009-03-25 2010-03-25 シリコンウェーハおよびその製造方法
KR1020137013027A KR101422713B1 (ko) 2009-03-25 2010-03-25 실리콘 웨이퍼 및 그 제조방법
KR1020117025002A KR101389058B1 (ko) 2009-03-25 2010-03-25 실리콘 웨이퍼 및 그 제조방법
US13/258,962 US8890291B2 (en) 2009-03-25 2010-03-25 Silicon wafer and manufacturing method thereof
US14/518,594 US9243345B2 (en) 2009-03-25 2014-10-20 Silicon wafer and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009074836A JP5504664B2 (ja) 2009-03-25 2009-03-25 シリコンエピタキシャルウェーハおよびその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014055512A Division JP5811218B2 (ja) 2014-03-18 2014-03-18 シリコンエピタキシャルウェーハの製造方法

Publications (3)

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JP2010228924A JP2010228924A (ja) 2010-10-14
JP2010228924A5 JP2010228924A5 (enrdf_load_stackoverflow) 2012-03-01
JP5504664B2 true JP5504664B2 (ja) 2014-05-28

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Family Applications (1)

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JP2009074836A Expired - Fee Related JP5504664B2 (ja) 2009-03-25 2009-03-25 シリコンエピタキシャルウェーハおよびその製造方法

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JP (1) JP5504664B2 (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5471359B2 (ja) * 2009-11-26 2014-04-16 信越半導体株式会社 エピタキシャルウェーハの製造方法
JP5782323B2 (ja) * 2011-07-22 2015-09-24 グローバルウェーハズ・ジャパン株式会社 単結晶引上方法
JP2013239474A (ja) * 2012-05-11 2013-11-28 Sanken Electric Co Ltd エピタキシャル基板、半導体装置及び半導体装置の製造方法
JP6136346B2 (ja) * 2013-02-21 2017-05-31 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6260100B2 (ja) 2013-04-03 2018-01-17 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
JP6610056B2 (ja) * 2015-07-28 2019-11-27 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハの製造方法
JP7384264B1 (ja) 2022-11-10 2023-11-21 信越半導体株式会社 エピタキシャル成長用シリコンウェーハ及びエピタキシャルウェーハ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3711199B2 (ja) * 1998-07-07 2005-10-26 信越半導体株式会社 シリコン基板の熱処理方法
JP5239155B2 (ja) * 2006-06-20 2013-07-17 信越半導体株式会社 シリコンウエーハの製造方法
JP2008066357A (ja) * 2006-09-05 2008-03-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
JP4760822B2 (ja) * 2007-12-14 2011-08-31 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法

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