JP2012506629A5 - - Google Patents
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- Publication number
- JP2012506629A5 JP2012506629A5 JP2011532591A JP2011532591A JP2012506629A5 JP 2012506629 A5 JP2012506629 A5 JP 2012506629A5 JP 2011532591 A JP2011532591 A JP 2011532591A JP 2011532591 A JP2011532591 A JP 2011532591A JP 2012506629 A5 JP2012506629 A5 JP 2012506629A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- substrate
- layer
- compound
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 18
- 238000000034 method Methods 0.000 claims 15
- 150000001875 compounds Chemical class 0.000 claims 11
- 239000010410 layer Substances 0.000 claims 10
- 238000000137 annealing Methods 0.000 claims 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 239000000654 additive Substances 0.000 claims 3
- 230000000996 additive effect Effects 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 150000003377 silicon compounds Chemical class 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 238000005247 gettering Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/257,233 | 2008-10-23 | ||
| EP08167461A EP2180531A1 (en) | 2008-10-23 | 2008-10-23 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
| EP08167461.6 | 2008-10-23 | ||
| US12/257,233 US8124502B2 (en) | 2008-10-23 | 2008-10-23 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
| PCT/EP2009/063370 WO2010046284A1 (en) | 2008-10-23 | 2009-10-13 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2012506629A JP2012506629A (ja) | 2012-03-15 |
| JP2012506629A5 true JP2012506629A5 (enrdf_load_stackoverflow) | 2012-05-17 |
Family
ID=41809150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011532591A Ceased JP2012506629A (ja) | 2008-10-23 | 2009-10-13 | 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2012506629A (enrdf_load_stackoverflow) |
| KR (1) | KR20110086833A (enrdf_load_stackoverflow) |
| CN (1) | CN102197497A (enrdf_load_stackoverflow) |
| TW (1) | TW201030854A (enrdf_load_stackoverflow) |
| WO (1) | WO2010046284A1 (enrdf_load_stackoverflow) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI126401B (fi) * | 2011-09-30 | 2016-11-15 | Aalto-Korkeakoulusäätiö | Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin |
| JP2015519729A (ja) * | 2012-04-02 | 2015-07-09 | ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． | 光電変換素子及びその製造方法 |
| CN104425633B (zh) * | 2013-08-30 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 一种介质钝化膜和太阳能电池及其制备方法 |
| JP6072129B2 (ja) * | 2014-04-30 | 2017-02-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ドーパント含有ポリマー膜を用いた基体のドーピング |
| CN107735866B (zh) * | 2015-05-29 | 2021-05-14 | 松下知识产权经营株式会社 | 太阳能电池 |
| JPWO2018003036A1 (ja) * | 2016-06-29 | 2018-10-04 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池製造装置 |
| JP2020113580A (ja) * | 2019-01-08 | 2020-07-27 | 株式会社ディスコ | ゲッタリング層形成方法 |
| CN110707160B (zh) * | 2019-10-11 | 2021-07-16 | 湖南红太阳光电科技有限公司 | 一种管式直接PECVD制备太阳电池SiC减反射膜的方法 |
| CN113782638B (zh) * | 2021-09-09 | 2024-10-22 | 正泰新能科技股份有限公司 | 一种电池背钝化结构及其制作方法、太阳能电池 |
| CN114551606B (zh) | 2021-09-16 | 2024-10-15 | 晶科能源股份有限公司 | 一种太阳能电池、光伏组件 |
| CN114335249A (zh) * | 2021-12-31 | 2022-04-12 | 东方日升新能源股份有限公司 | N-TOPCon电池及其制作工艺 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5467778A (en) * | 1977-11-10 | 1979-05-31 | Toshiba Corp | Production of semiconductor device |
| JPS59205758A (ja) * | 1983-05-09 | 1984-11-21 | Sanyo Electric Co Ltd | トランジスタの製造方法 |
| JPS63136568A (ja) * | 1986-11-27 | 1988-06-08 | Fujitsu Ltd | 半導体装置 |
| JPH01304737A (ja) * | 1988-06-01 | 1989-12-08 | Sony Corp | Ｐｎｐバイポーラトランジスタの製造方法 |
| JPH05218400A (ja) * | 1992-01-31 | 1993-08-27 | Toyo Electric Mfg Co Ltd | 半導体素子 |
| JP3557158B2 (ja) * | 2000-07-27 | 2004-08-25 | 三洋電機株式会社 | 高耐圧半導体装置の製造方法 |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| DE102006041424A1 (de) * | 2006-09-04 | 2008-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung |
| CN100536177C (zh) * | 2008-01-29 | 2009-09-02 | 江阴浚鑫科技有限公司 | 晶体硅太阳能电池的热处理方法 |
-
2009
- 2009-10-13 KR KR1020117011733A patent/KR20110086833A/ko not_active Ceased
- 2009-10-13 WO PCT/EP2009/063370 patent/WO2010046284A1/en active Application Filing
- 2009-10-13 JP JP2011532591A patent/JP2012506629A/ja not_active Ceased
- 2009-10-13 CN CN2009801422559A patent/CN102197497A/zh active Pending
- 2009-10-22 TW TW098135821A patent/TW201030854A/zh unknown
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