WO2010046284A1 - Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation - Google Patents
Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation Download PDFInfo
- Publication number
- WO2010046284A1 WO2010046284A1 PCT/EP2009/063370 EP2009063370W WO2010046284A1 WO 2010046284 A1 WO2010046284 A1 WO 2010046284A1 EP 2009063370 W EP2009063370 W EP 2009063370W WO 2010046284 A1 WO2010046284 A1 WO 2010046284A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor
- layer
- substrate
- silicon
- semiconductor substrate
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 141
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 38
- 238000009434 installation Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 97
- 238000000137 annealing Methods 0.000 claims abstract description 52
- 150000001875 compounds Chemical class 0.000 claims abstract description 33
- 239000012535 impurity Substances 0.000 claims abstract description 31
- 239000000654 additive Substances 0.000 claims abstract description 23
- 230000000996 additive effect Effects 0.000 claims abstract description 23
- 238000005247 gettering Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 100
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 45
- 229910052698 phosphorus Inorganic materials 0.000 claims description 45
- 239000011574 phosphorus Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 36
- 150000003377 silicon compounds Chemical class 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 239000002344 surface layer Substances 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 54
- 238000002161 passivation Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000008021 deposition Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910004012 SiCx Inorganic materials 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000006117 anti-reflective coating Substances 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000005368 silicate glass Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000002779 inactivation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- -1 phosphorus Chemical class 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the semiconductor substrate includes a front side and a back side and the semiconductor compound layer is formed on the front side.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011532591A JP2012506629A (ja) | 2008-10-23 | 2009-10-13 | 半導体デバイス製造方法、半導体デバイス、及び半導体デバイス製造設備 |
| CN2009801422559A CN102197497A (zh) | 2008-10-23 | 2009-10-13 | 半导体组件制造方法、半导体组件及半导体组件制造设备 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/257,233 | 2008-10-23 | ||
| EP08167461A EP2180531A1 (en) | 2008-10-23 | 2008-10-23 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
| EP08167461.6 | 2008-10-23 | ||
| US12/257,233 US8124502B2 (en) | 2008-10-23 | 2008-10-23 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2010046284A1 true WO2010046284A1 (en) | 2010-04-29 |
Family
ID=41809150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2009/063370 WO2010046284A1 (en) | 2008-10-23 | 2009-10-13 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2012506629A (enrdf_load_stackoverflow) |
| KR (1) | KR20110086833A (enrdf_load_stackoverflow) |
| CN (1) | CN102197497A (enrdf_load_stackoverflow) |
| TW (1) | TW201030854A (enrdf_load_stackoverflow) |
| WO (1) | WO2010046284A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018003036A1 (ja) * | 2016-06-29 | 2018-01-04 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池製造装置 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI126401B (fi) * | 2011-09-30 | 2016-11-15 | Aalto-Korkeakoulusäätiö | Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin |
| JP2015519729A (ja) * | 2012-04-02 | 2015-07-09 | ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． | 光電変換素子及びその製造方法 |
| CN104425633B (zh) * | 2013-08-30 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 一种介质钝化膜和太阳能电池及其制备方法 |
| JP6072129B2 (ja) * | 2014-04-30 | 2017-02-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ドーパント含有ポリマー膜を用いた基体のドーピング |
| CN107735866B (zh) * | 2015-05-29 | 2021-05-14 | 松下知识产权经营株式会社 | 太阳能电池 |
| JP2020113580A (ja) * | 2019-01-08 | 2020-07-27 | 株式会社ディスコ | ゲッタリング層形成方法 |
| CN110707160B (zh) * | 2019-10-11 | 2021-07-16 | 湖南红太阳光电科技有限公司 | 一种管式直接PECVD制备太阳电池SiC减反射膜的方法 |
| CN113782638B (zh) * | 2021-09-09 | 2024-10-22 | 正泰新能科技股份有限公司 | 一种电池背钝化结构及其制作方法、太阳能电池 |
| CN114551606B (zh) | 2021-09-16 | 2024-10-15 | 晶科能源股份有限公司 | 一种太阳能电池、光伏组件 |
| CN114335249A (zh) * | 2021-12-31 | 2022-04-12 | 东方日升新能源股份有限公司 | N-TOPCon电池及其制作工艺 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008028625A2 (de) * | 2006-09-04 | 2008-03-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5467778A (en) * | 1977-11-10 | 1979-05-31 | Toshiba Corp | Production of semiconductor device |
| JPS59205758A (ja) * | 1983-05-09 | 1984-11-21 | Sanyo Electric Co Ltd | トランジスタの製造方法 |
| JPS63136568A (ja) * | 1986-11-27 | 1988-06-08 | Fujitsu Ltd | 半導体装置 |
| JPH01304737A (ja) * | 1988-06-01 | 1989-12-08 | Sony Corp | Ｐｎｐバイポーラトランジスタの製造方法 |
| JPH05218400A (ja) * | 1992-01-31 | 1993-08-27 | Toyo Electric Mfg Co Ltd | 半導体素子 |
| JP3557158B2 (ja) * | 2000-07-27 | 2004-08-25 | 三洋電機株式会社 | 高耐圧半導体装置の製造方法 |
| US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
| CN100536177C (zh) * | 2008-01-29 | 2009-09-02 | 江阴浚鑫科技有限公司 | 晶体硅太阳能电池的热处理方法 |
-
2009
- 2009-10-13 KR KR1020117011733A patent/KR20110086833A/ko not_active Ceased
- 2009-10-13 WO PCT/EP2009/063370 patent/WO2010046284A1/en active Application Filing
- 2009-10-13 JP JP2011532591A patent/JP2012506629A/ja not_active Ceased
- 2009-10-13 CN CN2009801422559A patent/CN102197497A/zh active Pending
- 2009-10-22 TW TW098135821A patent/TW201030854A/zh unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008028625A2 (de) * | 2006-09-04 | 2008-03-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen dotierung und oxidation von halbleitersubstraten und dessen verwendung |
Non-Patent Citations (2)
| Title |
|---|
| BENTZEN A ET AL: "Gettering of transition metal impurities during phosphorus emitter diffusion in multicrystalline silicon solar cell processing", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 99, no. 9, 15 May 2006 (2006-05-15), pages 93509 - 093509, XP012084987, ISSN: 0021-8979 * |
| LAUTENSCHLAGER H ET AL: "MC-silicon solar cells with <17% efficiency", CONFERENCE RECORD OF THE 26TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 19970929; 19970929 - 19971003 NEW YORK, NY : IEEE, US, 29 September 1997 (1997-09-29), pages 7 - 12, XP010267716, ISBN: 978-0-7803-3767-1 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018003036A1 (ja) * | 2016-06-29 | 2018-01-04 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2012506629A (ja) | 2012-03-15 |
| CN102197497A (zh) | 2011-09-21 |
| KR20110086833A (ko) | 2011-08-01 |
| TW201030854A (en) | 2010-08-16 |
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